ON Semiconductor NPN MJD44H11 * Complementary Power Transistors PNP MJD45H11 * DPAK For Surface Mount Applications *ON Semiconductor Preferred Device . . . for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS * Lead Formed for Surface Mount Application in Plastic Sleeves * * * * * * (No Suffix) Straight Lead Version in Plastic Sleeves ("-1" Suffix) Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix) Electrically Similar to Popular D44H/D45H Series Low Collector Emitter Saturation Voltage -- VCE(sat) = 1.0 Volt Max @ 8.0 Amperes Fast Switching Speeds Complementary Pairs Simplifies Designs CASE 369A-13 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III MAXIMUM RATINGS D44H11 or D45H11 Unit VCEO 80 Vdc VEB 5 Vdc Collector Current -- Continuous Peak IC 8 16 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 20 0.16 Watts W/C Total Power Dissipation (1) @ TA = 25C Derate above 25C PD 1.75 0.014 Watts W/C TJ, Tstg -55 to 150 C Symbol Max Unit Thermal Resistance, Junction to Case RJC 6.25 C/W Thermal Resistance, Junction to Ambient (1) RJA 71.4 C/W TL 260 C Emitter-Base Voltage Operating and Storage Junction Temperature Range CASE 369-07 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 0.165 4.191 Symbol 0.190 4.826 Rating Collector-Emitter Voltage Lead Temperature for Soldering 0.118 3.0 Characteristic 0.100 2.54 THERMAL CHARACTERISTICS 0.243 6.172 0.063 1.6 (1) These ratings are applicable when surface mounted on the minimum pad size recommended. inches mm Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 November, 2001 - Rev. 5 1 Publication Order Number: MJD44H11/D MJD44H11 MJD45H11 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 80 -- -- Vdc Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES -- -- 10 A Emitter Cutoff Current (VEB = 5 Vdc) IEBO -- -- 50 A Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) VCE(sat) -- -- 1 Vdc Base-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) VBE(sat) -- -- 1.5 Vdc hFE 60 -- -- -- 40 -- -- -- -- 130 230 -- -- -- -- 50 40 -- -- -- -- 300 135 -- -- -- -- 500 500 -- -- -- -- 140 100 -- -- OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 30 mA, IB = 0) ON CHARACTERISTICS DC Current Gain (VCE = 1 Vdc, IC = 2 Adc) DC Current Gain (VCE = 1 Vdc, IC = 4 Adc) DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz) Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) Ccb MJD44H11 MJD45H11 pF fT MJD44H11 MJD45H11 MHz SWITCHING TIMES Delay and Rise Times (IC = 5 Adc, IB1 = 0.5 Adc) Storage Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) Fall Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) td + tr MJD44H11 MJD45H11 ns ts MJD44H11 MJD45H11 ns tf MJD44H11 MJD45H11 http://onsemi.com 2 ns r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJD44H11 MJD45H11 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 RJC(t) = r(t) RJC RJC = 6.25C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 0.1 0.1 0.07 0.05 0.05 0.02 0.01 0.03 0.02 P(pk) t1 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 20 30 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1k Figure 1. Thermal Response IC, COLLECTOR CURRENT (AMP) 20 10 500s 5 3 2 dc There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100s 1ms 5ms 1 THERMAL LIMIT @ TC = 25C WIRE BOND LIMIT 0.5 0.3 0.1 0.05 1 5 7 10 20 30 50 3 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 2. Maximum Forward Bias Safe Operating Area TA TC 2.5 25 PD, POWER DISSIPATION (WATTS) 0.02 2 20 TC 1.5 15 TA SURFACE MOUNT 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (C) Figure 3. Power Derating http://onsemi.com 3 125 150 MJD44H11 MJD45H11 1000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 1000 VCE = 4 V 100 VCE = 1 V TJ = 25C 10 0.1 1 1 10 IC, COLLECTOR CURRENT (AMPS) Figure 4. MJD44H11 DC Current Gain Figure 5. MJD45H11 DC Current Gain 1000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 25C IC, COLLECTOR CURRENT (AMPS) TJ = 125C 25C 100 -40C VCE = 1 V 0.1 1 VCE = 1 V 0.1 1 10 Figure 6. MJD44H11 Current Gain versus Temperature Figure 7. MJD45H11 Current Gain versus Temperature 1.2 SATURATION VOLTAGE (VOLTS) VBE(sat) 0.6 0 0.1 100 IC, COLLECTOR CURRENT (AMPS) 0.8 0.2 25C -40C IC, COLLECTOR CURRENT (AMPS) 1 0.4 TJ = 125C 10 10 1.2 SATURATION VOLTAGE (VOLTS) 1V 10 0.1 10 1000 10 VCE = 4 V 100 IC/IB = 10 TJ = 25C VCE(sat) 1 IC, COLLECTOR CURRENT (AMPS) 1 0.8 0.6 0.4 0.2 0 0.1 10 VBE(sat) Figure 8. MJD44H11 On-Voltages IC/IB = 10 TJ = 25C VCE(sat) 1 IC, COLLECTOR CURRENT (AMPS) Figure 9. MJD45H11 On-Voltages http://onsemi.com 4 10 MJD44H11 MJD45H11 PACKAGE DIMENSIONS DPAK CASE 369A-13 ISSUE AA -T- C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 3 U K F J L H D G 2 PL 0.13 (0.005) M T http://onsemi.com 5 DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --0.030 0.050 0.138 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --0.77 1.27 3.51 --- MJD44H11 MJD45H11 PACKAGE DIMENSIONS DPAK CASE 369-07 ISSUE M C B V E R 4 A 1 2 3 S -T- SEATING PLANE K J F H D G 3 PL 0.13 (0.005) M T http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 MJD44H11 MJD45H11 Notes http://onsemi.com 7 MJD44H11 MJD45H11 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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