1Ch High Side Switch ICs
2.4A Current Lim it High Side Switch ICs
BD82061FVJ BD82065FVJ
General Description
BD82061FVJ and BD82065FVJ are low ON-Resistance
high-side power switches using N-Channel MOSFETs
for Universal Serial Bus (USB) applications. These ICs
have built-in over-current protection, thermal shutdown,
under-voltage lockout and soft-start functions.
Features
Built-in Low ON-Resistance (Typ 70mΩ)
N-Channel MOSFET
Current Limit Threshold 2.4A
Control Input Logic
Active “Low” Control Logic: BD82061FVJ
Active “High” Control Logic: BD82065FVJ
Soft-Start Circuit
Over-Current Protection
Thermal Shutdown
Under-Voltage Lockout Protection
Open-Drain Fault Flag Output
Reverse Current Protection when Power Switch Off
TTL Enable Input
Applications
PC, PC Peripheral Equipment, USB Hub in Consumer
Appliances and so forth
Key Specifications
Input Voltage Range: 2.7V to 5.5V
ON-Resistance: 70mΩ(Typ)
Over-Current Threshold: 1.5A (Min), 3.0A (Max)
Number of Channels: 1ch
Output Rise Time: 0.8ms(Typ)
Standby Current: 0.01μA (Typ)
Operating Temperature Range: -40°C to +85°C
Package W(Typ) D(Typ) H (Max)
Typical Application Circuit
Lineup
Current Limit Threshold
Control Input
Logic Package Orderable Part Number
Min Typ Max
1.5A 2.4A 3.0A Low TSSOP-B8J Reel of 2500 BD82061FVJ-E2
1.5A 2.4A 3.0A High TSSOP-B8J Reel of 2500 BD82065FVJ-E2
TSSOP-B8J
3.00mm x 4.90mm x 1.10mm
OUT
OUT
OUT
IN
IN
/OC
GND
5V(typ.)
CL
CI N
-
+
EN(/EN)
3.3V
10kΩ~
100kΩ
VOUT
10kΩ to
100kΩ
5V(Typ)
○Product structure：Silicon monolithic integrated circuit ○This product has not designed protection against radioactive rays
1/23 21.A ug.2014 Rev.002
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Datashee
t
BD82061FVJ BD82065FVJ
Block Diagram
UVLO
IN
GND
Charge
Pump
Gate
Logic
OCD
TSD
IN
EN
/EN
OUT
OUT
OUT
/OC
Pin Configu rations
1
2
3
4
8
7
6
5
OUT
OUT
OUT
/OC
GND
IN
IN
/EN
1
2
3
4
8
7
6
5
OUT
OUT
OUT
/OC
GND
IN
IN
EN
Pin Description
Pin No. Symbol I / O Function
1 GND - Ground
2, 3 IN - Switch input and the supply voltage for the IC.
At use, connect both pins together.
4 EN , /EN I
Enable input.
/EN: Low level input turns on the switch.(BD82061FVJ)
EN: High level input turns on the switch.(BD82065FVJ)
High level input > 2.0V, low level input < 0.8V.
5 /OC O
Over-current detection terminal.
Low level output during over-current or over-temperature condition.
Open-drain fault flag output.
6, 7, 8 OUT O Power switch output.
At use, connect each pin together.
BD82061FVJ
(TOP VIEW)
BD82065FVJ
(TOP VIEW)
2/23 21.A ug.2014 Rev.002
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Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Rating Unit
Supply Voltage VIN -0.3 to +6.0 V
Enable Input Voltage
V
EN
,
V/EN
-0.3 to +6.0 V
/OC Voltage V/OC -0.3 to +6.0 V
/OC Sink Current I/OC 5 mA
OUT Voltage VOUT -0.3 to +6.0 V
Storage Temperature Tstg -55 to +150 °C
Power Dissipation Pd 0.58
(Note 1)
W
(Note 1) Mounted on 70mm x 70mm x 1.6mm glass-epoxy PCB. Derate by 4.7mW/°C above Ta=25°C.
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated
over the absolute maximum ratings.
Recommended Operating Conditions
Parameter Symbol Rating Unit
Min Typ Max
Operating Voltage VIN 2.7 - 5.5 V
Operating Temperature Topr -40 - +85 °C
Electrical Characteristics
BD82061FVJ (VIN = 5.0V, Ta = 25°C,unless otherwise specified)
Parameter Symbol Limit Unit Conditions
Min Typ Max
Operating Current IDD - 110 160 μA V/EN = 0V , OUT=OPEN
Standby Current ISTB - 0.01 1 μA V/EN = 5V , OUT=OPEN
/EN Input Voltage V/ENH 2.0 - - V High Input
V/ENL - - 0.8 V Low Input
/EN Input Current I/EN -1.0 +0.01 +1.0 μA V/EN = 0V or V/EN = 5V
/OC Output Low Voltage V/OCL - - 0.5 V I/OC = 0.5mA
/OC Output Leak Current IL/OC - 0.01 1 μA V/OC = 5V
/OC Delay Time t/OC 10 15 20 ms
ON-Resistance RON - 70 110 mΩ IOUT = 500mA
Switch Leak Current ILSW - - 1.0 μA V/EN = 5 V, V OUT = 0V
Reverse Leak Current ILREV - - 1.0 μA VOUT = 5.5V, V IN = 0V
Current Limit Threshold ITH 1.5 2.4 3.0 A
Short Circuit Current ISC 1.1 1.5 2.1 A
V
OUT
= 0V
CL = 47μF (RMS)
Output Rise Time tON1 - 0.8 10 ms RL = 10Ω
Output Turn ON Time tON2 - 1.1 20 ms RL = 10Ω
Output Fall Time tOFF1 - 5 20 μs RL = 10Ω
Output Turn OFF Time tOFF2 - 10 40 μs RL = 10Ω
UVLO Threshold VTUVH 2.1 2.3 2.5 V Increasing VIN
VTUVL 2.0 2.2 2.4 V Decreasing VIN
3/23 21.A ug.2014 Rev.002
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Electrical Characteristics – continued
BD82065FVJ (VIN = 5.0V, Ta = 25°C,unless otherwise specified)
Parameter Symbol Limits Unit Conditions
Min. T p. Max.
Operating Current IDD - 110 160 μA VEN = 5V , OUT=OPEN
Standby Current ISTB - 0.01 1 μA VEN = 0V , OUT=OPEN
EN Input Voltage VENH 2.0 - - V High input
VENL - - 0.8 V Low input
EN Input Current IEN -1.0 +0.01 +1.0 μA VEN = 0V or V/EN = 5V
/OC Output Low Voltage V/OCL - - 0.5 V I/OC = 0.5mA
/OC Output Leak Current IL/OC - 0.01 1 μA V/OC = 5V
/OC Delay Time t/OC 10 15 20 ms
ON-Resistance RON - 70 110 mΩ IOUT = 500mA
Switch Leak Current ILSW - - 1.0 μA VEN = 0V, V OUT = 0V
Reverse Leak Current ILREV - - 1.0 μA VOUT = 5.5V, VIN = 0V
Current Limit Threshold ITH 1.5 2.4 3.0 A
Short Circuit Current ISC 1.1 1.5 2.1 A
V
OUT
= 0V
CL = 47μF (RMS)
Output Rise Time tON1 - 0.8 10 ms RL = 10Ω
Output Turn ON Time tON2 - 1.1 20 ms RL = 10Ω
Output Fall Time tOFF1 - 5 20 μs RL = 10Ω
Output Turn OFF Time tOFF2 - 10 40 μs RL = 10Ω
UVLO Threshold VTUVH 2.1 2.3 2.5 V Increasing VIN
VTUVL 2.0 2.2 2.4 V Decreasing VIN
4/23 21.A ug.2014 Rev.002
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Measurement Circuit
GND
IN
IN
EN(/EN)
OUT
OUT
OUT
/OC
VEN(V/EN)
1µF
VIN
A
GND
IN
IN
EN(/EN)
OUT
OUT
OUT
/OC
VEN(V/EN)
1µF
RL
CL
VIN
10kΩ
VIN
A
A. Operating Current B. EN, /EN Input Voltage, Output Rise / Fall Time
GND
IN
IN
EN(/EN)
OUT
OUT
OUT
/OC
VEN(V/EN)
1µF
10kΩ
CL
VIN
VIN
IOUT
A
GND
IN
IN
EN(/EN)
OUT
OUT
OUT
/OC
VEN(V/EN)
1µF
VIN
VIN
I/OC
C. ON-Resistance
Over-Current Detection D. /OC Output Low Voltage
Figure 1. Measurement Circuit
Timing Diagram
tON1
VOUT
10%
90%
90%
tOFF1
tON2
V/EN
V/ENL
tOFF2
V/ENH
tON1
VOUT
10%
90%
90%
tOFF1
tON2
VEN
VENH
tOFF2
VENL
Figure 2. Timing Diagram (BD82061FVJ)
Figure 3. Timing Diagram (BD82065FVJ)
5/23 21.A ug.2014 Rev.002
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Typical Performance Curves
Figure 4. Operating Current vs Supply Voltage
(EN, /EN Enable)
0
20
40
60
80
100
120
140
23456
Supply Voltage : VIN[V]
Operating Current : I DD [μA]
Ta=25°C
Figure 6. Standby Current vs Supply Voltage
(EN, /EN Disable)
Figure 5. Operating Current
vs Ambient Temperature
(EN, /EN Enable)
0
20
40
60
80
100
120
140
-50 0 50 100
Ambient Temperature : Ta[℃]
Operating Current : I
DD
[μA]
VIN=5.0V
0.0
0.2
0.4
0.6
0.8
1.0
23456
Supply Voltage : V
IN
[V]
Standby Current : I
STB
[μA]
Ta=25°C
Figure 7. Standby Current vs Ambient Temperature
(EN, /EN Disable)
0.0
0.2
0.4
0.6
0.8
1.0
-50 0 50 100
Ambient Temperature : Ta[℃]
Standby Current : I
STB
[μA]
VIN=5.0V
6/23 21.A ug.2014 Rev.002
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Typical Performance Curves - continued
Figure 10. ON-Resistance vs
Supply Voltage
0
50
100
150
200
23456
Supply Voltage : V
IN
[V]
ON Resistance : R
ON
[mΩ]
Ta=25°C
Figure 11. ON-Resistance vs
Ambient Temperature
0
50
100
150
200
-50 0 50 100
Ambient Temperature : Ta[℃]
ON Resistance : R
ON
[mΩ]
VIN=5.0V
Figure 8. EN, /EN Input Voltage
vs
Supply Voltage
0.0
0.5
1.0
1.5
2.0
23456
Supply Voltage : VIN[V]
Enable Input Voltage : V EN, V/EN [V]
Low to High
High to Low
Ta=25°C
Figure 9. EN, /EN Input Voltage
vs
Ambient Temperature
0.0
0.5
1.0
1.5
2.0
-50 0 50 100
Ambient Temperature : Ta[℃]
Enable Input Voltage : V
EN
, V
/EN
[V]
VIN=5.0V
High to Low
Low to High
7/23 21.A ug.2014 Rev.002
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Typical Performance Curves - continued
Figure 12. Current Limit Threshold vs
Supply Voltage
1.4
1.6
1.8
2.0
2.2
2.4
23456
Supply Voltage : V
IN
[V]
Current Limit Threshold : I
TH
[A]
Ta=25°C
Figure 14. Short Circuit Current vs
Supply Voltage
1.0
1.2
1.4
1.6
1.8
2.0
23456
Supply Voltage : V
IN
[V]
Short-Circuit Current : I
SC
[A]
Ta=25°C
Figure 13. Current Limit Threshold vs
Ambient Temperature
1.4
1.6
1.8
2.0
2.2
2.4
-50 0 50 100
Ambient Temperature : Ta[℃]
Current Limit Threshold : I
TH
[A]
VIN=5.0V
Figure 15. Short Circuit Current vs
Ambient Temperature
1.0
1.2
1.4
1.6
1.8
2.0
-50 0 50 100
Ambient Temperature : Ta[℃]
Short-Circuit Current : I
SC
[A]
VIN=5.0V
8/23 21.A ug.2014 Rev.002
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Typical Performance Curves - continued
Figure 16. /OC Output Low Voltage vs
Supply Voltage
0
20
40
60
80
100
23456
Supply Voltage : VIN[V]
/OC Output Low Voltage : V /OC[mV]
Ta=25°C
Figure 19. UVLO Hysteresis Voltage vs
Ambient Temperature
Figure 17. /OC Output Low Voltage vs
Ambient Temperature
0
20
40
60
80
100
-50 0 50 100
Ambient Temperature : Ta[℃]
/OC Output Low Voltage :V
/OC
[mV]
VIN=5.0V
0.0
0.2
0.4
0.6
0.8
1.0
-50 0 50 100
Ambient Temperature : Ta[℃]
UVLO Hysteresis Voltage : V HYS [V]
Figure 18. UVLO Threshold Voltage vs
Ambient Temperature
2.0
2.1
2.2
2.3
2.4
2.5
-50 0 50 100
Ambient Temperature : Ta[℃]
UVLO Threshold : V
TUVH
, V
TUVL
[V]
V
TUVH
V
TUVL
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Typical Performance Curves - continued
Figure 20. Output Rise Time vs
Supply Voltage
0.0
1.0
2.0
3.0
4.0
5.0
23456
Supply Voltage : VIN[V]
Output Rise Time : t ON1 [ms]
Ta=25°C
Figure 21. Output Rise Time vs
Ambient Temperature
0.0
1.0
2.0
3.0
4.0
5.0
-50 0 50 100
Ambient Temperature : Ta[℃]
Output Rise Time : t
ON1
[ms]
VIN=5.0V
Figure 22. Output Turn ON Time vs
Supply Voltage
0.0
1.0
2.0
3.0
4.0
5.0
23456
Supply Voltage : V
IN
[V]
Output Turn ON Time : t
ON2
[ms]
Ta=25°C
Figure 23. Output Turn ON Time vs
Ambient Temperature
0.0
1.0
2.0
3.0
4.0
5.0
-50 0 50 100
Ambient Temperature : Ta[℃]
Output Turn ON Time : t ON2[ms]
V
IN
=5.0V
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Typical Performance Curves - continued
0
2
4
6
8
10
-50 0 50 100
Ambient Temperature : Ta[℃]
Output Turn OFF Time : t
OFF2
[μs]
0
2
4
6
8
10
23456
Supply Voltage : V
IN
[V]
Output Turn OFF Time : t
OFF2
[μs]
0.0
1.0
2.0
3.0
4.0
5.0
-50 0 50 100
Ambient Temperature : Ta[℃]
Output Fall Time : t
OFF1
[μs]
VIN=5.0V
Figure 25. Output Fall TIme vs
Ambient Temperature
Figure 24. Output Fall Time vs
Supply Voltage
0.0
1.0
2.0
3.0
4.0
5.0
23456
Supply Voltage: VIN[V]
Output Fall Time : t OFF1[μs]
Ta=25°C
Ta=25°C
Figure 26. Output Turn OFF Time vs
Supply Voltage
VIN=5.0V
Figure 27. Output Turn OFF Time vs
Ambient Temperature
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Typical Performance Curves - continued
Figure 29. /OC Delay Time vs
Ambient Temperature
Figure 28. /OC Delay Time vs
Supply Voltage
10
12
14
16
18
20
23456
Supply Voltage : VIN[V]
/OC Delay Time : t /OC [ms]
Ta=25°C
10
12
14
16
18
20
-50 0 50 100
Ambient Temperature : Ta[℃]
/OC Delay Time : t /OC [ms]
VIN=5.0V
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Typical Wave Forms
(BD82065FVJ)
TIME (1ms/div.)
Figure 30. Output Rise Characteristic
TIME (1ms/div.)
Figure 31. Output Fall Characteristic
TIME (10ms/div.)
Figure 33. Over-Current
Response Ramped Load
TIME (1ms/div.)
Figure 32. Inrush Current Response
V
OUT
(5V/div.)
V
/OC
(5V/div.)
I
OUT
(1.0A/div.)
V
IN
=5V
CL=100μF
V
EN
(5V/div.)
V
IN
=5V
R
L=5Ω
C
L=100μF
V
/OC
(5V/div.)
V
OUT
(5V/div.)
I
IN
(1.0A/div.)
V
EN
(5V/div.)
V
IN
=5V
R
L=5Ω
CL=100μF
V
/OC
(5V/div.)
V
OUT
(5V/div.)
I
IN
(1.0A/div.)
CL=47µF
CL=100µF
CL=200µF
V
EN
(5V/div.)
V
IN
=5V
RL=5Ω
V
/OC
(5V/div.)
I
IN
(1.0A/div.)
13/23 21.Aug.2014 Rev.002
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V
IN
=5V
C
L=100μF
V
/OC
(5V/div.)
V
OUT
(5V/div.)
I
OUT
(1.0
A/div.)
Thermal Shutdown
TIME(200ms/div.)
Figure 37. Thermal Shutdown
1ΩLoad Connected at Enable
V
EN
(5V/div.)
V
IN
=5V
C
L=100μF
V
/OC
(5V/div.)
V
OUT
(5V/div.)
I
OUT
(1.0A/div.)
TIME(5ms/div.)
Figure 35. Over-Current Response
Enable to Short-Circuit
V
IN
=5V
C
L=100μF
TIME(2ms/div.)
Figure 34.
Over-Current Response
Ramped Load
I
OUT
(1.0A/div.)
V
OUT
(5V/div.)
V
/OC
(5V/div.)
V
/OC
(5V/div.)
V
OUT
(5V/div.)
I
OUT
(1.0A/div.)
V
IN
=5V
C
L=100μF
TIME(5ms/div.)
Figure 36. Over-Current Response
1ΩLoad Connected at Enable
Typical Wave Forms - continued
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Typical Wave Forms - continued
V
IN
(5V/div.)
R
L
=5Ω
C
L=100μF
V
OUT
(5V/div.)
V
/OC
(5V/div.)
I
OUT
(1.0A/div.)
TIME(10ms/div.)
Figure 38. UVLO Response when
Increasing VIN
V
IN
(5V/div.)
R
L
=5Ω
C
L=100μF
V
OUT
(5V/div.)
V
/OC
(5V/div.)
I
OUT
(1.0A/div.)
TIME(10ms/div.)
Figure 39. UVLO Response when
Decreasing VIN
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Typical Application Circuit
IN
OUT
Regulator
OUT
OUT
OUT
IN
IN
/OC
GND
VBUS
D-
D+
GND
USB
Controller
5V(Typ)
10k to
100kΩ
C
L
C
IN
-
+
EN(/EN)
Application I n fo rmation
When excessive current flows due to output short circuit or so, ringing occurs by inductance of power source line and IC.
This may cause bad effects on IC operations. In order to avoid this case, a bypass capacitor (CIN) should be connected
across the IN terminal and GND terminal of IC. A 1μF capacitor or higher value is recommended. Moreover, in order to
decrease voltage fluctuations of power source line and IC, connect a low ESR capacitor in parallel with CIN. A 10μF to
100μF capacitor or higher value is effective.
Pull up /OC output by resistance 10kΩ to 100kΩ.
Set up values for CL which satisfies the application.
This application circuit does not guarantee its operation. When using the circuit with changes to the external circuit
constants, make sure to leave an adequate margin for external components including AC/DC characteristics as well as
dispersion of the IC.
Functional Description
1. Switch Operation
IN terminal and OUT terminal are connected to the drain and the source of MOSFET switch respectively. The IN
terminal is also used as power source input to internal control circuit. When the switch is turned ON from EN(/EN)
control input, IN terminal and OUT terminal are connected by a bidirectional 70mΩ(Typ) switch. Therefore, current
flows from OUT terminal to IN terminal since current flows from higher to lower potentials.
On the other hand, when the switch is turned OFF, it is possible to prevent current from flowing reversely from OUT to
IN since a parasitic diode between the drain and the source of switch MOSFET is not present.
On the other hand, when the switch is turned off, it is possible to prevent current from flowing reversely from OUT to IN
since a parasitic diode between the drain and the source of switch MOSFET is not present.
2. Thermal Shutdown Circuit (TSD)
If over-current would continue, the temperature of the IC would increase drastically. If the junction temperature were
beyond 170°C (Typ) during the condition of over-current detection, the thermal shutdown circuit operates and turns the
power switch OFF causing the IC to output a fault flag (/OC). Then, when the junction temperature decreases lower
than 150°C (Typ), the power switch is turned ON and the fault flag (/OC) is cancelled. This operation repeats, unless
the cause of the increase of chip’s temperature is removed or the output of power switch is turned OFF.
The thermal shutdown circuit operates when the switch is on (EN(/EN) signal is active).
3. Over-Current Detection (OCD)
The over-current detection circuit limits current (ISC ) and outputs fault flag (/OC) when current flowing in each MOSFET
switch exceeds a specified value.. The over-current detection circuit works when the switch is on (EN(/EN) signal is
active).
There are three types of response against over-current:
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(1) When the switch is turned ON while the output is in short circuit status, the switch goes into current limit status
immediately.
(2) When the output short circuits or high-current load is connected while the switch is ON, very large current flows
until the over-current limit circuit reacts. When the current detection and limit circuit operates, current limitation is
carried out.
(3) When the output current increases gradually, current limitation would not operate unless the output current
exceeds the over-current detection value. When it exceeds the detection value, current limitation is carried out.
4. Under-Voltage Lockout (UVLO)
UVLO circuit prevents the switch from turning ON until the VIN exceeds 2.3V (Typ). If the VIN drops below 2.2V (Typ)
while the switch turns on, then UVLO shuts off the power switch. UVLO has hysteresis of 100mV (Typ).
Under-voltage lockout circuit operates when the switch is on (EN(/EN) signal is active).
5. Fault Flag (/OC) Output
Fault flag output is N-MOS open drain output. During detection of over-current and/or thermal shutdown, the output
level will turn low.
Over-current detection has delay filter. This delay filter prevents current detection from being sent during instantaneous
events such as inrush current at switch ON or during hot plug. If fault flag output is unused, /OC pin should be
connected to open or ground line.
V
/EN
V
OUT
I
OUT
V
/OC
Output Short Circuit
Thermal Shutdown
/OC Delay Time
Figure 40. Over-Current Detection, Thermal Shutdown Timing
(BD82061FVJ)
V
EN
V
OUT
I
OUT
V
/OC
Output Short Circuit
Thermal Shutdown
/OC Delay Time
Figure 41. Over-Current Detection, Thermal Shutdown Timing
(BD82065FVJ)
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Power Dissipation
(TSSOP-B8J Package)
0
100
200
300
400
500
600
025 50 75 100 125 150
AMBIENT TEMPERATURE: Ta [℃]
POWER DISSIPATION: Pd[mW]
* 70mm x 70mm x 1.6mm Glass Epoxy Board
Figure 42. Power Dissipation Curve (Pd-Ta Curve)
I/O Equivalence Circuit
Symbol
Pin No.
Equivalence Circuit
EN(/EN) 4
/OC 5
OUT 6,7,8
Ambient Temperature: Ta [°C]
Power Dissipation: Pd [mW]
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Operation al Notes
1. Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
2. Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3. Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4. Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5. Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in
deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when
the IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum
rating, increase the board size and copper area to prevent exceeding the Pd rating.
6. Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately
obtained. The electrical characteristics are guaranteed under the conditions of each parameter.
7. In rush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush
current may flow instantaneously due to the internal powering sequence and delays, especially if the IC
has more than one power supply. Therefore, give special consideration to power coupling capacitance,
power wiring, width of ground wiring, and routing of connections.
8. Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9. Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
10. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment)
and unintentional solder bridge deposited in between pins during assembly to name a few.
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Operation al Notes - continued
11. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the
power supply or ground line.
12. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.
Figure 43. Example of monolithic IC structure
13. Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
14. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below
the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
15. Thermal d esig n
Perform thermal design in which there are adequate margins by taking into account the power dissipation (Pd) in
actual states of use.
N N
P+P
N N
P+
P Substrate
GND
NP+
N N
P+
NP
P Substrate
GND GND
Parasitic
Elements
Pin A
Pin A
Pin B Pin B
B C
E
Parasitic
Elements
GND
Parasitic
Elements
CB
E
Transistor (NPN)
Resistor
N Region
close-by
Parasitic
Elements
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Orderi n g Information
B D 8 2 0 6 1 F V J - E 2
Part Number
Package
FVJ : TSSOP-B8J
Packaging and forming specification
E2: Embossed tape and reel
B D 8 2 0 6 5 F V J - E 2
Part Number Package
FVJ : TSSOP-B8J
Packaging and forming specification
E2: Embossed tape and reel
Marking Diagram
Part Number Part Number Marking
BD82061FVJ D82061
BD82065FVJ D82065
TSSOP-B8J (TOP VIEW)
Part Number Marking
LOT Number
1PIN MARK
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Datasheet
Datasheet
Notice – GE Rev.002
© 2013 ROHM Co., Ltd. All rights reserved.
Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN USA EU CHINA
CLASSⅢ CLASSⅢ CLASSⅡb CLASSⅢ
CLASSⅣ CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Datasheet
Datasheet
Notice – GE Rev.002
© 2013 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportati on
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
DatasheetDatasheet
Notice – WE Rev.001
© 2014 ROHM Co., Ltd. All rights reserved.
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or
concerning such information.
