140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2619 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLACATIONS Features * * * * * * 2.9 - 3.1 GHz 42 VOLTS INPUT/OUTPUT MATCHING POUT = 105 WATTS GP = 6.2 dB GAIN MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: The MS2619 is a high power silicon bipolar NPN transistor specifically designed for pulsed S-Band radar output and driver applications. The MS2619 is capable of operation over a wide range of pulse widths, duty cycles and temperatures. Low thermal resistance, refractory gold metalization and automated wire bonding techniques maximize product consistency and reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C) Symbol VCC PDISS IC TJ T STG Parameter Collector-Supply Voltage Power Dissipation Device Current Junction Temperature Storage Temperature Value Unit 48 375 12 200 -65 to +200 V W A C C 0.4 C/W Thermal Data RTH(J-C) Thermal Resistance Junction-case MSCXXXX.PDF 01-19-99 MS2619 ELECTRICAL SPECIFICATIONS (Tcase (Tcase = 25 25 C) STATIC Symbol Test Conditions Min. Value Typ. Max. Unit BVCBO IC = 40 mA IE = 0 mA 55 --- --- V BVEBO IE = 8 mA IC = 0 mA 3.5 --- --- V BVCER IC = 40 mA RBE = 10 55 --- --- V ICES VCE = 42 V --- --- 30 mA HFE VCE = 5 V 30 --- 150 --- Min. Value Typ. Max. Unit 105 --- --- W 32 --- --- 6.2 --- --- % dB IC = 4 A DYNAMIC Symbol Test Conditions POUT f = 2900 - 3100 MHz PIN = 25W C f = 2900 - 3100 MHz PIN = 25W GP f = 2900 - 3100 MHz PIN = 25W Condition s Pulse Width = 50 sec FREQ ZIN() ZCL() 2.9 GHz 15.0 - j9.0 5.0 - j1.0 3.0 GHz 20.0 - j9.5 4.8 + j0.5 3.1 GHz 13.5 - j5.0 3.5 + j2.5 MSCXXXX.PDF 01-19-99 VCC = 42V VCC = 42V Duty Cycle = 10% IMPEDANCE DATA PIN = 25 W VCC = 42 V VCC = 42V MS2619 PACKAGE MECHANICAL DATA MSCXXXX.PDF 01-19-99