MSCXXXX.PDF 01-19-99
MS2619
DESCRIPTION:DESCRIPTION:
The MS2619 is a high power silicon bipolar NPN transistor
specifically designed for pulsed S-Band radar output and
driver applications.
The MS2619 is capable of operation over a wide range of pulse
widths, duty cycles and temperatures. Low thermal resistance,
refractory gold metalization and automated wire bonding
techniques maximize product consistency and reliability.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
VCC Collector-Supply Voltage 48 V
PDISS Power Dissipation 375 W
ICDevice Current 12 A
TJJunction Temperature 200 °°C
TSTG Storage Temperature -65 to +200 °°C
Thermal DataThermal Data
RTH(J-C) Thermal Resistance Junction-case 0.4 °°C/W
FeaturesFeatures
• 2.9 – 3.1 GHz
• 42 VOLTS
• INPUT/OUTPUT MATCHING
• POUT = 105 WATTS
• GP = 6.2 dB GAIN MINIMUM
• COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLACATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MSCXXXX.PDF 01-19-99
MS2619
ELECTRICAL SPECIFICATIONS ( ELECTRICAL SPECIFICATIONS (Tcase = 25Tcase = 25°°C)C)
STATICSTATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCBO IC = 40 mA IE = 0 mA 55 --- --- V
BVEBO IE = 8 mA IC = 0 mA 3.5 --- --- V
BVCER IC = 40 mA RBE = 10 ΩΩ 55 --- --- V
ICES VCE = 42 V --- --- 30 mA
HFE VCE = 5 V IC = 4 A 30 --- 150 ---
DYNAMICDYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
POUT f = 2900 - 3100 MHz PIN = 25W VCC = 42V 105 --- --- W
ηηCf = 2900 - 3100 MHz PIN = 25W VCC = 42V 32 --- --- %%
GPf = 2900 - 3100 MHz PIN = 25W VCC = 42V 6.2 --- --- dB
Condition
s
Pulse Width = 50µµsec Duty Cycle = 10%
IMPEDANCE DATAIMPEDANCE DATA
FREQ ZIN(Ω)Ω) ZCL(Ω)Ω)
2.9 GHz 15.0 – j9.0 5.0 – j1.0
3.0 GHz 20.0 – j9.5 4.8 + j0.5
3.1 GHz 13.5 – j5.0 3.5 + j2.5
PIN = 25 W
VCC = 42 V
MSCXXXX.PDF 01-19-99
MS2619
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
