52098HA (KT)/62094MT (KOTO) AX-8060 No.3961-1/4
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP Epitaxial Planar Silicon Transistor/
Composite Schottky Barrier Diode
DC-DC Converter Applications
Ordering number:EN3961A
FP102
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]RT[ egatloVesaB-ot-rotcelloCV
OBC 51–V
egatloVrettimE-ot-rotcelloCV
OEC 11–V
egatloVesaB-ot-rettimEV
OBE 7–V
tnerruCrotcelloCI
C3–A
)esluP(tnerruCrotcelloCI
PC 5–A
tnerruCesaBI
B006–Am
noitapissiDrotcelloCP
C3.1W
erutarepmeTnoitcnuJjT 051
]DBS[ egatloVesreveRkaePevititepeRV
MRR 03V
egatloVegruSesreveRkaePevititeper-noNV
MSR 53V
tnerruCdeifitceRegarevAI
O007Am
tnerruCdrawroFegruSI
MSF elcyc1,evaweniszH05 5A
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
Specifications
Absolute Maximum Ratings at Ta = 25˚C
1:Base
2:Common
3:Emitter
4:Common
5:Anode
6:Common
7:Common
(Common:Collcector,
Cathode)
SANYO:PCP4
(Bottom view)
Package Dimensions
unit:mm
2088A
[FP102]
Features
· Composite type with a PNP transistor and a Shottky
barrier diode contained in one package, facilitating
high-density mounting.
· The FP102 is formed with 2chips, one being equiva-
lent to the 2SB1396 and the other the SB07-03C,
placed in one package.
Marking:102
Electrical Connection
˚C
˚C
˚C
Continued on next page.
1:Base
2:Common
3:Emitter
4:Common
5:Anode
6:Common
7:Common
(Common:Collcector, Cathode)
(Top view)
Mounted on ceramic board (250mm2×0.8mm)
FP102
No.3961-2/4
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nimpytxam
]RT[ tnerruCffotuCrotcelloCI
OBC VBC I,V21–= E0=1.0–Aµ
tnerruCffotuCrettimEI
OBE VBE I,V6–= C0=1.0–Aµ
niaGtnerruCCD hEF 1V
EC I,V2–= CA5.0–=041065
hEF 2V
EC I,V2–= CA3–=07
tcudorPhtdiwdnaB-niaGf
TVEC I,V2–= CA3.0–=004zHM
ecnaticapaCtuptuOboCV
BC zHM1=f,V01–=62Fp
egatloVnoitarutaSE-CV
)tas(EC ICI,A5.1–= BAm03–=22.0–4.0–V
egatloVnoitarutaSE-BV
)tas(EB ICI,A5.1–= BAm03–=9.0–2.1–V
egatloVnwodkaerBB-CV
OBC)RB( ICI,Aµ01–= E0=51–V
egatloVnwodkaerBE-CV
OEC)RB( ICR,Am1–= EB =∞11–V
egatloVnwodkaerBB-EV
OBE)RB( IE0=CI,Aµ01–=7–V
emiTNO-nruTt
no tiucriCtseTdeificepseeS52sn
emiTegarotSgtsttiucriCtseTdeificepseeS002sn
emiTllaFt
ftiucriCtseTdeificepseeS01sn
]DBS[ egatloVesreveRV
RIRAµ003=03V
egatloVdrawroFV
FIFAm007= 55.0V
tnerruCesreveRI
RVRV51= 08Aµ
ecnaticapaClanimretretnICV
RzHM1=f,V01=82Fp
emiTyrevoceResreveRt
rr IFI= RtiucriCtseTdeificepseeS,Am001= 01sn
ecnatsiseRlamrehTa-jhtR 021
Continued from preceding page.
Electrical Characteristics at Ta=25˚C
˚C/W
Switching Time T est Circuit
(TR) (SBD)
Mounted on ceramic board (250mm2×0.8mm)
FP102
No.3961-3/4
FP102
PS No.3961-4/4
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
