C4D10120D - WOLFSPEED - Datasheet.Live

1C4D10120D Rev. H, 09-2016

C4D10120D

Silicon Carbide Schottky Diode

Z-Rec® Rectifier

Features

• 1.2kVSchottkyRectier

• ZeroReverseRecoveryCurrent

• High-FrequencyOperation

• Temperature-IndependentSwitching

• ExtremelyFastSwitching

Benets

• ReplaceBipolarwithUnipolarRectiers

• EssentiallyNoSwitchingLosses

• HigherEfciency

• ReductionofHeatSinkRequirements

• ParallelDevicesWithoutThermalRunaway

Applications

• SwitchModePowerSupplies(SMPS) 

• BoostdiodesinPFCorDC/DCstages

• FreeWheelingDiodesinInverterstages

• AC/DCconverters

Package

TO-247-3

Maximum Ratings (TC=25°Cunlessotherwisespecied)

Symbol Parameter Value Unit Test Conditions Note

VRRM RepetitivePeakReverseVoltage 1200 V

VRSM SurgePeakReverseVoltage 1300 V

VRDCPeakReverseVoltage 1200 V

ContinuousForwardCurrent

(PerLeg/Device)

19/38

9/18

5/10

TC=25˚C

TC=135˚C

TC=160˚C

Fig.3

IFRM RepetitivePeakForwardSurgeCurrent 26*

18* ATC=25˚C,tP=10ms,HalfSinePulse

TC=110˚C,tP=10ms,HalfSinePulse

IFSM Non-RepetitiveForwardSurgeCurrent 46*

36* ATC=25˚C,tP=10ms,HalfSinePulse

TC=110˚C,tP=10ms,HalfSinePulse Fig.8

IF,Max Non-RepetitivePeakForwardCurrent 400*

320* ATC=25˚C,tP=10ms,Pulse

TC=110˚C,tP=10ms,Pulse Fig.8

Ptot PowerDissipation(PerLeg/Device) 93/187

40/81 WTC=25˚C

TC=110˚C Fig.4

dV/dt DiodedV/dtruggedness 200 V/ns VR=0-650V

∫i2dt i2tvalue 10.6*

6.5* A2sTC=25˚C,tP=10ms

TC=110˚C,tP=10ms

TJ OperatingJunctionRange -55to

+175 ˚C

Tstg StorageTemperatureRange -55to

+135 ˚C

TO-247MountingTorque 1

8.8

lbf-in

M3Screw

6-32Screw

*PerLeg,**PerDevice

Part Number Package Marking

C4D10120D TO-247-3 C4D10120

VRRM  =  1200V

IF (TC=135˚C) =18A**

Qc   = 54nC**

2C4D10120D Rev. H, 09-2016

Electrical Characteristics (Per Leg)

Symbol Parameter Typ. Max. Unit Test Conditions Note

VFForwardVoltage 1.4

1.9

1.8

3VIF=5ATJ=25°C

IF=5ATJ=175°C Fig.1

IRReverseCurrent 20

150

300 μA VR=1200VTJ=25°C

VR=1200VTJ=175°C Fig.2

QCTotalCapacitiveCharge 27 nC

VR=800V,IF=5A

di/dt=200A/μs

TJ=25°C

Fig.5

C TotalCapacitance

390

VR=0V,TJ=25°C,f=1MHz

VR=400V,TJ=25˚C,f=1MHz

VR=800V,TJ=25˚C,f=1MHz

Fig.6

ECCapacitanceStoredEnergy 8.0 μJ VR=800V Fig.7

Note:Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.

Thermal Characteristics

Symbol Parameter Typ. Unit Note

RθJC ThermalResistancefromJunctiontoCase 1.6*

0.8** °C/W Fig.9

*PerLeg,**PerDevice

Typical Performance (Per Leg)

00.5 11.5 22.5 33.5

Current (A)

Voltage (V)

Figure1.ForwardCharacteristics Figure2.ReverseCharacteristics

100

200

300

400

500

600

700

800

900

1000

0500 1000 1500 2000

Current (µA)

Voltage (V)

TJ=-55°C

TJ=25°C

TJ=75°C

TJ=125°C

TJ=175°C

TJ=-55°C

TJ=25°C

TJ=75°C

TJ=125°C

TJ=175°C

IF (A)

VF (V)

IR (μA)

VR (V)

3C4D10120D Rev. H, 09-2016

IF(PEAK) Peak Forward Current (A)

C4D10120D Per Leg Current Derating

25 50 75 100 125 150 175

IF(PEAK) Peak Forward Current (A)

Tc Case Temperature (C)

Figure3.CurrentDerating Figure4.PowerDerating

0.0

10.0

20.0

30.0

40.0

50.0

60.0

70.0

80.0

90.0

100.0

25 50 75 100 125 150 175

Figure5.RecoveryChargevs.ReverseVoltage  Figure6.Capacitancevs.ReverseVoltage

Typical Performance (Per Leg)

100

150

200

250

300

350

400

450

0.1 110 100 1000

0200 400 600 800 1000

TC ˚C

IF(peak) (A)

PTot (W)

TC ˚C

Qc (nC)

VR (V)

C (pF)

VR (V)

10%Duty

20%Duty

30%Duty

50%Duty

70%Duty

DC

4C4D10120D Rev. H, 09-2016

6.0

8.0

10.0

12.0

14.0

Capacitive Energy (uJ)

0.0

2.0

4.0

0 200 400 600 800 1000

Capacitive Energy (uJ)

VRReverse Voltage (V)

Typical Performance

100

1000

IFSM(A)

1.E-05 1.E-04 1.E-03 1.E-02

tp(s)

1000

100

Figure7.TypicalCapacitanceStoredEnergy,perleg Figure8.Non-repetitivepeakforwardsurgecurrent

versuspulseduration(sinusoidalwaveform),perleg

tp (s)

IFSM (A)

TJ_initial=25°C

TJ_initial=110°C

VR (V)

02004006008001000

EC(mJ)

1E-051E-041E-031E-02

Figure9.DeviceTransientThermalImpedance

1E-3

10E-3

100E-3

1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1

Junction To Case Impedance, Z

thJC

(

C/W)

Time, t

(s)

0.5

0.3

0.1

0.05

0.02

0.01

SinglePulse

Thermal Resistance (˚C/W)

T (Sec)

5C4D10120D Rev. H, 09-2016

Part Number Package Marking

C4D10120D TO-247-3 C4D10120

Package Dimensions

Package TO-247-3

NOTE ;

1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT

2. DIMENSIONING & TOLERANCEING CONFIRM TO

ASME Y14.5M-1994.

3. ALL DIMENSIONS ARE IN MILLIMETERS.

ANGLES ARE IN DEGREES.

4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT

OF JEDEC outlines TO-247 AD.

1 - GATE

2 - DRAIN (COLLECTOR)

3 - SOURCE (EMITTER)

4 - DRAIN (COLLECTOR)

TITLE:

SHEET

COMPANY ASE Weihai

1 OF 3

ASE Advanced

Semiconductor

Engineering Weihai, Inc.

PACKAGE

OUTLINE ISSUE

DATE

DWG NO. 98WHP03165A

Sep.05, 2016

TO-247 3LD, Only For Cree

Recommended Solder Pad Layout

TO-247-3

POS Inches Millimeters

Min Max Min Max

A .190 .205 4.83 5.21

A1 .090 .100 2.29 2.54

A2 .075 .085 1.91 2.16

b .042 .052 1.07 1.33

b1 .075 .095 1.91 2.41

b3 .113 .133 2.87 3.38

c .022 .027 0.55 0.68

D .819 .831 20.80 21.10

D1 .640 .695 16.25 17.65

D2 .037 .049 0.95 1.25

E .620 .635 15.75 16.13

E1 .516 .557 13.10 14.15

E2 .145 .201 3.68 5.10

E3 .039 .075 1.00 1.90

E4 .487 .529 12.38 13.43

e .214 BSC 5.44 BSC

L .780 .800 19.81 20.32

L1 .161 .173 4.10 4.40

N 3

ØP .138 .144 3.51 3.65

Q .216 .236 5.49 6.00

S .238 .248 6.04 6.30

T 17.5° REF

W3.5° REF

X 4° REF

all units are in inches

Note: Recommended soldering proles can be found in the applications note here:

http://www.wolfspeed.com/power_app_notes/soldering

66 C4D10120A Rev. H, 09-2016

The information in this document is subject to change without notice.

Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703

USA Tel: +1.919.313.5300

Fax: +1.919.313.5451

www.cree.com/power

• RoHSCompliance

The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred

to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance

with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can

be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http://

www.wolfspeed.com/power/tools-and-support/product-ecology.

• REAChCompliance

REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-

cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable

future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.

REACh banned substance information (REACh Article 67) is also available upon request.

• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into

the human body nor in applications in which failure of the product could lead to death, personal injury or property

damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,

cardiacdebrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrol

systems,orairtrafccontrolsystems.

Notes

RelatedLinks

• Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes

• Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2

• SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i

Diode Model

TTT

RIfVVf *+=

Note: Tjis diode junction temperature in degrees

Celsius

RT= 0.08 + (Tj* 8.5*10-4)

VT= 0.96 + (Tj* -1.22*10-3)

Note: Tj = Diode Junction Temperature In Degrees Celsius,

valid from 25°C to 175°C