APTC90H12SCTG
APTC90H12SCTG – Rev 1 September, 2009
www.microsemi.com 1
–
6
OUT1 OUT2
G1
S1
CR2A
Q1
CR1A
CR3BCR1B
G2
S2
NTC1
CR2B
Q2 CR4B
0/VBUS
CR4A
CR3A
G4
G3
S3
S4
Q4
NTC2
Q3
VBUS
OUT1
OUT2
NTC1
NTC2
G3
S3
VBUS
G1
S1
G4
G2
S2
0/VBUS
S4
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 900 V
Tc = 25°C 30
ID Continuous Drain Current Tc = 80°C 23
IDM Pulsed Drain current 75
A
VGS Gate - Source Voltage ±20 V
RDSon Drain - Source ON Resistance 120 mΩ
PD Maximum Power Dissipation Tc = 25°C 250 W
IAR Avalanche current (repetitive and non repetitive) 8.8 A
EAR Repetitive Avalanche Energy 2.9
EAS Single Pulse Avalanche Energy 1940 mJ
VDSS = 900V
RDSon = 120mΩ max @ Tj = 25°C
ID = 30A @ Tc = 25°C
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
•
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
• Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Full - Bridge
Series & SiC parallel diodes
Super Junction
MOSFET Power Module
APTC90H12SCTG
APTC90H12SCTG – Rev 1 September, 2009
www.microsemi.com 2
–
6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 900V Tj = 25°C 100
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 900V Tj = 125°C 500 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 26A 100 120 mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 3mA 2.5 3 3.5 V
IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V 100 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 6800
Coss Output Capacitance
VGS = 0V ; VDS = 100V
f = 1MHz 330 pF
Qg Total gate Charge 270
Qgs Gate – Source Charge 32
Qgd Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 26A 115
nC
Td(on) Turn-on Delay Time 70
Tr Rise Time 20
Td(off) Turn-off Delay Time 400
Tf Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 600V
ID = 26A
RG = 7.5Ω 25
ns
Eon Turn-on Switching Energy 900
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5Ω 750
µJ
Eon Turn-on Switching Energy 1278
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5Ω 867 µJ
Series diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 200 V
Tj = 25°C 250
IRM Maximum Reverse Leakage Current VR=200V Tj = 125°C 500 µA
IF DC Forward Current Tc = 85°C 30 A
IF = 30A 1.1 1.15
IF = 60A 1.4
VF Diode Forward Voltage
IF = 30A Tj = 125°C 0.9
V
Tj = 25°C 24
trr Reverse Recovery Time
Tj = 125°C 48
ns
Tj = 25°C 33
Qrr Reverse Recovery Charge
IF = 30A
VR = 133V
di/dt = 200A/µs
Tj = 125°C 150
nC
APTC90H12SCTG
APTC90H12SCTG – Rev 1 September, 2009
www.microsemi.com 3
–
6
Parallel diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1200 V
Tj = 25°C 32 200
IRM Maximum Reverse Leakage Current VR=1200V Tj = 175°C 56 1000 µA
IF DC Forward Current Tc = 100°C 10 A
Tj = 25°C 1.6 1.8
VF Diode Forward Voltage IF = 10A Tj = 175°C 2.3 3 V
QC Total Capacitive Charge IF = 10A, VR = 600V
di/dt =500A/µs 40 nC
f = 1MHz, VR = 200V 96
Q Total Capacitance f = 1MHz, VR = 400V 69 pF
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Transistor 0.5
Series diode 1.2
RthJC Junction to Case Thermal Resistance
Parallel SiC diode 1.8
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 4000 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To Heatsink M5 2.5 4.7 N.m
Wt Package Weight 160 g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 50 kΩ
∆R25/R25 5 %
B25/85 T
25 = 298.15 K 3952 K
∆B/B TC=100°C 4
%
⎥
⎦
⎤
⎢
⎣
⎡
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛−
=
TT
B
R
RT11
exp
25
85/25
25
T: Thermistor temperature
RT: Thermistor value at T
APTC90H12SCTG
APTC90H12SCTG – Rev 1 September, 2009
www.microsemi.com 4
–
6
SP4 Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
Typical CoolMOS Performance Curve
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
10 12.5 15 17.5 20 22.5 25
ID, Drain Cur rent (A)
Frequency (kHz)
Operating Frequency vs Drain Current
V
DS
=600V
D=50%
R
G
=7.5Ω
T
J
=125°C
T
C
=75°C
Switchin g Energy vs Current
Eon
Eoff
0
1
1
2
2
5 10152025303540
ID, Drain Curr en t (A)
Eon and Eoff (mJ)
V
DS
=600V
R
G
=7.5Ω
T
J
=125°C
L=100µH
ON resistance vs Temperature
0.5
1.0
1.5
2.0
2.5
3.0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
RDS(on), Drain to Source ON resistance
(Normalized)
Switching En ergy vs Gate Resistance
Eon
Eoff
0
1
2
3
5 101520253035
Gate Resistance (Ohms)
Switching Energy (mJ)
V
DS
=600V
I
D
=26A
T
J
=125°C
L=100µH
APTC90H12SCTG
APTC90H12SCTG – Rev 1 September, 2009
www.microsemi.com 5
–
6
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Second s)
Thermal Impedance (°C/W)
Maximum Effective Transient Therm al Impedance, Junction to Case vs Pulse Duration
5V
6V
0
40
80
120
0 5 10 15 20
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
Low Voltage Output Characteristics
VGS=20, 8V
0
5
10
15
20
25
30
35
25 50 75 100 125 150
T
C
, Case Temperature (°C)
I
D
, DC Drain Cu r rent (A)
DC Drai n Cu rr en t vs Cas e Temp er atu r e
900
925
950
975
1000
25 50 75 100 125
T
J
, Junction Temperature (°C)
Breakdown Vol t ag e vs Temp er at ur e
BV
DSS
, Drain to Source Breakdown
Voltage
Maxim u m S af e Op er ati n g Area
10 ms
100 µs
0.1
1
10
100
1000
1 10 100 1000
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Cu r ren t (A)
limited b
y
R
D
S
on
Single pulse
T
J
=150°C
T
C
=25°C
Ciss
Crss
Coss
1
10
100
1000
10000
100000
0 25 50 75 100 125 150 175 200
V
DS
, Drain to Source Voltage (V)
C, Capacitance ( pF)
Capacitance vs Drain to Source Voltage
0
2
4
6
8
10
0 50 100 150 200 250 300
Gate Charge (nC)
V
GS
, Gate to So urce Voltage (V)
Gate Charge vs Gate to Source Voltage
V
DS
=400V
I
D
=26A
T
J
=25°C
APTC90H12SCTG
APTC90H12SCTG – Rev 1 September, 2009
www.microsemi.com 6
–
6
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.4
0.8
1.2
1.6
2
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Forward Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
5
10
15
20
00.511.522.533.5
V
F
Forward Voltage (V)
I
F
Forward Current (A)
Reverse Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
25
50
75
100
400 600 800 1000 1200 1400 1600
V
R
Reverse Vo l t ag e (V )
I
R
Reverse Current (µA)
Capacita n ce vs.Reverse V o ltage
0
100
200
300
400
500
600
700
1 10 100 1000
V
R
Reverse Voltage
C, Capacitance (pF)
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS ” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
