INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
8/30/04
www.irf.com 1
IRGB4B60KD1PbF
IRGS4B60KD1PbF
IRGSL4B60KD1PbF
E
G
n-channel
C
VCES = 600V
IC = 7.6A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 2.1V
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
D2Pak
IRGS4B60KD1
TO-262
IRGSL4B60KD1
TO-220
IRGB4B60KD1
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 11
IC @ TC = 100°C Continuous Collector Current 7.6 A
ICM Pulse Collector Current (Ref.Fig.C.T.5) 22
ILM Clamped Inductive Load current
c
22
IF @ TC = 25°C Diode Continuous Forward Current 11
IF @ TC = 100°C Diode Continuous Forward Current 6.7
IFM Diode Maximum Forward Current 22
VGE Gate-to-Emitter Voltage ±20 V
PD @ TC = 25°C Maximum Power Dissipation 63 W
PD @ TC = 100°C Maximum Power Dissipation 31
TJOperating Junction and -55 to +175
TSTG Storage Temperature Range °C
Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case- IGBT ––– ––– 2.4 °C/W
RθJC Junction-to-Case- Diode ––– ––– 6.1
RθCS Case-to-Sink, flat, greased surface ––– 0.50 –––
RθJA Junction-to-Ambient ––– ––– 62
RθJA Junction-to-Ambient (PCB Mount, steady state)
d
––– ––– 40
Wt Weight ––– 1.44 ––– g
PD - 95616A
• Lead-Free
IRGB/S/SL4B60KD1PbF
2www.irf.com
Note to are on page 16
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Volta
ge
—0.28—V/°C
VGE = 0V, IC = 1mA (25°C-150°C)
—2.12.5 IC = 4.0A, VGE = 15V, TJ = 25°C 5,6,7
VCE(on) Collector-to-Emitter Voltage — 2.5 2.8 V IC = 4.0A, VGE = 15V, TJ = 150°C 9,10,11
—2.62.9 IC = 4.0A, VGE = 15V, TJ = 175°C
VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250µA 9,10,11
∆VGE(th)/∆TJThreshold Voltage temp. coefficient — -8.1 — mV/°
C
VCE = VGE, IC = 1mA (25°C-150°C) 12
gfe Forward Transconductance — 1.7 — S VCE = 50V, IC = 4.0A, PW = 80µs
—1.0150 VGE = 0V, VCE = 600V
ICES Zero Gate Voltage Collector Current — 136 600 µA VGE = 0V, VCE = 600V, TJ = 150°C
— 722 2400 VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop — 1.4 2.0 V IF = 4.0A 8
—1.31.8 IF = 4.0A, TJ = 150°C
—1.21.7 IF = 4.0A, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
QgTotal Gate Charge (turn-on) — 12 — IC = 4.0A 23
Qge Gate-to-Emitter Charge (turn-on) — 1.7 — nC VCC = 400V CT1
Qgc Gate-to-Collector Charge (turn-on) — 6.5 — VGE = 15V
Eon Turn-On Switching Loss — 73 80 IC = 4.0A, VCC = 400V CT4
Eoff Turn-Off Switching Loss — 47 53 µJ VGE = 15V, RG = 100Ω, L = 2.5mH
Etot Total Switching Loss — 120 130 TJ = 25°C
e
td(on) Turn-On delay time — 22 28 IC = 4.0A, VCC = 400V
trRise time — 18 23 ns VGE = 15V, RG = 100Ω, L = 2.5mH CT4
td(off) Turn-Off delay time — 100 110 TJ = 25°C
tfFall time — 66 80
Eon Turn-On Switching Loss — 130 150 IC = 4.0A, VCC = 400V CT4
Eoff Turn-Off Switching Loss — 83 140 µJ VGE = 15V, RG = 100Ω, L = 2.5mH 13,15
Etot Total Switching Loss — 220 280 TJ = 150°C
e
WF1,WF2
td(on) Turn-On delay time — 22 27 IC = 4.0A, VCC = 400V 14,16
trRise time — 18 22 ns VGE = 15V, RG = 100Ω, L = 2.5mH CT4
td(off) Turn-Off delay time — 120 130 TJ = 150°C WF1
tfFall time — 79 89 WF2
Cies Input Capacitance — 190 — VGE = 0V
Coes Output Capacitance — 25 — pF VCC = 30V 22
Cres Reverse Transfer Capacitance — 6.2 — f = 1.0MHz
RBSOA Reverse Bias Safe Operating Area FULL SQUARE TJ = 150°C, IC = 22A, Vp = 600V 4
VCC=500V,VGE = +15V to 0V,RG = 100Ω CT2
SCSOA Short Circuit Safe Operating Area 10 — — µs TJ = 150°C, Vp = 600V, RG = 100Ω CT3
VCC=360V,VGE = +15V to 0V WF4
Erec Reverse Recovery Energy of the Diode — 81 100 µJ TJ = 150°C 17,18,19
trr Diode Reverse Recovery Time — 93 — ns VCC = 400V, IF = 4.0A, L = 2.5mH 20,21
Irr Peak Reverse Recovery Current — 6.3 7.9 A VGE = 15V, RG = 100ΩCT4,WF3
IRGB/S/SL4B60KD1PbF
www.irf.com 3
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
0 20 40 60 80 100 120 140 160 180
TC (°C)
0
10
20
30
40
50
60
70
Ptot (W)
0 1 10 100 1000 10000
VCE (V)
0.01
0.1
1
10
100
IC (A)
10ms
DC
1ms
100µs
10 100 1000
VCE (V)
0
1
10
100
IC A)
0 20 40 60 80 100 120 140 160 180
TC (°C)
0
2
4
6
8
10
12
IC (A)
IRGB/S/SL4B60KD1PbF
4www.irf.com
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
0246810 12
VCE (V)
0
5
10
15
20
25
30
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0246810 12
VCE (V)
0
5
10
15
20
25
30
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0246810 12
VCE (V)
0
5
10
15
20
25
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VF (V)
0
5
10
15
20
25
30
35
IF (A)
-40°C
25°C
150°C
IRGB/S/SL4B60KD1PbF
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Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
Fig. 12 - Typ. Transfer Characteristics
VCE = 360V; tp = 10µs
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 2.0A
ICE = 4.0A
ICE = 8.0A
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 2.0A
ICE = 4.0A
ICE = 8.0A
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 2.0A
ICE = 4.0A
ICE = 8.0A
0 5 10 15 20
VGS, Gate-to-Source Voltage (V)
0
5
10
15
20
25
30
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 150°C
IRGB/S/SL4B60KD1PbF
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Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=2.5mH; VCE= 400V
RG= 100Ω; VGE= 15V
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L=2.5mH; VCE= 400V,
RG= 100Ω; VGE= 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=2.5mH; VCE= 400V
ICE= 4.0A; VGE= 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=2.5mH; VCE= 400V
ICE= 4.0A; VGE= 15V
12345678910
IC (A)
0
50
100
150
200
250
300
350
Energy (µJ)
EOFF
EON
0100 200 300 400 500
RG (Ω)
0
50
100
150
200
250
300
350
Energy (µJ)
EON
EOFF
0246810
IC (A)
1
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
0100 200 300 400 500
RG (Ω)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
IRGB/S/SL4B60KD1PbF
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Fig. 17 - Typical Diode IRR vs. IF
TJ = 150°C
Fig. 18 - Typical Diode IRR vs. RG
TJ = 150°C; IF = 4.0A
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V;TJ = 150°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
IF = 4.0A; TJ = 150°C
012345678910
IF (A)
1
2
3
4
5
6
7
8
9
10
IRR (A)
RG = 100Ω
RG = 200Ω
RG = 330Ω
RG = 470Ω
0100 200 300 400 500
RG (Ω)
2
3
4
5
6
7
IRR (A)
100 150 200 250 300
diF /dt (A/µs)
2
3
4
5
6
7
IRR (A)
0 50 100 150 200 250 300 350 400
diF /dt (A/µs)
100
200
300
400
500
600
700
QRR (µC)
100Ω
200Ω
470Ω
330Ω
4.0A
8.0A
2.0A
IRGB/S/SL4B60KD1PbF
8www.irf.com
Fig. 21 - Typical Diode ERR vs. IF
TJ = 150°C
Fig. 22- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 23 - Typical Gate Charge vs. VGE
ICE = 4.0A; L = 3150µH
012345678910
IF (A)
0
25
50
75
100
125
150
Energy (µJ)
200Ω
100Ω
330Ω
470 Ω
02468101214
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE (V)
300V
400V
020 40 60 80 100
VCE (V)
1
10
100
1000
Capacitance (pF)
Cies
Coes
Cres
IRGB/S/SL4B60KD1PbF
www.irf.com 9
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.0429 0.000001
1.3417 0.000178
1.0154 0.000627
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4Ri (°C/W) τi (sec)
0.0904 0.000003
1.6662 0.000117
3.5994 0.001610
0.7454 0.048846
IRGB/S/SL4B60KD1PbF
10 www.irf.com
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
1K
VCC
DUT
0
L
Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
L
Rg
VCC
diode clamp /
DUT
DUT /
DRIVER
- 5V
Rg
VCC
DUT
R =
V
CC
I
CM
L
Rg
80 V DUT
480V
+
-
DC
Driver
DUT
360V
IRGB/S/SL4B60KD1PbF
www.irf.com 11
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF4- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
-100
0
100
200
300
400
500
600
700
0.4 0.6 0.8 1 1.2
Time (uS)
Vce (V)
-2
0
2
4
6
8
10
12
14
Ice (A)
tf
Eoff Loss
90% Ice
5% Vce
5% Ice
Vce
Ic e
-100
0
100
200
300
400
500
600
700
0.35 0.45 0.55 0.65
Time (uS)
Vce (V)
-2
0
2
4
6
8
10
12
14
Ice (A)
Eon
Loss
tr
90% Ice
10% Ice
5% Vce
Vce
Ic e
-600
-500
-400
-300
-200
-100
0
100
0.05 0.15 0.25 0.35
Time (uS)
Vf (V)
-8
-6
-4
-2
0
2
4
6
If (A)
QRR
tRR
Peak
IRR
10% Peak
IRR
-50
0
50
100
150
200
250
300
350
400
30 40 50 60 70
Time (uS)
-5
0
5
10
15
20
25
30
35
40
I (A)
Vce
Ice
ICE (A)
VCE (V)
IRGB/S/SL4B60KD1PbF
12 www.irf.com
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EXAMPLE:
IN THE ASSEMBLY LINE "C"
T HIS IS AN IRF 1010
LOT CODE 1789
AS S E MB L E D ON WW 19, 1997 PART NUMBER
ASSEMBLY
LOT CODE
DAT E CODE
YEAR 7 = 1997
LINE C
WEEK 19
LOGO
RE CT IFIER
INT E R NAT IONAL
Note: "P" in assembly line
position indicates "Lead-Free"
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X 0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X 0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X 1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
LEAD ASSIGNMENTS
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
IRGB/S/SL4B60KD1PbF
www.irf.com 13
N ote: "P" in as s embly line
pos ition in dicates "L ead-F ree"
F530S
T H IS IS AN IR F 530S WIT H
LOT CODE 8024
AS S EMB LED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
AS S E M B L Y
LOT CODE
IN T E R N AT ION AL
RECTIFIER
LOGO
PART NUMBER
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
F 530S
A = ASSEMBLY SITE CODE
WEEK 02
P = DES IGNATES LEAD-FREE
PRODUCT (OPTIONAL)
RECTIFIER
IN T E R N AT IO N AL
LOGO
LOT CODE
AS S E MB L Y
YEAR 0 = 2000
DATE CODE
PART NUMBER
D2Pak Part Marking Information (Lead-Free)
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
IRGB/S/SL4B60KD1PbF
14 www.irf.com
TO-262 Part Marking Information
TO-262 Package Outline
ASSEMBLY
LOT CODE
RECTIFIER
INT E R NAT IONAL
ASS EMB LE D ON WW 19, 1997
N ote: "P " in as s embly line
pos ition indicates "L ead-F ree"
IN THE ASSEMBLY LINE "C" LOGO
T HIS IS AN IRL3103L
LOT CODE 1789
EXAMPLE:
LINE C
DAT E CODE
WEEK 19
YE AR 7 = 1997
PART NU MBER
PART NUMBER
LOGO
LOT CODE
ASSEMBLY
INT E R NAT IONAL
RECTIFIER
PRODU CT (OPTIONAL)
P = DE S IGN AT E S L E AD -F R E E
A = ASSEMBLY SITE CODE
WEE K 19
YE AR 7 = 1997
DATE CODE
OR
IRGB/S/SL4B60KD1PbF
www.irf.com 15
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/04
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
TO-220AB package is not recommended for Surface Mount Application.
Notes:
VCC = 80% (VCES), VGE = 15V, L = 100µH, RG = 100Ω.
When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer
to application note #AN-994.
Energy losses include "tail" and diode reverse recovery, using Diode FD059H06A5.
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
D2Pak Tape & Reel Infomation
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
