NCP161AFCS330T2G - ON Semiconductor

August, 2017 − Rev. 15 1Publication Order Number:

NCP160/D

NCP160

250 mA, Ultra-Low Noise

and High PSRR LDO

Regulator for RF and

Analog Circuits

The NCP160 is a linear regulator capable of supplying 250 mA

output current. Designed to meet the requirements of RF and analog

circuits, the NCP160 device provides low noise, high PSRR, low

quiescent current, and very good load/line transients. The device is

designed to work with a 1 mF input and a 1 mF output ceramic

capacitor. It is available in two thickness ultra−small 0.35P, 0.65 mm x

0.65 mm Chip Scale Package (CSP) and XDFN−4 0.65P, 1 mm x

1 mm.

Features

•Operating Input Voltage Range: 1.9 V to 5.5 V

•Available in Fixed Voltage Option: 1.8 V to 5.14 V

•±2% Accuracy Over Load/Temperature

•Ultra Low Quiescent Current Typ. 18 mA

•Standby Current: Typ. 0.1 mA

•Very Low Dropout: 80 mV at 250 mA

•Ultra High PSRR: Typ. 98 dB at 20 mA, f = 1 kHz

•Ultra Low Noise: 10 mVRMS

•Stable with a 1 mF Small Case Size Ceramic Capacitors

•Available in −WLCSP4 0.65 mm x 0.65 mm x 0.4 mm

−WLCSP4 0.65 mm x 0.65 mm x 0.33 mm

−XDFN4 1 mm x 1 mm x 0.4 mm

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

•Battery−powered Equipment

•Wireless LAN Devices

•Smartphones, Tablets

•Cameras, DVRs, STB and Camcorders

GND

OUT

OFF

Figure 1. Typical Application Schematics

VOUT

COUT

1 mF

Ceramic

VIN

NCP160

CIN

1 mF

Ceramic

WLCSP4

CASE 567KA

MARKING

DIAGRAMS

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X or XX = Specific Device Code

M = Date Code

See detailed ordering, marking and shipping information on

page 16 of this data sheet.

ORDERING INFORMATION

PIN CONNECTIONS

XDFN4

CASE 711AJ

A1 A2

B1 B2

IN OUT

EN GND

(Top View)

WLCSP4

CASE 567JZ

A1 X

1XX M

A1 X

NCP160

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Figure 2. Simplified Schematic Block Diagram

THERMAL

SHUTDOWN

MOSFET

DRIVER WITH

CURRENT LIMIT

INTEGRATED

SOFT−START

BANDGAP

REFERENCE

ENABLE

LOGIC

OUT

GND

* ACTIVE DISCHARGE

Version A only

PIN FUNCTION DESCRIPTION

Pin No.

CSP4 Pin No.

XDFN4 Pin

Name Description

A1 4 IN Input voltage supply pin

A2 1 OUT Regulated output voltage. The output should be bypassed with small 1 mF ceramic capacitor.

B1 3 EN Chip enable: Applying VEN < 0.4 V disables the regulator, Pulling VEN > 1.2 V enables the LDO.

B2 2 GND Common ground connection

− EPAD EPAD Expose pad can be tied to ground plane for better power dissipation

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit

Input Voltage (Note 1) VIN −0.3 V to 6V

Output Voltage VOUT −0.3 to VIN + 0.3, max. 6 V V

Chip Enable Input VCE −0.3 to VIN + 0.3, max. 6 V V

Output Short Circuit Duration tSC unlimited s

Maximum Junction Temperature TJ150 °C

Storage Temperature TSTG −55 to 150 °C

ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V

ESD Capability, Machine Model (Note 2) ESDMM 200 V

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be af fected.

1. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area.

2. This device series incorporates ESD protection and is tested by the following methods:

ESD Human Body Model tested per EIA/JESD22−A114

ESD Machine Model tested per EIA/JESD22−A115

Latchup Current Maximum Rating tested per JEDEC standard: JESD78.

THERMAL CHARACTERISTICS

Rating Symbol Value Unit

Thermal Characteristics, CSP4 (Note 3)

Thermal Resistance, Junction−to−Air RqJA

108

°C/W

Thermal Characteristics, XDFN4 (Note 3)

Thermal Resistance, Junction−to−Air 198.1

3. Measured according to JEDEC board specification. Detailed description of the board can be found in JESD51−7

NCP160

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ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 1 V; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise

noted. VEN = 1.2 V. Typical values are at TJ = +25°C (Note 4).

Parameter Test Conditions Symbol Min Typ Max Unit

Operating Input Voltage VIN 1.9 5.5 V

Output Voltage Accuracy VIN = VOUT(NOM) + 1 V

0 mA ≤ IOUT ≤ 250 mA VOUT −2 +2 %

Line Regulation VOUT(NOM) + 1 V ≤ VIN ≤ 5.5 V LineReg 0.02 %/V

Load Regulation IOUT = 1 mA to 250 mA LoadReg 0.001 %/mA

Dropout Voltage (Note 5) IOUT = 250 mA

VOUT(NOM) = 1.8 V

VDO

180 250

VOUT(NOM) = 2.5 V 110 175

VOUT(NOM) = 2.8 V 95 160

VOUT(NOM) = 2.85 V 95 160

VOUT(NOM) = 3.0 V 90 155

VOUT(NOM) = 3.2 V 85 149

VOUT(NOM) = 3.3 V 80 145

VOUT(NOM) = 3.5 V 75 140

VOUT(NOM) = 4.5 V 65 120

VOUT(NOM) = 5.0 V 75 105

VOUT(NOM) = 5.14 V 60 105

Output Current Limit VOUT = 90% VOUT(NOM) ICL 250 700 mA

Short Circuit Current VOUT = 0 V ISC 690

Quiescent Current IOUT = 0 mA IQ18 23 mA

Shutdown Current VEN ≤ 0.4 V, VIN = 4.8 V IDIS 0.01 1 mA

EN Pin Threshold Voltage EN Input Voltage “H” VENH 1.2 V

EN Input Voltage “L” VENL 0.4

EN Pull Down Current VEN = 4.8 V IEN 0.2 0.5 mA

T urn−On Time COUT = 1 mF, From assertion of VEN to

VOUT = 95% VOUT(NOM) 120 ms

Power Supply Rejection Ratio IOUT = 20 mA f = 100 Hz

f = 1 kHz

f = 10 kHz

f = 100 kHz PSRR 91

48 dB

Output Voltage Noise f = 10 Hz to 100 kHz IOUT = 1 mA

IOUT = 250 mA VN14

10 mVRMS

Thermal Shutdown Threshold Temperature rising TSDH 160 °C

Temperature falling TSDL 140 °C

Active Output Discharge Resistance VEN < 0.4 V, Version A only RDIS 280 W

Line Transient (Note 6) VIN = (VOUT(NOM) + 1 V) to (VOUT(NOM) +

1.6 V) in 30 ms, IOUT = 1 mA TranLINE

−1 mV

VIN = (VOUT(NOM) + 1.6 V) to (VOUT(NOM) +

1 V) in 30 ms, IOUT = 1 mA +1

Load Transient (Note 6) IOUT = 1 mA to 200 mA in 10 msTranLOAD −40 mV

IOUT = 200 mA to 1mA in 10 ms+40

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Performance g u a r anteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C.

Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.

5. Dropout voltage is characterized when VOUT falls 100 mV below VOUT(NOM).

6. Guaranteed by design.

NCP160

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TYPICAL CHARACTERISTICS

Figure 3. Output Voltage vs. Temperature −

VOUT = 1.8 V − XDFN Package Figure 4. Output Voltage vs. Temperature −

VOUT = 2.5 V − XDFN Package

TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

1201008060200−20−40

1.780

1.785

1.790

1.810

1.800

1.805

1.815

1.820

1201008060400−20−40

2.480

2.485

2.490

2.495

2.500

2.510

2.515

2.520

Figure 5. Output Voltage vs. Temperature −

VOUT = 3.3 V − XDFN Package Figure 6. Output Voltage vs. Temperature −

VOUT = 3.3 V − CSP Package

TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

1201008040200−20−40

3.25

3.26

3.27

3.28

3.29

3.31

3.32

3.33

1201008060400−20−40

3.27

3.28

3.29

3.30

3.31

3.33

3.34

3.35

Figure 7. Output Voltage vs. Temperature −

VOUT = 5.14 V − XDFN Package Figure 8. Line Regulation vs. Temperature −

VOUT = 1.8 V

TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

1201006040200−20−40

5.11

5.12

5.13

5.14

5.15

5.17

5.18

5.19

1201008060200−20−40

0.001

0.003

0.004

0.005

0.007

0.009

0.010

VOUT, OUTPUT VOLTAGE (V)

REGLINE, LINE REGULATION (%/V)

40 140

1.795

IOUT = 10 mA

IOUT = 250 mA

VIN = 2.8 V

VOUT = 1.8 V

CIN = 1 mF

COUT = 1 mF

20 140

2.505

IOUT = 10 mA

IOUT = 250 mA

VIN = 3.5 V

VOUT = 2.5 V

CIN = 1 mF

COUT = 1 mF

IOUT = 10 mA

IOUT = 250 mA

VIN = 4.3 V

VOUT = 3.3 V

CIN = 1 mF

COUT = 1 mF

3.30

60 140 20 140

VIN = 4.3 V

VOUT = 3.3 V

CIN = 1 mF

COUT = 1 mF

IOUT = 10 mA and 250 mA

3.32

80 140

IOUT = 10 mA

IOUT = 250 mA

VIN = 5.5 V

VOUT = 5.14 V

CIN = 1 mF

COUT = 1 mF

5.16

40 140

0.002

0.006

0.008

VIN = 2.8 V

VOUT = 1.8 V

CIN = 1 mF

COUT = 1 mF

NCP160

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TYPICAL CHARACTERISTICS

Figure 9. Line Regulation vs. Temperature −

VOUT = 3.3 V Figure 10. Line Regulation vs. Temperature −

VOUT = 5.14 V

TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

1201008060200−20−40

0.001

0.003

0.004

0.006

0.007

0.009

0.010

1201008060200−20−40

0.002

0.004

0.006

0.012

0.014

0.016

0.020

Figure 11. Load Regulation vs. Temperature −

VOUT = 1.8 V Figure 12. Load Regulation vs. Temperature −

VOUT = 3.3 V

TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

120806040200−20−40

0.0002

0.0006

0.0008

0.0010

0.0014

0.0016

0.0020

1201008060200−20−40

0.0002

0.0006

0.0008

0.0010

0.0014

0.0016

0.0020

Figure 13. Load Regulation vs. Temperature −

VOUT = 5.14 V Figure 14. Ground Current vs. Load Current −

VOUT = 1.8 V

TJ, JUNCTION TEMPERATURE (°C) IOUT, OUTPUT CURRENT (mA)

1201008040200−20−40

0.0002

0.0006

0.0008

0.0012

0.0014

0.0018

0.0020

22517515012510075250

0.15

0.45

0.60

0.90

1.05

1.35

1.50

REGLINE, LINE REGULATION (%/V)REGLOAD, LOAD REGULATION (%/mA)

REGLOAD, LOAD REGULATION (%/mA)

IGND, GROUND CURRENT (mA)

40 140

0.002

0.005

0.008

VIN = 4.3 V

VOUT = 3.3 V

CIN = 1 mF

COUT = 1 mF

40 140

0.008

0.010

0.018 VIN = 5.5 V

VOUT = 5.14 V

CIN = 1 mF

COUT = 1 mF

100 140

0.0004

0.0012

0.0018

VIN = 2.8 V

VOUT = 1.8 V

CIN = 1 mF

COUT = 1 mF

40 140

0.0004

0.0012

0.0018

VIN = 4.3 V

VOUT = 3.3 V

CIN = 1 mF

COUT = 1 mF

60 140

0.0004

0.0010

0.0016

VIN = 5.5 V

VOUT = 5.14 V

CIN = 1 mF

COUT = 1 mF

0.30

0.75

1.20

50 200 250

VIN = 2.8 V

VOUT = 1.8 V

CIN = 1 mF

COUT = 1 mF

TJ = 125°C

TJ = 25°C

TJ = −40°C

REGLINE, LINE REGULATION (%/V)

NCP160

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TYPICAL CHARACTERISTICS

Figure 15. Ground Current vs. Load Current −

VOUT = 3.3 V Figure 16. Ground Current vs. Load Current −

VOUT = 5.14 V

IOUT, OUTPUT CURRENT (mA) IOUT, OUTPUT CURRENT (mA)

2251751501257550250

0.15

0.45

0.60

0.90

1.05

1.35

1.50

22520015012510050250

0.15

0.45

0.60

0.90

1.05

1.35

1.50

Figure 17. Dropout Voltage vs. Load Current −

VOUT = 1.8 V Figure 18. Dropout Voltage vs. Load Current −

VOUT = 3.3 V

IOUT, OUTPUT CURRENT (mA) IOUT, OUTPUT CURRENT (mA)

2252001501007550250

100

150

175

225

250

22520015012510050250

120

150

Figure 19. Dropout Voltage vs. Load Current −

VOUT = 5.14 V Figure 20. Dropout Voltage vs. Temperature−

VOUT = 1.8 V

IOUT, OUTPUT CURRENT (mA) TJ, JUNCTION TEMPERATURE (°C)

22520015012510050250

105

135

150

1201008060200−20−40

100

150

175

225

250

IGND, GROUND CURRENT (mA)

VDROP, DROPOUT VOLTAGE (mV)

VIN = 4.3 V

VOUT = 3.3 V

CIN = 1 mF

COUT = 1 mF

TJ = 125°C

TJ = 25°C

TJ = −40°C

100 200 250

0.30

0.75

1.20

75 175 250

0.30

0.75

1.20

VIN = 5.5 V

VOUT = 5.14 V

CIN = 1 mF

COUT = 1 mF

TJ = 125°C

TJ = 25°C

TJ = −40°C

VOUT = 1.8 V

CIN = 1 mF

COUT = 1 mF

TJ = 125°C

TJ = 25°C

TJ = −40°C

125

200

125 175 250

VOUT = 3.3 V

CIN = 1 mF

COUT = 1 mF

TJ = 125°C

TJ = 25°C

TJ = −40°C

75 175 250

105

135

75 175 250

120

VOUT = 5.14 V

CIN = 1 mF

COUT = 1 mF

TJ = 125°C

TJ = 25°C

TJ = −40°C

40 140

125

200

IOUT = 0 mA

IOUT = 250 mA

VOUT = 1.8 V

CIN = 1 mF

COUT = 1 mF

NCP160

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TYPICAL CHARACTERISTICS

Figure 21. Comparison Dropout for XDFN and

CSP – 1.8 V

IOUT, OUTPUT CURRENT (mA)

2252001501251005025

200

DROP

, DROPOUT VOLTAGE (mV)

75 175 250

XDFN

CSP4

Package

180

160

140

120

100

Figure 22. Comparison Dropout for XDFN and

CSP – 3.3 V

IOUT, OUTPUT CURRENT (mA)

2252001501251005025

150

VDROP, DROPOUT VOLTAGE (mV)

75 175 25

XDFN

CSP4

Package

135

120

105

Figure 23. Comparison Dropout for XDFN and

CSP – 5.14 V

IOUT, OUTPUT CURRENT (mA)

2252001501251005025

VDROP, DROPOUT VOLTAGE (mV)

75 175 250

100

XDFN

CSP4

Package

NCP160

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TYPICAL CHARACTERISTICS

Figure 24. Dropout Voltage vs. Temperature−

VOUT = 3.3 V Figure 25. Dropout Voltage vs. Temperature−

VOUT = 5.14 V

TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

1201008060200−20−40

105

135

150

1201008060400−20−40

100

Figure 26. Current Limit vs. Temperature Figure 27. Short Circuit Current vs.

Temperature

TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

1201008060400−20−40

650

670

680

690

710

720

740

750

1201008060400−20−40

600

610

630

640

660

670

690

700

Figure 28. Enable Threshold Voltage vs.

Temperature Figure 29. Enable Current Temperature

TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

1201008060200−20−40

0.1

0.3

0.4

0.6

0.7

0.9

1.0

1201008060400−20−40

0.05

0.10

0.20

0.30

0.35

0.40

0.50

VDROP, DROPOUT VOLTAGE (mV)

ICL, CURRENT LIMIT (mA)

ICL, SHORT CIRCUIT CURRENT (mA)

VEN, ENABLE VOLTAGE THRESHOLD (V)

IEN, ENABLE PIN CURRENT (mA)

40 140

120

IOUT = 0 mA

IOUT = 250 mA

VOUT = 3.3 V

CIN = 1 mF

COUT = 1 mF

20 140

IOUT = 0 mA

IOUT = 250 mA

VOUT = 5.14 V

CIN = 1 mF

COUT = 1 mF

20 140

660

700

730

VIN = 4.3 V

VOUT = 90% VOUT(nom)

CIN = 1 mF

COUT = 1 mF

20 140

620

650

680

VIN = 4.3 V

VOUT = 0 V (Short)

CIN = 1 mF

COUT = 1 mF

40 140

0.2

0.5

0.8

OFF −> ON

ON −> OFF

VIN = 4.3 V

VOUT = 3.3 V

CIN = 1 mF

COUT = 1 mF

VIN = 4.3 V

VOUT = 3.3 V

CIN = 1 mF

COUT = 1 mF

20 140

0.15

0.25

0.45

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TYPICAL CHARACTERISTICS

Figure 30. Disable Current vs. Temperature Figure 31. Discharge Resistivity vs.

Temperature

TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

1201008060200−20−40

100

1201008060400−20−40

200

220

230

240

260

270

290

300

Figure 32. Output Voltage Noise Spectral Density − VOUT = 1.8 V

FREQUENCY (kHz)

10001001010.10.01

100

1000

10,000

Figure 33. Output Voltage Noise Spectral Density − VOUT = 3.3 V

FREQUENCY (kHz)

10001001010.10.01

100

1000

10,000

IDIS, DISABLE CURRENT (nA)

RDIS, DISCHARGE RESISTIVITY

OUTPUT VOLTAGE NOISE (nV/√Hz)

40 140

VIN = 4.3 V

VOUT = 3.3 V

CIN = 1 mF

COUT = 1 mF

20 140

210

250

280

VIN = 4.3 V

VOUT = 3.3 V

CIN = 1 mF

COUT = 1 mF

1 mA 14.62 14.10

10 mA 11.12 10.48

250 mA 10.37 9.82

10 Hz − 100 kHz 100 Hz − 100 kHz

RMS Output Noise (mV)

IOUT

1 mA 16.9 15.79

10 mA 12.64 11.13

250 mA 11.96 10.64

10 Hz − 100 kHz 100 Hz − 100 kHz

RMS Output Noise (mV)

IOUT

OUTPUT VOLTAGE NOISE (nV/√Hz)

VIN = 2.8 V

VOUT = 1.8 V

CIN = 1 mF

COUT = 1 mF

IOUT = 1 mA

IOUT = 250 mA

IOUT = 10 mA

VIN = 4.3 V

VOUT = 3.3 V

CIN = 1 mF

COUT = 1 mF

IOUT = 1 mA

IOUT = 250 mA

IOUT = 10 mA

NCP160

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TYPICAL CHARACTERISTICS

Figure 34. Power Supply Rejection Ratio,

VOUT = 1.8 V Figure 35. Power Supply Rejection Ratio,

VOUT = 3.3 V

FREQUENCY (kHz) FREQUENCY (kHz)

10k1k1001010.10.01

100

120

10k1k1001010.10.01

100

120

Figure 36. Power Supply Rejection Ratio,

VOUT = 5.14 V Figure 37. Stability vs. ESR

FREQUENCY (kHz) IOUT, OUTPUT CURRENT (mA)

10k1k1001010.10.01

100

300250200150100500

0.1

100

Figure 38. Enable Turn−on Response −

COUT = 1 mF, IOUT = 10 mA Figure 39. Enable Turn−on Response −

COUT = 1 mF, IOUT = 250 mA

100 ms/div 100 ms/div

RR, RIPPLE REJECTION (dB)

ESR (W)

500 mV/div

VIN = 2.5 V

VOUT = 1.8 V

COUT = 1 mF

IOUT = 10 mA

IOUT = 250 mA

IOUT = 20 mA

IOUT = 100 mA

VIN = 3.6 V

VOUT = 3.3 V

COUT = 1 mF

IOUT = 10 mA

IOUT = 250 mA

IOUT = 100 mA

IOUT = 20 mA

VIN = 5.5 V

VOUT = 5.14 V

COUT = 1 mF

IOUT = 10 mA

IOUT = 250 mA

IOUT = 20 mA

IOUT = 100 mA

Unstable Operation

Stable Operation

VIN = 2.8 V, VOUT = 1.8 V

CIN = 1 mF (MLCC)

COUT = 1 mF (MLCC)

VEN

IINPUT

VOUT

1 V/div

500 mV/div1 V/div

200 mA/div

VIN = 2.8 V, VOUT = 1.8 V

CIN = 1 mF (MLCC)

COUT = 1 mF (MLCC)

VEN

IINPUT

VOUT

NCP160

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TYPICAL CHARACTERISTICS

Figure 40. Line Transient Response −

VOUT = 1.8 V Figure 41. Line Transient Response −

VOUT = 3.3 V

20 ms/div 20 ms/div

Figure 42. Line Transient Response −

VOUT = 5.14 V Figure 43. Turn−on/off − Slow Rising VIN

20 ms/div 4 ms/div

Figure 44. Load Transient Response −

1 mA to 250 mA − VOUT = 1.8 V Figure 45. Load Transient Response −

250 mA to 1 mA − VOUT = 1.8 V

4 ms/div 20 ms/div

500 mV/div

VOUT = 1.8 V, IOUT = 10 mA

CIN = 1 mF (MLCC)

COUT = 1 mF (MLCC)

VIN

3.3 V

VOUT

10 mV/div

2.3 V

500 mV/div10 mV/div

VOUT = 3.3 V, IOUT = 10 mA

CIN = 1 mF (MLCC)

COUT = 1 mF (MLCC)

4.8 V

3.8 V

1 V/div100 mA/div50 mV/div

200 mV/div

VOUT = 5.14 V, IOUT = 10 mA

CIN = 1 mF (MLCC)

COUT = 1 mF (MLCC)

VIN

5.5 V

VOUT

10 mV/div

5.3 V

VOUT = 2.8 V, CIN = 1 mF (MLCC),

IOUT = 10 mA, COUT = 1 mF (MLCC)

VIN

VOUT

100 mA/div50 mV/div

VIN = 2.8 V, VOUT = 1.8 V

CIN = 1 mF (MLCC)

COUT = 1 mF (MLCC)

IOUT

VOUT

tRISE = 1 ms

VIN = 2.8 V, VOUT = 1.8 V

CIN = 1 mF (MLCC)

COUT = 1 mF (MLCC)

IOUT

VOUT

tFALL = 1 ms

VIN

VOUT

NCP160

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TYPICAL CHARACTERISTICS

Figure 46. Load Transient Response −

1 mA to 250 mA − VOUT = 3.3 V Figure 47. Load Transient Response −

250 mA to 1 mA − VOUT = 3.3 V

4 ms/div 20 ms/div

Figure 48. Load Transient Response −

1 mA to 250 mA − VOUT = 5.14 V Figure 49. Load Transient Response −

250 mA to 1 mA − VOUT = 5.14 V

4 ms/div 20 ms/div

Figure 50. Short Circuit and Thermal

Shutdown Figure 51. Enable Turn−off

10 ms/div 400 ms/div

100 mA/div50 mV/div

VIN = 4.3 V, VOUT = 3.3 V

CIN = 1 mF (MLCC)

COUT = 1 mF (MLCC)

IOUT

VOUT

tRISE = 1 ms

100 mA/div50 mV/div

VIN = 4.3 V, VOUT = 3.3 V

CIN = 1 mF (MLCC)

COUT = 1 mF (MLCC)

IOUT

VOUT

tFALL = 1 ms

100 mA/div50 mV/div

VIN = 5.5 V, VOUT = 5.14 V

CIN = 1 mF (MLCC)

COUT = 1 mF (MLCC)

IOUT

VOUT

tFALL = 1 ms

100 mA/div50 mV/div

VIN = 5.5 V, VOUT = 5.14 V

CIN = 1 mF (MLCC)

COUT = 1 mF (MLCC)

IOUT

VOUT

tRISE = 1 ms

500 mV/div1 V/div

VIN = 3.8 V

VOUT = 2.8 V

CIN = 1 mF (MLCC)

VEN

VOUT

COUT = 1 mF

COUT = 4.7 mF

500 mA/div1 V/div

IOUT

VOUT

Short Circuit Event

Overheating

Thermal Shutdown

TSD Cycling

VIN = 5.5 V, VOUT = 3.3 V

CIN = 1 mF (MLCC)

COUT = 1 mF (MLCC)

NCP160

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APPLICATIONS INFORMATION

General

The NCP160 is an ultra−low noise 250 mA low dropout

regulator designed to meet the requirements of RF

applications and high performance analog circuits. The

NCP160 device provides very high PSRR and excellent

dynamic response. In connection with low quiescent current

this device is well suitable for battery powered application

such as cell phones, tablets and other. The NCP160 is fully

protected i n case of current overload, output short circuit and

overheating.

Input Capacitor Selection (CIN)

Input capacitor connected as close as possible is necessary

for ensure device stability. The X7R or X5R capacitor

should be used for reliable performance over temperature

range. The value of the input capacitor should be 1 mF or

greater to ensure the best dynamic performance. This

capacitor will provide a low impedance path for unwanted

AC signals or noise modulated onto constant input voltage.

There is no requirement for the ESR of the input capacitor

but it is recommended to use ceramic capacitors for their low

ESR and ESL. A good input capacitor will limit the

influence of input trace inductance and source resistance

during sudden load current changes.

Output Decoupling (COUT)

The NCP160 requires an output capacitor connected as

close as possible to the output pin of the regulator. The

recommended capacitor value is 1 mF and X7R or X5R

dielectric due to its low capacitance variations over the

specified temperature range. The NCP160 is designed to

remain stable with minimum ef fective capacitance of 0.7 mF

to account for changes with temperature, DC bias and

package size. Especially for small package size capacitors

such a s 0201 the ef fective capacitance drops rapidly with the

applied DC bias. Please refer Figure 52.

Figure 52. Capacity vs DC Bias Voltage

There is no requirement for the minimum value of

Equivalent Series Resistance (ESR) for the COUT but the

maximum value of ESR should be less than 2 W. Larger

output capacitors and lower ESR could improve the load

transient response or high frequency PSRR. It is not

recommended to use tantalum capacitors on the output due

to their large ESR. The equivalent series resistance of

tantalum capacitors is also strongly dependent on the

temperature, increasing at low temperature.

Enable Operation

The NCP160 uses the EN pin to enable/disable its device

and to deactivate/activate the active discharge function.

If the EN pin voltage is <0.4 V the device is guaranteed to

be disabled. The pass transistor is turned−off so that there is

virtually no current flow between the IN and OUT. The

active dischar ge transistor is active so that the output voltage

VOUT is pulled to GND through a 280 Ω resistor. In the

disable state the device consumes as low as typ. 10 nA from

the VIN.

If the EN pin voltage >1.2 V the device is guaranteed to

be enabled. The NCP160 regulates the output voltage and

the active discharge transistor is turned−off.

The EN pin has internal pull−down current source with

typ. value of 200 nA which assures that the device is

turned−off when the EN pin is not connected. In the case

where the EN function isn’t required the EN should be tied

directly to IN.

Output Current Limit

Output Current is internally limited within the IC to a

typical 700 mA. The NCP60 will source this amount of

current measured with a voltage drops on the 90% of the

nominal VOUT. If the Output Voltage is directly shorted to

ground (VOUT = 0 V), the short circuit protection will limit

the output current to 690 mA (typ). The current limit and

short circuit protection will work properly over whole

temperature range and also input voltage range. There is no

limitation for the short circuit duration.

Thermal Shutdown

When the die temperature exceeds the Thermal Shutdown

threshold ( T SD * 160°C typical), Thermal Shutdown event

is detected and the device is disabled. The IC will remain in

this state until the die temperature decreases below the

Thermal Shutdown Reset threshold (TSDU − 140°C typical).

Once the IC temperature falls below the 140°C the LDO is

enabled again. The thermal shutdown feature provides the

protection from a catastrophic device failure due to

accidental overheating. This protection is not intended to be

used as a substitute for proper heat sinking.

Power Dissipation

As power dissipated in the NCP160 increases, it might

become necessary to provide some thermal relief. The

maximum power dissipation supported by the device is

dependent upon board design and layout. Mounting pad

configuration on the PCB, the board material, and the

ambient temperature affect the rate of junction temperature

rise for the part.

NCP160

www.onsemi.com

The maximum power dissipation the NCP160 can handle

is given by:

PD(MAX) +ƪ125oC*TAƫ

qJA (eq. 1)

The power dissipated by the NCP160 for given

application conditions can be calculated from the following

equations:

PD[VIN @IGND )IOUTǒVIN *VOUTǓ(eq. 2)

Figure 53. qJA and PD (MAX) vs. Copper Area (CSP4)

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

100

110

120

130

140

150

160

0 100 200 300 400 500 600 700

PCB COPPER AREA (mm2)

qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (°C/W)

PD(MAX), MAXIMUM POWER DISSIPATION (W)

qJA, 2 oz Cu

qJA, 1 oz Cu

PD(MAX), TA = 25°C, 1 oz Cu

PD(MAX), TA = 25°C, 2 oz Cu

Figure 54. qJA and PD (MAX) vs. Copper Area (XDFN44)

0.3

0.4

0.5

0.6

0.8

0.7

0.9

1.0

150

160

170

180

190

200

210

220

0 100 200 300 400 500 600 700

PCB COPPER AREA (mm2)

qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (°C/W)

PD(MAX), MAXIMUM POWER DISSIPATION (W)

qJA, 2 oz Cu

qJA, 1 oz Cu

PD(MAX), TA = 25°C, 1 oz Cu

PD(MAX), TA = 25°C, 2 oz Cu

NCP160

www.onsemi.com

Reverse Current

The PMOS pass transistor has an inherent body diode

which will be forward biased in the case that VOUT > VIN.

Due to this fact in cases, where the extended reverse current

condition can be anticipated the device may require

additional external protection.

Power Supply Rejection Ratio

The NCP160 features very high Power Supply Rejection

ratio. If desired the PSRR at higher frequencies in the range

100 kHz – 10 MHz can be tuned by the selection of COUT

capacitor and proper PCB layout.

Turn−On Time

The turn−on time is defined as the time period from EN

assertion to the point in which VOUT will reach 98% of its

nominal value. This time is dependent on various

application conditions such as VOUT(NOM), COUT, TA.

PCB Layout Recommendations

To obtain good transient performance and good regulation

characteristics place CIN and COUT capacitors close to the

device pins and make the PCB traces wide. In order to

minimize the solution size, use 0402 or 0201 capacitors with

appropriate capacity. Larger copper area connected to the

pins will also improve the device thermal resistance. The

actual power dissipation can be calculated from the equation

above (Equation 2). Expose pad can be tied to the GND pin

for improvement power dissipation and lower device

temperature.

NCP160

www.onsemi.com

ORDERING INFORMATION

Device

Nominal

Output

Voltage Description Marking Rotation Package Shipping†

NCP160AFCS180T2G 1.8 V

250 mA, Active Discharge

A 0°

WLCSP4

CASE 567KA

(Pb-Free)

5000 /

Tape &

Reel

NCP160AFCS250T2G 2.5 V D 0°

NCP160AFCS270T2G 2.7 V 4 0°

NCP160AFCS280T2G 2.8 V E 0°

NCP160AFCSC280T2G 2.8 V 250 mA, Active Discharge,

Backside Coating E 0°

NCP160AFCS285T2G 2.85 V

250 mA, Active Discharge

F 0°

NCP160AFCS2925T2G 2.925 V T 0°

NCP160AFCS300T2G 3.0 V J 0°

NCP160AFCS320T2G 3.2 V V 0°

NCP160AFCS330T2G 3.3 V K 0°

NCP160AFCS350T2G 3.5 V L 0°

NCP160AFCS370T2G 3.7 V Y 0°

NCP160AFCS450T2G 4.5 V P 0°

NCP160AFCS500T2G 5.0 V R 0°

NCP160AFCS514T2G 5.14 V Q 0°

NCP160BFCS180T2G 1.8 V

250 mA, Non-Active

Discharge

A 90°

NCP160BFCS250T2G 2.5 V D 90°

NCP160BFCS280T2G 2.8 V E 90°

NCP160BFCS285T2G 2.85 V F 90°

NCP160BFCS2925T2G 2.925 V T 90°

NCP160BFCS300T2G 3.0 V J 90°

NCP160BFCS330T2G 3.3 V K 90°

NCP160BFCS350T2G 3.5 V L 90°

NCP160BFCS450T2G 4.5 V P 90°

NCP160BFCS500T2G 5.0 V R 90°

NCP160BFCS514T2G 5.14 V Q 90°

NCP160

www.onsemi.com

ORDERING INFORMATION

NCP160AFCT180T2G 1.8 V

250 mA, Active Discharge

A 0°

WLCSP4

CASE 567JZ

(Pb-Free)

5000 /

Tape &

Reel

NCP160AFCT250T2G 2.5 V D 0°

NCP160AFCT270T2G 2.7 V T 0°

NCP160AFCT280T2G 2.8 V E 0°

NCP160AFCT285T2G 2.85 V F 0°

NCP160AFCT300T2G 3.0 V J 0°

NCP160AFCT330T2G 3.3 V K 0°

NCP160AFCTC330T2G 3.3 V 250 mA, Active Discharge,

Backside Coating K 0°

NCP160AFCT350T2G 3.5 V

250 mA, Active Discharge

L 0°

NCP160AFCT450T2G 4.5 V P 0°

NCP160AFCT500T2G 5.0 V R 0°

NCP160AFCT514T2G 5.14 V Q 0°

NCP160AFCTC180T2G 1.8 V 250 mA, Active Discharge,

Backside Coating A 0°

NCP160BFCT180T2G 1.8 V

250 mA, Non-Active

Discharge

A 90°

NCP160BFCT210T2G 2.1 V T 90°

NCP160BFCT250T2G 2.5 V D 90°

NCP160BFCT280T2G 2.8 V E 90°

NCP160BFCT285T2G 2.85 V F 90°

NCP160BFCT300T2G 3.0 V J 90°

NCP160BFCT330T2G 3.3 V K 90°

NCP160BFCT350T2G 3.5 V L 90°

NCP160BFCT450T2G 4.5 V P 90°

NCP160BFCT500T2G 5.0 V R 90°

NCP160BFCT514T2G 5.14 V Q 90°

NCP160

www.onsemi.com

ORDERING INFORMATION

Device Nominal Output Voltage Description Marking Package Shipping

NCP160AMX180TBG 1.8 V

250 mA, Active Discharge

XDFN4

(Pb-Free)

3000 /

Tape &

Reel

NCP160AMX1825TBG 1.825 V D7

NCP160AMX250TBG 2.5 V DG

NCP160AMX270TBG 2.7 V D6

NCP160AMX275TBG 2.75 V D2

NCP160AMX280TBG 2.8 V DH

NCP160AMX285TBG 2.85 V DJ

NCP160AMX290TBG 2.9 V D4

NCP160AMX300TBG 3.0 V DK

NCP160AMX320TBG 3.2 V DY

NCP160AMX310TBG 3.1 V D3

NCP160AMX330TBG 3.3 V DA

NCP160AMX350TBG 3.5 V DL

NCP160AMX450TBG 4.5 V DM

NCP160AMX500TBG 5.0 V DW

NCP160AMX514TBG 5.14 V DC

NCP160BMX180TBG 1.8 V

250 mA, Non-Active Discharge

NCP160BMX1825TBG 1.825 V E7

NCP160BMX250TBG 2.5 V EG

NCP160BMX275TBG 2.75 V E2

NCP160BMX280TBG 2.8 V EH

NCP160BMX285TBG 2.85 V EJ

NCP160BMX300TBG 3.0 V EK

NCP160BMX330TBG 3.3 V EA

NCP160BMX350TBG 3.5 V EL

NCP160BMX450TBG 4.5 V EM

NCP160BMX500TBG 5.0 V EW

NCP160BMX514TBG 5.14 V EC

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

NCP160

www.onsemi.com

PACKAGE DIMENSIONS

WLCSP4, 0.64x0.64

CASE 567JZ

ISSUE A

ÈÈ

SEATING

PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. COPLANARITY APPLIES TO SPHERICAL

CROWNS OF SOLDER BALLS.

DIM

AMIN NOM

−−−

MILLIMETERS

b0.195 0.210

e0.35 BSC

−−−

PIN A1

REFERENCE

A0.03 BC

0.05 C

4X b

0.05 C

0.04 0.06

TOP VIEW

SIDE VIEW

BOTTOM VIEW

NOTE 3

A2 0.23 REF

PITCH 0.20

DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

0.35 0.35

RECOMMENDED

A1 PACKAGE

OUTLINE

PITCH

MAX

0.610 0.640

0.225

0.33

0.08

0.670

NCP160

www.onsemi.com

PACKAGE DIMENSIONS

WLCSP4, 0.64x0.64

CASE 567KA

ISSUE A

SEATING

PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. COPLANARITY APPLIES TO SPHERICAL

CROWNS OF SOLDER BALLS.

DIM

AMIN NOM

0.35

MILLIMETERS

b0.185 0.200

e0.35 BSC

0.40

PIN A1

REFERENCE

A0.05 BC

0.03 C

0.05 C

4X b

0.05 C

0.14 0.16

TOP VIEW

SIDE VIEW

BOTTOM VIEW

NOTE 3

A2 0.25 REF

PITCH 0.20

DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

0.35 0.35

RECOMMENDED

A1 PACKAGE

OUTLINE

PITCH

MAX

0.610 0.640

0.215

0.45

0.18

0.670

NCP160

www.onsemi.com

PACKAGE DIMENSIONS

XDFN4 1.0x1.0, 0.65P

CASE 711AJ

ISSUE A

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b APPLIES TO PLATED TERMINAL

AND IS MEASURED BETWEEN 0.15 AND

0.20 mm FROM THE TERMINAL TIPS.

4. COPLANARITY APPLIES TO THE EXPOSED

PAD AS WELL AS THE TERMINALS.

ÉÉ

BOTTOM VIEW

NOTE 3

2X 0.05 C

PIN ONE

REFERENCE

TOP VIEW

2X 0.05 C

(A3)

0.05 C

CSEATING

PLANE

SIDE VIEW

DIM MIN MAX

MILLIMETERS

A0.33 0.43

A1 0.00 0.05

A3 0.10 REF

b0.15 0.25

D1.00 BSC

D2 0.43 0.53

E1.00 BSC

e0.65 BSC

L0.20 0.30

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

MOUNTING FOOTPRINT*

1.20

0.26

0.24 4X

DIMENSIONS: MILLIMETERS

0.39

RECOMMENDED

PACKAGE

OUTLINE

NOTE 4

e/2

455

0.05 BC

0.65

PITCH

DET AIL A

b2 0.02 0.12

L2 0.07 0.17

0.52

0.11

L24X

DETAIL A

b24X

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Phone: 421 33 790 2910

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ON Semiconductor:

NCP160BFCS330T2G NCP160BFCS500T2G NCP160BFCS514T2G NCP160BFCT330T2G NCP160BFCT500T2G

NCP160BFCT514T2G NCP160BFCS300T2G NCP160BFCT450T2G NCP160BFCT300T2G NCP160BFCT180T2G

NCP160BFCS180T2G NCP160BFCS285T2G NCP160BFCS450T2G NCP160BFCT280T2G NCP160BFCT350T2G

NCP160BFCS350T2G NCP160BFCT285T2G NCP160BFCS280T2G NCP160BFCS250T2G NCP160BFCT250T2G

NCP160BMX1825TBG NCP160BMX275TBG NCP160BFCS2925T2G NCP160BMX500TBG NCP160BMX330TBG

NCP160BMX450TBG NCP160BMX350TBG NCP160BMX250TBG NCP160BMX300TBG NCP160BMX180TBG

NCP160BMX514TBG NCP160BMX285TBG NCP160BFCT210T2G NCP160BMX280TBG