IRAMS06UP60A
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Inverter Section Switching Characteristics @ TJ = 25°C
Thermal Resistance
Inverter Section Electrical Characteristics @ TJ = 25°C
Symbol Parameter Min Typ Max Units
Eon Turn-On Switching Loss --- 130 235
Eoff Turn-Off Switching Loss --- 65 120
Etot Total Switching Loss --- 195 355 TJ=25°C
Eon Turn-on Swtiching Loss --- 200 345 TJ=150°C
Eoff Turn-off Switching Loss --- 90 150
Etot Total Switching Loss --- 290 495
Erec Diode Reverse Recovery
energy --- 50 110 µJ
trr Diode Reverse Recovery time --- 150 200 ns
RBSOA Reverse Bias Safe Operating
Area
SCSOA Short Circuit Safe Operating
Area 10 --- --- µsTJ=150°C, V P=600V,
V+=360V,
VDD=+15V to 0V See CT2
µJ
µJ
TJ=150°C, V + =400V VDD=15V,
IF=3A, L=1mH
FULL SQUARE TJ=150°C, IC=3A, V P=600V
V+=480V, VDD=+15V to 0V
See CT3
Conditions
IC=3A, V +=400V
VDD=15V, L=1mH
See CT1
Energy losses include "tail" and
diode reverse recovery
Symbol Parameter Min Typ Max Units Conditions
Rth(J-C)
Junction to case thermal
resistance, each IGBT under
inverter operation. --- --- 6.5 °C/W
Rth(J-C)
Junction to case thermal
resistance, each Diode under
inverter operation. --- --- 9°C/W
Rth(C-S) Thermal Resistance case to
sink --- 0.1 --- °C/W
Heatsink compound thermal
conductivity - 1W/mK
Symbol Parameter Min Typ Max Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown
Voltage 600 --- --- V VIN=5V, IC=250µA
∆V(BR)CES / ∆TTemperature Coeff. Of
Breakdown Voltage --- 0.3 --- V/°C VIN=5V, IC=1.0mA
(25°C - 150°C)
--- 1.9 2.4 IC=3A, V DD=15V
--- 2.2 2.6 IC=3A, V DD=15V, TJ=150°C
--- 15 45 VIN=5V, V+=600V
--- 60 170 VIN=5V, V+=600V, TJ=150°C
Ilk_module Zero Gate Voltage Phase-to-
phase Current -- -- 50 µAVIN=5V, V+=600V
--- 1.45 1.85 IC=3A
--- 1.25 1.65 IC=3A, TJ=150°C
V
µA
V
VCE(ON)
ICES
VFM
Collector-to-Emitter Saturation
Voltage
Zero Gate Voltage Collector-to-
Emitter Current
Diode Forward Voltage Drop