ON Semiconductor NPN 2N3055A Complementary Silicon High-Power Transistors MJ15015 * PNP MJ15016 * . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055. *ON Semiconductor Preferred Device * Current-Gain -- Bandwidth-Product @ IC = 1.0 Adc * fT = 0.8 MHz (Min) - NPN = 2.2 MHz (Min) - PNP Safe Operating Area -- Rated to 60 V and 120 V, Respectively IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIII IIIII IIII IIII III IIIIIII IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIII IIII III IIIIIII IIIIIIIIIII IIIII IIII IIII III IIIIIII IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIII IIIII IIII IIII III *MAXIMUM RATINGS Symbol 2N3055A MJ15015 MJ15016 Unit Collector-Emitter Voltage VCEO 60 120 Vdc Collector-Base Voltage VCBO 100 200 Vdc Collector-Emitter Voltage Base Reversed Biased VCEV 100 200 Vdc Emitter-Base Voltage VEBO 7.0 Vdc Collector Current -- Continuous IC 15 Adc Base Current IB 7.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD Rating Operating and Storage Junction Temperature Range TJ, Tstg 115 0.65 180 1.03 -65 to +200 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS CASE 1-07 TO-204AA (TO-3) Watts W/C C THERMAL CHARACTERISTICS Characteristic Symbol Max Max Unit RJC 1.52 0.98 C/W Thermal Resistance, Junction to Case *Indicates JEDEC Registered Data. (2N3055A) Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 4 1 Publication Order Number: 2N3055A/D PD(AV), AVERAGE POWER DISSIPATION (W) 2N3055A MJ15015 MJ15016 200 150 MJ15015 MJ15016 100 2N3055A 50 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 1. Power Derating http://onsemi.com 2 175 200 2N3055A MJ15015 MJ15016 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIII IIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIII IIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIII IIIIIIIII IIIII IIII IIII IIII ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 60 120 -- -- Vdc -- -- 0.7 0.1 -- -- 5.0 1.0 -- -- 30 6.0 -- -- 5.0 0.2 1.95 3.0 -- -- 10 20 5.0 70 70 -- -- -- -- 1.1 3.0 5.0 OFF CHARACTERISTICS (1) *Collector-Emitter Sustaining Voltage (IC = 200 mAdc, IB = 0) 2N3055A MJ15015, MJ15016 Collector Cutoff Current (VCE = 30 Vdc, VBE(off) = 0 Vdc) (VCE = 60 Vdc, VBE(off) = 0 Vdc) 2N3055A MJ15015, MJ15016 *Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) 2N3055A MJ15015, MJ15016 Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150C) 2N3055A MJ15015, MJ15016 Emitter Cutoff Current (VEB = 7.0 Vdc, IC = 0) 2N3055A MJ15015, MJ15016 IEBO Second Breakdown Collector Current with Base Forward Biased (t = 0.5 s non-repetitive) 2N3055A MJ15015, MJ15016 (VCE = 60 Vdc) IS/b ICEO ICEV mAdc ICEV mAdc mAdc mAdc *SECOND BREAKDOWN Adc *ON CHARACTERISTICS (1) DC Current Gain (IC = 4.0 Adc, VCE = 2.0 Vdc) (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 400 mAdc) (IC = 10 Adc, IB = 3.3 Adc) (IC = 15 Adc, IB = 7.0 Adc) VCE(sat) Vdc Base-Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) 0.7 1.8 Vdc fT 0.8 2.2 6.0 18 MHz Cob 60 600 pF td -- 0.5 s tr -- 4.0 s ts -- 3.0 s tf -- 6.0 s *DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) 2N3055A, MJ15015 MJ15016 Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) *SWITCHING CHARACTERISTICS (2N3055A only) RESISTIVE LOAD Delay Time Rise Time Storage Time (VCC = 30 Vdc, IC = 4.0 Adc, IB1 = IB2 = 0.4 0 4 Adc, Adc Duty y Cycle y 2% tp = 25 s Fall Time (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. *Indicates JEDEC Registered Data. (2N3055A) http://onsemi.com 3 2N3055A MJ15015 MJ15016 TJ = 150C 100 70 50 hFE , DC CURRENT GAIN VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 -55C 30 20 25C VCE = 4.0 V 10 7 5 3 2 0.3 0.5 0.7 1 2 3 5 IC, COLLECTOR CURRENT (AMP) 0.2 7 10 15 2.8 TJ = 25C 2.4 2 IC = 1 A 1.6 0.8 0.4 0 0.005 0.01 0.02 BANDWIDTH PRODUCT (MHz) 2 1.5 VBE(on) @ VCE = 4 V 0.5 0 f, T CURRENT-GAIN VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 1 2 5 10 MJ15016 5.0 2.0 2N3055A MJ15015 1.0 0.1 0.2 0.3 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMPS) Figure 4. "On" Voltages Figure 5. Current-Gain -- Bandwidth Product 10 7 5 VCC +30 V 7.5 25 s +13 V 3 t, TIME (s) V, VOLTAGE (VOLTS) 2.5 1 0.05 0.1 0.2 0.5 IB, BASE CURRENT (AMP) Figure 3. Collector Saturation Region TC = 25C 3 8A 1.2 Figure 2. DC Current Gain 3.5 4A SCOPE 30 0 tr, tf 10 ns DUTY CYCLE = 1.0% 2 tr 1 0.7 0.5 0.3 1N6073 -11 V VCC = 30 V IC/IB = 10 TJ = 25C 0.2 -5 V 0.1 Figure 6. Switching Times Test Circuit (Circuit shown is for NPN) td 0.2 0.3 5 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) Figure 7. Turn-On Time http://onsemi.com 4 7 10 15 10 7 5 400 3 200 TJ = 25C C, CAPACITANCE (pF) t, TIME (s) 2N3055A MJ15015 MJ15016 ts 2 tf 0.1 0.7 0.5 0.3 0.2 0.1 VCC = 30 IC/IB = 10 IB1 = IB2 TJ = 25C 0.2 100 50 Cob 30 2 0.5 0.7 1 3 5 IC, COLLECTOR CURRENT (AMPS) 0.3 2N3055A MJ15015 MJ15016 Cib 7 10 20 1.0 15 2.0 5.0 10 20 50 100 200 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Turn-Off Times 500 1000 Figure 9. Capacitances COLLECTOR CUT-OFF REGION NPN 1000 VCE = 30 V 1000 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 10,000 PNP 100 TJ = 150C 10 100C 1.0 IC = ICES REVERSE 0.1 0.01 +0.2 FORWARD 25C +0.1 0 -0.1 -0.2 -0.3 -0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) VCE = 30 V 100 10 TJ = 150C 1.0 100C IC = ICES 0.1 REVERSE 0.01 25C 0.001 -0.2 -0.5 Figure 10. 2N3055A, MJ15015 +0.5 0.1ms 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMPS) 0 +0.1 +0.2 +0.3 +0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 20 30 s 100 s 1 ms 5 1 -0.1 Figure 11. MJ15016 20 2 FORWARD BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 100 ms dc 10 20 60 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 5.0 1.0ms 2.0 1.0 0.5 0.2 100 BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 15 Figure 12. Forward Bias Safe Operating Area 2N3055A 100ms dc 20 30 60 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Forward Bias Safe Operating Area MJ15015, MJ15016 http://onsemi.com 5 120 2N3055A MJ15015 MJ15016 The data of Figures 12 and 13 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe Operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. http://onsemi.com 6 2N3055A MJ15015 MJ15016 PACKAGE DIMENSIONS CASE 1-07 TO-204AA (TO-3) ISSUE Z A N C -T- E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y M DIM A B C D E G H K L N Q U V -Y- L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 -Q- 0.13 (0.005) M STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 7 INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 2N3055A MJ15015 MJ15016 PowerBase is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (Mon-Fri 2:00pm to 7:00pm CET) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (Mon-Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com Toll-Free from Mexico: Dial 01-800-288-2872 for Access - then Dial 866-297-9322 ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 1-303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, UK, Ireland For additional information, please contact your local Sales Representative. http://onsemi.com 8 2N3055A/D