IS61WV20488ALL
IS61/64WV20488BLL
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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 1
Rev. C
06/23/2014
2M x 8 HIGH-SPEED CMOS STATIC RAM June 2014
FEATURES
• High-speed access times:
8, 10, 20 ns
• High-performance,low-powerCMOSprocess
• Multiplecenterpowerandgroundpinsfor
greater noise immunity
• EasymemoryexpansionwithCE and OE op-
tions
• CE power-down
• Fullystaticoperation:noclockorrefresh
required
• TTLcompatibleinputsandoutputs
• Singlepowersupply
Vdd1.65Vto2.2V(IS61WV20488ALL)
speed = 20ns for Vcc = 1.65V to 2.2V
Vdd2.4Vto3.6V(IS61/64WV20488BLL)
speed = 10ns for Vcc = 2.4V to 3.6V
speed = 8ns for Vcc = 3.3V + 5%
• Packagesavailable:
48-ball miniBGA (9mm x 11mm)
–44-pinTSOP(TypeII)
• IndustrialandAutomotiveTemperatureSupport
• Lead-freeavailable
DESCRIPTION
TheISSIIS61WV20488ALL/BLLand
IS64WV20488BLLareveryhigh-speed,low
power,2M-wordby8-bitCMOSstaticRAM.The
IS61WV20488ALL/BLLandIS64WV20488BLLarefab-
ricated using ISSI'shigh-performanceCMOStechnol-
ogy.Thishighlyreliableprocesscoupledwithinnovative
circuit design techniques, yields higher performance
and low power consumption devices.
When CE is HIGH (deselected), the device assumes
a standby mode at which the power dissipation can be
reduceddownwithCMOSinputlevels.
TheIS61WV20488ALL/BLLandIS64WV20488BLL
operate from a single power supply and all inputs are
TTL-compatible.
TheIS61WV20488ALL/BLLandIS64WV20488BLLare
availablein48ballminiBGAand44-pinTSOP(TypeII)
packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A20
CE
OE
WE
2M X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
06/23/2014
IS61WV20488ALL, IS61/64WV20488BLL
PIN DESCRIPTIONS
A0-A20 Address Inputs
CE ChipEnableInput
OE OutputEnableInput
WE WriteEnableInput
I/O0-I/O7DataInput/Output
Vdd Power
GND Ground
NC No Connection
48-pin Mini BGA (M ) (9mm x 11mm) 44-pin TSOP (Type II )
1 2 3 4 5 6
A
B
C
D
E
F
G
H
NC
NC
NC
GND
V
DD
NC
NC
A18
OE
NC
NC
NC
NC
NC
A19
A8
A0
A3
A5
A17
NC
A14
A12
A9
A1
A4
A6
A7
A16
A15
A13
A10
A2
CE
I/O1
I/O3
I/O4
I/O5
WE
A11
NC
I/O0
I/O2
V
DD
GND
I/O6
I/O7
A20
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
A0
A1
A2
A3
A4
CE
I/O0
I/O1
VDD
GND
I/O2
I/O3
WE
A5
A6
A7
A8
A9
NC
NC
NC
NC
A20
A18
A17
A16
A15
OE
I/O7
I/O6
GND
VDD
I/O5
I/O4
A14
A13
A12
A11
A10
A19
NC
NC
44
43
42
41
PIN CONFIGURATION
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 3
Rev. C
06/23/2014
IS61WV20488ALL, IS61/64WV20488BLL
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter Value Unit
Vterm TerminalVoltagewithRespecttoGND –0.5toVdd + 0.5 V
Vdd VddRelatestoGND –0.3to4.0 V
tstg StorageTemperature –65to+150 °C
Pt PowerDissipation 1.0 W
Notes:
1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamageto
thedevice.Thisisastressratingonlyandfunctionaloperationofthedeviceattheseoranyotherconditions
abovethoseindicatedintheoperationalsectionsofthisspecicationisnotimplied.Exposuretoabsolute
maximum rating conditions for extended periods may affect reliability.
TRUTH TABLE
Mode WE CE OE I/O Operation VDD Current
NotSelected X H X High-Z Isb1, Isb2
(Power-down)
OutputDisabledH L H High-Z Icc
Read H L L dout Icc
Write L L X dIn Icc
CAPACITANCE(1,2)
Symbol Parameter Conditions Max. Unit
cIn Input Capacitance VIn = 0V 6 pF
cI/o Input/OutputCapacitance Vout = 0V 8 pF
Notes:
1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters.
2. Testconditions:T
a = 25°c, f=1MHz,Vdd = 3.3V.
4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
06/23/2014
IS61WV20488ALL, IS61/64WV20488BLL
OPERATING RANGE (VDD) (IS61WV20488BLL)(1)
Range Ambient Temperature VDD (8 nS) VDD (10 nS)
Commercial 0°Cto+70°C 3.3V+ 5% 2.4V-3.6V
Industrial –40°Cto+85°C 3.3V+ 5% 2.4V-3.6V
Note:
1. When operated in the range of 2.4V-3.6V, the device meets 10ns. When operated in the range of
3.3V + 5%, the device meets 8ns.
OPERATING RANGE (VDD) (IS64WV20488BLL)
Range Ambient Temperature VDD (10 nS)
Automotive –40°Cto+125°C 2.4V-3.6V
OPERATING RANGE (VDD) (IS61WV20488ALL)
Range Ambient Temperature VDD (20 nS)
Commercial 0°Cto+70°C 1.65V-2.2V
Industrial –40°Cto+85°C 1.65V-2.2V
Automotive –40°Cto+125°C 1.65V-2.2V
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 5
Rev. C
06/23/2014
IS61WV20488ALL, IS61/64WV20488BLL
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
VDD = 2.4V-3.6V
Symbol Parameter Test Conditions Min. Max. Unit
Voh OutputHIGHVoltage Vdd = Min.,Ioh = –1.0 mA 1.8 V
Vol OutputLOWVoltage Vdd = Min.,Iol = 1.0 mA 0.4 V
VIh Input HIGH Voltage 2.0 Vdd + 0.3 V
VIl InputLOWVoltage(1) –0.3 0.8 V
IlI InputLeakage GND VIn Vdd –1 1 µA
Ilo OutputLeakage GND Vout Vdd, OutputsDisabled –1 1 µA
Note:
1. VIl (min.) = –0.3VDC;VIl (min.) = –2.0V AC (pulse width 2.0 ns). Not 100% tested.
VIh (max.) = Vdd + 0.3V dc; VIh (max.) = Vdd + 2.0V ac (pulse width 2.0 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
VDD = 3.3V + 5%
Symbol Parameter Test Conditions Min. Max. Unit
Voh OutputHIGHVoltage Vdd = Min.,Ioh = –4.0 mA 2.4 V
Vol OutputLOWVoltage Vdd = Min.,Iol = 8.0 mA 0.4 V
VIh Input HIGH Voltage 2 Vdd + 0.3 V
VIl InputLOWVoltage(1) –0.3 0.8 V
IlI InputLeakage GND VIn Vdd –1 1 µA
Ilo OutputLeakage GND Vout Vdd, OutputsDisabled –1 1 µA
Note:
1. VIl (min.) = –0.3VDC;VIl (min.) = –2.0V AC (pulse width 2.0 ns). Not 100% tested.
VIh (max.) = Vdd + 0.3V dc; VIh (max.) = Vdd + 2.0V ac (pulse width 2.0 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
VDD = 1.65V-2.2V
Symbol Parameter Test Conditions VDD Min. Max. Unit
Voh OutputHIGHVoltage Ioh = -0.1 mA 1.65-2.2V 1.4 V
Vol OutputLOWVoltage Iol = 0.1 mA 1.65-2.2V 0.2 V
VIh Input HIGH Voltage 1.65-2.2V 1.4 Vdd + 0.2 V
VIl(1) InputLOWVoltage 1.65-2.2V –0.2 0.4 V
IlI InputLeakage GND VIn Vdd –1 1 µA
Ilo OutputLeakage GND Vout Vdd, OutputsDisabled –1 1 µA
Note:
1. VIl (min.) = –0.3VDC;VIl (min.) = –2.0V AC (pulse width 2.0 ns). Not 100% tested.
VIh (max.) = Vdd + 0.3V dc; VIh (max.) = Vdd + 2.0V ac (pulse width 2.0 ns). Not 100% tested.
6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
06/23/2014
IS61WV20488ALL, IS61/64WV20488BLL
AC TEST LOADS
Figure 1.
319
5 pF
Including
jig and
scope
353
OUTPUT
3.3V
Figure 2.
ZO = 50
1.5V
50
OUTPUT
30 pF
Including
jig and
scope
AC TEST CONDITIONS (HIGH SPEED)
Parameter Unit Unit Unit
(2.4V-3.6V) (3.3V + 5%) (1.65V-2.2V)
InputPulseLevel 0.4VtoVdd-0.3V 0.4V to Vdd-0.3V 0.4V to Vdd-0.2V
InputRiseandFallTimes 1.5ns 1.5ns 1.5ns
InputandOutputTiming Vdd/2 Vdd/2 + 0.05 Vdd/2
andReferenceLevel(VRef)
OutputLoad SeeFigures1and2 SeeFigures1and2 SeeFigures1and2
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 7
Rev. C
06/23/2014
IS61WV20488ALL, IS61/64WV20488BLL
POWER SUPPLY CHARACTERISTICS(1) (OverOperatingRange)
-8 -10 -20
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Unit
Icc VddDynamicOperating Vdd = Max., Com. — 120 — 95 — 90 mA
Supply Current Iout = 0 mA, f = fmax Ind. 125 — 100 — 100
Auto. — 140 — 140
typ.(2) 60
Icc1 Operating Vdd = Max., Com. — 35 — 30 — 30 mA
Supply Current Iout = 0 mA, f = 0 Ind. 35 — 40 — 40
Auto. — — — 60 — 70
Isb1 TTLStandbyCurrent Vdd = Max., Com. 30 30 — 30 mA
(TTLInputs) VIn = VIh or VIl Ind. 35 — 35 35
CE VIh,f=0 Auto. — — — 70 — 70
Isb2 CMOSStandby Vdd = Max., Com. 20 20 15 mA
Current(CMOSInputs) CE Vdd – 0.2V, Ind. 25 25 20
VIn Vdd – 0.2V, or Auto. — — — 70 70
VIn 0.2V
, f = 0 typ.(2) 4
Note:
1. At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2.TypicalvaluesaremeasuredatVdd=3.0V,Ta = 25oC and not 100% tested.
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Rev. C
06/23/2014
IS61WV20488ALL, IS61/64WV20488BLL
READ CYCLE SWITCHING CHARACTERISTICS(1) (OverOperatingRange)
-8 -10
Symbol Parameter Min. Max. Min. Max. Unit
trc ReadCycleTime 8 — 10 — ns
taa AddressAccessTime — 8 — 10 ns
toha OutputHoldTime 2 — 2 — ns
tace CEAccessTime — 8 — 10 ns
tdoe OEAccessTime — 5.5 — 6.5 ns
thzoe(2) OEtoHigh-ZOutput — 3 — 4 ns
tlzoe(2) OEtoLow-ZOutput 0 — 0 — ns
thzce(2 CEtoHigh-ZOutput 0 3 0 4 ns
tlzce(2) CEtoLow-ZOutput 3 — 3 — ns
tPu PowerUpTime 0 — 0 — ns
tPd PowerDownTime — 8 — 10 ns
Notes:
1. Testconditionsassumesignaltransitiontimesof3nsorless,timingreferencelevelsof1.5V,inputpulselevelsof0Vto3.0V
andoutputloadingspeciedinFigure1.
2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 9
Rev. C
06/23/2014
IS61WV20488ALL, IS61/64WV20488BLL
READ CYCLE SWITCHING CHARACTERISTICS(1) (OverOperatingRange)
-20 ns
Symbol Parameter Min. Max. Unit
trc ReadCycleTime 20 — ns
taa AddressAccessTime — 20 ns
toha OutputHoldTime 2.5 — ns
tace CEAccessTime — 20 ns
tdoe OEAccessTime — 8 ns
thzoe(2) OEtoHigh-ZOutput 0 8 ns
tlzoe(2) OEtoLow-ZOutput 0 — ns
thzce(2 CEtoHigh-ZOutput 0 8 ns
tlzce(2) CEtoLow-ZOutput 3 — ns
tPu PowerUpTime 0 — ns
tPd PowerDownTime — 20 ns
Notes:
1. Testconditionsassumesignaltransitiontimesof1.5nsorless,timingreferencelevelsof1.25V,inputpulselevelsof0.4Vto
Vdd-0.3VandoutputloadingspeciedinFigure1.
2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.
3. Not 100% tested.
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Rev. C
06/23/2014
IS61WV20488ALL, IS61/64WV20488BLL
t
RC
t
OHA
t
AA
t
DOE
t
LZOE
t
ACE
t
LZCE
t
HZOE
HIGH-Z DATA VALID
CE_RD2.eps
ADDRESS
OE
CE
D
OUT
t
HZCE
READ CYCLE NO. 2(1,3) (CE and OE Controlled)
Notes:
1. WEisHIGHforaReadCycle.
2. Thedeviceiscontinuouslyselected.OE, CE = VIl.
3. Address is valid prior to or coincident with CELOWtransitions.
AC WAVEFORMS
READ CYCLE NO. 1(1,2) (Address Controlled) (CE = OE = VIl)
DATA VALID
READ1.eps
PREVIOUS DATA VALID
t
AA
t
OHA
t
OHA
t
RC
D
OUT
ADDRESS
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Rev. C
06/23/2014
IS61WV20488ALL, IS61/64WV20488BLL
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (OverOperatingRange)
-8 -10
Symbol Parameter Min. Max. Min. Max. Unit
twc WriteCycleTime 8 — 10 — ns
tsce CEtoWriteEnd 6.5 — 8 — ns
taw AddressSetupTime 6.5 — 8 — ns
toWriteEnd
tha AddressHoldfromWriteEnd 0 — 0 — ns
tsa AddressSetupTime 0 — 0 — ns
tPwe1 WE Pulse Width
(OE = HIGH)
6.5 8 ns
tPwe2 WE Pulse Width (OE=LOW) 8.0 — 10 — ns
tsd DataSetuptoWriteEnd 5 — 6 — ns
thd DataHoldfromWriteEnd 0 — 0 — ns
thzwe(2) WELOWtoHigh-ZOutput — 3.5 — 5 ns
tlzwe(2) WEHIGHtoLow-ZOutput 2 — 2 — ns
Notes:
1. Testconditionsassumesignaltransitiontimesof3nsorless,timingreferencelevelsof1.5V,inputpulselevelsof0Vto3.0V
andoutputloadingspeciedinFigure1.
2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.
3. TheinternalwritetimeisdenedbytheoverlapofCELOWandWELOW.Allsignalsmustbeinvalidstatestoinitiatea
Write,butanyonecangoinactivetoterminatetheWrite.TheDataInputSetupandHoldtimingarereferencedtotherising
or falling edge of the signal that terminates the write. Shaded area product in development
12 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
06/23/2014
IS61WV20488ALL, IS61/64WV20488BLL
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (OverOperatingRange)
-20 ns
Symbol Parameter Min. Max. Unit
twc WriteCycleTime 20 — ns
tsce CEtoWriteEnd 12 — ns
taw AddressSetupTime 12 — ns
toWriteEnd
tha AddressHoldfromWriteEnd 0 — ns
tsa AddressSetupTime 0 — ns
tPwe1 WE Pulse Width (OE = HIGH) 12 ns
tPwe2 WE Pulse Width (OE=LOW) 17 — ns
tsd DataSetuptoWriteEnd 9 — ns
thd DataHoldfromWriteEnd 0 — ns
thzwe(3) WELOWtoHigh-ZOutput — 9 ns
tlzwe(3) WEHIGHtoLow-ZOutput 3 — ns
Notes:
1. Test conditions assume signal transition times of 1.5ns or less, timing reference levels of 1.25V, input
pulse levels of 0.4V to Vdd-0.3VandoutputloadingspeciedinFigure1.
2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%
tested.
3. TheinternalwritetimeisdenedbytheoverlapofCELOWandWELOW.Allsignalsmustbeinvalid
statestoinitiateaWrite,butanyonecangoinactivetoterminatetheWrite.TheDataInputSetupand
Hold timing are referenced to the rising or falling edge of the signal that terminates the write.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 13
Rev. C
06/23/2014
IS61WV20488ALL, IS61/64WV20488BLL
AC WAVEFORMS
WRITE CYCLE NO. 1(1,2) (CE Controlled, OE=HIGHorLOW)
DATA UNDEFINED
t WC
VALID ADDRESS
t SCE
t PWE1
t PWE2
t AW
t HA
HIGH-Z
t HD
t SA
t HZWE
ADDRESS
CE
WE
D
OUT
D
IN DATA
IN
VALID
t LZWE
t SD
CE_WR1.eps
14 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
06/23/2014
IS61WV20488ALL, IS61/64WV20488BLL
Notes:
1. TheinternalwritetimeisdenedbytheoverlapofCELOWandWELOW.AllsignalsmustbeinvalidstatestoinitiateaWrite,
butanyonecangoinactivetoterminatetheWrite.TheDataInputSetupandHoldtimingarereferencedtotherisingorfalling
edge of the signal that terminates the Write.
2. I/OwillassumetheHigh-ZstateifOE > VIh.
AC WAVEFORMS
WRITE CYCLE NO. 2(1,2) (WE Controlled: OEisHIGHDuringWriteCycle)
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 15
Rev. C
06/23/2014
IS61WV20488ALL, IS61/64WV20488BLL
AC WAVEFORMS
WRITE CYCLE NO. 3 (WE Controlled: OEisLOWDuringWriteCycle)
DATA UNDEFINED
t
WC
VALID ADDRESS
LOW
LOW
t
PWE2
t
AW
t
HA
HIGH-Z
t
HD
t
SA
t
HZWE
ADDRESS
CE
WE
DOUT
DIN
OE
DATA
IN
VALID
t
LZWE
t
SD
CE_WR3.eps
16 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
06/23/2014
IS61WV20488ALL, IS61/64WV20488BLL
DATA RETENTION WAVEFORM (CE Controlled)
V
DD
CE V
DD
- 0.2V
t
SDR
t
RDR
V
DR
CE
GND
1.65V
1.4V
Data Retention Mode
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter Test Condition Min. Max. Unit
Vdr VddforDataRetention SeeDataRetentionWaveform 1.2 3.6 V
Idr DataRetentionCurrent Vdd = 1.2V, CE Vdd – 0.2V Ind. 25 mA
Auto. 60
typ.(1) 3
tsdr DataRetentionSetupTime SeeDataRetentionWaveform 0 — ns
trdr RecoveryTime SeeDataRetentionWaveform trc — ns
Note:
1.TypicalvaluesaremeasuredatVdd=3.0V,Ta = 25oC and not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 17
Rev. C
06/23/2014
IS61WV20488ALL, IS61/64WV20488BLL
ORDERING INFORMATION
Industrial Range: -40°C to +85°C
Voltage Range: 2.4V to 3.6V
Speed (ns) Order Part No. Package
10 (81) IS61WV20488BLL-10MI 48miniBGA(9mmx11mm)
IS61WV20488BLL-10MLI 48miniBGA(9mmx11mm),Lead-free
IS61WV20488BLL-10TI TSOP(TypeII)
IS61WV20488BLL-10TLI TSOP(TypeII),Lead-free
Note:
1. Speed = 8ns for Vdd = 3.3V + 5%. Speed = 10ns for Vdd = 2.4V to 3.3V.
Industrial Range: -40°C to +85°C
Voltage Range: 1.65V to 2.2V
Speed (ns) Order Part No. Package
20 IS61WV20488ALL-20MI 48miniBGA(9mmx11mm)
IS61WV20488ALL-20TI TSOP(TypeII)
Speed (ns) Order Part No. Package
10 IS64WV20488BLL-10MA3 48 mini BGA (9mm x 11mm)
IS64WV20488BLL-10MLA3 48miniBGA(9mmx11mm),Lead-free
IS64WV20488BLL-10CTLA3 TSOP(TypeII),CopperLeadframe,Leadfree
IS64WV20488BLL-10CTA3 TSOP(TypeII),CopperLeadframe
Automotive Range: -40°C to +125°C
Voltage Range: 2.4V to 3.6V
18 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
06/23/2014
IS61WV20488ALL, IS61/64WV20488BLL
2. Reference document : JEDEC MO-207
1. CONTROLLING DIMENSION : MM .
NOTE :
08/21/2008
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 19
Rev. C
06/23/2014
IS61WV20488ALL, IS61/64WV20488BLL
2. DIMENSION D AND E1 DO NOT INCLUDE MOLD PROTRUSION.
3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION/INTRUSION.
1. CONTROLLING DIMENSION : MM
NOTE :
06/04/2008
Package Outline