MUR420 Vishay General Semiconductor Ultrafast Plastic Rectifier FEATURES * Glass passivated chip junction * Ultrafast reverse recovery time * Low forward voltage drop * Low leakage current * Low switching losses, high efficiency * High forward surge capability * Solder dip 275 C max. 10 s, per JESD 22-B106 DO-201AD * Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 4.0 A VRRM 200 V IFSM 150 A trr 25 ns VF 0.710 V TJ max. 175 C For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. MECHANICAL DATA Case: DO-201AD Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Maximum repetitive peak reverse voltage VRRM 200 V Working peak reverse voltage VRWM 200 V Maximum DC blocking voltage VDC 200 V Maximum average forward rectified current at TA = 80 C (fig. 1) IF(AV) 4.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A TJ, TSTG - 65 to + 175 C Operating junction and storage temperature range Document Number: 88685 Revision: 22-Oct-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 MUR420 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS VALUE TJ = 150 C 3.0 A Maximum instantaneous forward voltage SYMBOL 0.710 VF TJ = 25 C 4.0 A (1) V 0.875 0.890 TJ = 25 C Maximum instantaneous reverse current at rated DC blocking voltage UNIT 5.0 IR (1) TJ = 150 C A 150 Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 25 ns Maximum reverse recovery time IF = 1.0 A, dI/dt = 50 A/s, VR = 30 V, Irr = 10 % IRM trr 35 ns Maximum forward recovery time IF = 1.0 A, dI/dt = 100 A/s, recovery to 1.0 V tfr 25 ns Note (1) Pulse test: t = 300 s pulse, duty cycle 2 % p THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT RJA (1) 28 C/W Typical thermal resistance junction to ambient Note (1) Lead length = 1/2" on P.C.B. with 1.2" x 1.2" (30.5 mm x 30.5 mm) copper surface ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE MUR420-E3/54 1.138 54 1400 13" diameter paper tape and reel MUR420-E3/73 1.138 73 1000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 150 Peak Forward Surge Current (A) Average Forward Current (A) 8.0 6.0 4.0 2.0 125 100 75 50 25 0 0 0 25 50 75 100 125 150 175 1 10 100 Ambient Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 88685 Revision: 22-Oct-09 MUR420 Vishay General Semiconductor 1000 TJ = 175 C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TJ = 100 C 1 TJ = 25 C 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 100 10 1 0.1 1.4 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance Instantaneous Reverse Leakage Current (A) 1000 TJ = 175 C 100 10 TJ = 100 C 1 0.1 TJ = 25 C 0.01 0.001 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Document Number: 88685 Revision: 22-Oct-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000