BA157...BA159 FAST SILICON RECTIFIERS FEATURES * Low forward voltage | 36 * High current capability wa al MIN * Low leakage current = High surge capability | MAX * Low cost Cathode , Mark 26 MIN 0.86 < VOLTAGE RANCE 400 to 1000 Volts CURRENT 1.0 Amperes Dimensions in mm Absolute Maximum Ratings (T,= 25 C) Symbol Value Unit Repetitive Peak Reverse Voltage BA157 Verm 400 V BA158 Verna 600 V BA159 Vevan 1000 V Average Rectified Current at T,_, = 50 C I, 1? A Surge Frward Current, Half Cycle 50Hz, starting from T, = 25 C loom 35 A Junction Temperature T, 125 C Operating and Storage Temperature Range Tomb? Is -65 to + 125 C 1 Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. )BA157...BA159 FAST SILICON RECTIFIERS Characteristics Symbol Min. Typ. Max. Unit Forward Voltage Vv, - - 1.3 V atl-=1A,T,=25 C Leakage Current la - - 5 pA at Vaan lamp = 29 C Capacitance -atf=1 MHz, V,=4V BA157 Co - 15 - pF V,=4V BA158 C., - 15 - pF V,=4V BA159 Cu - 15 - pF Reverse Recovery Time |, = 10 mA, |, =10mA BA157 + - - 300 ns lag = 1.0 mA BA158 7 - - 300 ns BA159 7 - - 500 ns .=0.5A,1,=1A BA157 1 - - 150 ns lag = 0.25 A BA158 7 - - 150 ns BA159 7 - - 250 ns Thermal Resistance Rina - - 25" K/W Junction to Ambient Air ) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. ) HeBA157...BA159 FAST SILICON RECTIFIERS INSTANTANEOUS FORWARD CURRENT AVERAGE FORWARD CURRENT AMPERES AMPERES FIG. 1 - FORWARD CURRENT DERATING CURVE 1.0 08 \ 0.6 \ \ 0.4 VN 0.2 RESISTIVE OR INDUCTIVE LOAD 0.375" (9.5mm) LEAD LENGTH i i L 0 25 50 75 100 125 150 AMBIENT TEMPERATURE, C FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 10 Ty=25C PULSE WIDTH=300ys 1% DUTY CYCLE 1 0.1 0.0 1 04 06 08 10 12 14 16 18 2.0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 175 PEAK FORWARD CURRENT AMPERES 35 25 = on SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. ) FIG, 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 1 7 POR PEE Ty=55C 8.3ms SINGLE HALF NN SINE-WAVE IN, ~ SW ~ be 1 10 100 NUMBER OF CYCLES AT 60HzBA157...BA159 FAST SILICON RECTIFIERS FIG. 4 - TYPICAL REVERSE CHARACTERISTICS FIG. 5 - TYPICAL JUNCTION CAPACITANCE 100 100 ue25C f=1.0 MHz Vsig=50mVp-p 10 10 0.1 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES JUNCTION CAPACITANCE, pF 0.01 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE, % 0.1 1 10 100 REVERSE VOLTAGE, VOLTS FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 TRANSIENT THERMAL IMPEDANCE, C/W 0.01 0.1 1 10 100 t, PULSE DURATION, sec. SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. )