HF-VHF HYPERABRUPT JUNCTION VARACTOR DIODES DESCRIPTION RATINGS lon-implanted, highly reproducible hyperabrupt junction Minimum Voltage Breakdown: 22 V @ 10 pA diodes which allow octave tuning of LC tanks up to 500 MHz or, with a reduced 1.5 to 1 frequency ratio, straight- Maximum Leakage Current: See Table Below line-frequency tuning over a 3 to 8 volt tuning range are Junction Operating Temp.: -5BC to +125C offered in this family which, with the UHF hyperabrupt 5 junction diodes, give the designer a full capacitance Storage Temp.: 65C to + 200C range of 10 to 500 pF at 4 volts of bias. Ultra-high OQ and excellent large signal handling capabilities, along with a 2 to 1 capacitance ratio, is obtained by tuning from 9 to 20 volts of reverse bias. Linear, wide-deviation tuning of VCXO/TCXOS and frequency modulators results when these diodes are tuned over a 3 to 8 volt bias range. Closely matched sets of all HF-VHF diodes are available along with A suffix versions having +5% capacitance tolerance at 4 volts of reverse bias. ELECTRICAL SPECIFICATIONS: Ta=25C pIODE CAPACITANCE F c a Ver 1 MODEL awe Or TUNING RATIO yp=4 Wie (vee) ie 2 NUMBER chet Mie f=50 MHz In=10pAde {inAdc) PACKAGE Va=4 Vic Va=8 Vde Vr=20Vde | (V)/ 0 (20V) MIN/TYP MiIN/ TYP VR=20 Vdc MIN /TYP/MAX | MIN /TYP/MAX | MIN/TYP/MAX | MIN/ TYP /MAX KV2001 18 /20 / 22 7.5 /8.5/10.5 3.1/3.5/3.9 5.4/6.0/6.6 160 / 220 22/30 15/100 00-7? KV2001A 19/20/21 7.8/8.5/9.2 3.1/3.5 /3.9 5.4/6.0/6.6 160 / 230 22/30 15/100 BO-7 KV2201 45/50/55 18/20/25 7.3/8.0/9.2 5.6/6.3/6.9 125 / 165 22/30 20/100 00-7 KV22014 47.5 /50/52.5 18.4 /20/21.6 7.3/8.0/9.2 5.6/6.3/6.9 125/165 22 / 30 20/ 100 DO-7 KV2301 100/ 140/120 39/45/55 15/17/19 5.9/6.6/7.3 80/110 22/30 30/ 100 DO-7 KV2301A 105/ 110/115 41.5/45/ 48.6 19/17/19 5.9/6.6/7.3 80/110 22/30 30 / 100 DO-7 KV2401 140/ 155/170 55/65/80 22.5/ 25 / 28 58/64/71 | 70/90 22/30 50/500 00-7 KV2401A 147/155 / 163 59.8/65/70.2 22.5/ 25 / 28 5.8/6.4/7.1 70/90 22/30 50/500 00-7 KV2501 180 / 200 / 220 70/85 / 105 29 / 32/36 5.8/6.4/7.1 | 60/80 22/30 70/500 00-7 KV25014 190 / 200/210 78 / 85/92 29/32/36 5.8/6.4/7.1 60 / 80 22/30 70/500 00-7 KV2601 270 / 300 / 330 110/125 / 155 42.5 / 48 /53.5 6.0/6.5 /7.3 40/50 22/30 100 / 1000 DO-14 KV2601A 285 / 300 / 315 115/125 / 135 42.5 / 48 /53.5 6.0/6.5/7.3 40/55 22/30 100 / 1000 DO-14 KV2701 450 / 500 / 550 175/195 / 225 66/75/83 6.0/6.7/7.4 30/40 22/30 150/ 1000 DO-14 KV2701A 475 / 500/525 180 / 195/210 66/75/83 6.0 /6.7/7.4 30/40 22/30 150 / 1000 DO-14 NOTES: 1. +25C 2. OTHER PACKAGES AVAILABLE UPON REQUEST. SOME LIMITATIONS APPLY. CONSULT FACTORY FOR DETAILS. SEMICONDUCTOR OPERATION na rda 75 Technology Drive * Lowell, MA 01851 Tel: 508-442-5600 * Fax: 508-937-3748 ___Microwave-east_ 26 an (B Communications companyHF-VHF HYPERABRUPT JUNCTION VARACTOR DIODES TYPICAL ELECTRICAL CHARACTERISTICS (Ta=25C unless otherwise noted) KV2001 ANO KV2201 THROUGH KV2701 Vp 72 Vde Vde 8 Vde NORMALIZED DIODE CAPACITANCE 60 2 0 2% 80 7 100 125 Ty, JUNCTION TEMPERATURE (C) Cy, DIODE CAPACITANCE (pF) 1 2 3.9456 8 10 20 30 Vp, REVERSE VOLTAGE (VOLTS) TEMPERATURE COEFFICIENT (ppm/C) 0 2 4 6 8 10 120 14 16 18 20 Vp, REVERSE VOLTAGE (VOLTS) narda SEMICONDUCTOR OPERATION ___Microwave-east__ 75 Technology Drive Lowell, MA 01851 Tel: 508-442-5600 * Fax: 508-937-3748HF-VHF HYPERABRUPT JUNCTION VARACTOR DIODES 50 MHz) KV2401 KV2501 KV2601 KV2701 Rg, SERIES RESISTANCE (OHMS) Q, FIGURE OF MERIT (f 2 4 65 8 10 Vr, REVERSE VOLTAGE (VOLTS} Vp REVERSE VOLTAGE (VOLTS) SEMICONDUCTOR OPERATION narda 75 Technology Drive * Lowell, MA 01851 Tel: 508-442-5600 Fax: 508-937-3748 __Microwave-east___ 28 en {B) communications company