ESD108-B1-CSP0201
Bi-directional ESD protection device, 5.5 V, 0.28 pF, 0201
Product description
This Infineon ESD (electrostatic discharge) protection device has a bi-directional and symmetric
I/V characteristic and excellent clamping performance
Feature list
• ESD / transient protection according to:
- IEC61000-4-2 (ESD): ±25 kV (air) / ±25 kV (contact)
- IEC61000-4-4 (EFT): ±2.5 kV / ±50 A (5/50 ns)
- IEC61000-4-5 (Surge): ±2.5 A (8/20 μs)
• Bi-directional maximum working voltage: VWM = ±5.5 V
• Line capacitance: CL = 0.28 pF at f = 1 MHz
• Clamping voltage: Vcl = 20 V at ITLP = 16 A with Rdyn = 0.78 Ω
• Very low leakage current: IL =0.1 nA
• Small form factor SMD size 0201, low profile (0.58 x 0.28 x 0.15 mm³)
Potential applications
• USB 3.x Gen. 1, USB 2.0
• HDMI, DisplayPort
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Device information
C
C
Figure 1 Pin configuration with marking (bottom view)
Table 1 Part information
Product name / Ordering code Package Pin configuration Marking Pieces / Reel
ESD108-B1-CSP0201 / ESD108B1CSP0201XTSA1 WLL-2-1 1 line, bi-directional C 15 k
Please read the Important Notice and Warnings at the end of this document v2.0
www.infineon.com 2020-07-30
Table of contents
Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 Typical characteristic diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Package information WLL-2-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
ESD108-B1-CSP0201
Bi-directional ESD protection device, 5.5 V, 0.28 pF, 0201
Table of contents
2 v2.0
2020-07-30
1 Absolute maximum ratings
Table 2 Absolute maximum ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit Note or test condition
Min. Max.
Working voltage VWM -5.5 +5.5 V
Working current IWM -10 +10 mA Device mounted on PCB
with Rth = 200 K/W
ESD discharge voltage VESD (contact) -25 +25 kV Discharge network:
R = 330 Ω, C = 150 pF 1)
VESD (air) -25 +25
Peak pulse power PPK – 1800 W tp = 100 ns
– 27.5 tp = 8/20 μs waveform 2)
Peak pulse current IPP -2.5 +2.5 A tp = 8/20 μs waveform 2)
Operating temperature Top -55 +125 °C
Storage temperature Tstg -65 +150
Attention:Stresses above the maximum values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may aect device
reliability. Maximum ratings are absolute ratings. Exceeding only one of these values may cause
irreversible damage to the component.
1Based on IEC61000-4-2.
2Based on IEC61000-4-5.
ESD108-B1-CSP0201
Bi-directional ESD protection device, 5.5 V, 0.28 pF, 0201
1 Absolute maximum ratings
3 v2.0
2020-07-30
2 Electrical characteristics
Note: TA = 25°C, unless otherwise specified. Device is electrically symmetrical.
V
or
ITLP
IPP
It
IL
ΔI
ΔV
VWM
Vtr
Vcl IL
It
or
ITLP
IPP
I
VWM Vtr Vcl
Vh
Vh
I
Rdyn =
ΔV
ΔI
Figure 2 I/V characteristic curve
Table 3 I/V characteristic parameters
Symbol Parameter
IhHolding current
ILLeakage current
IPP Peak pulse current, based on IEC61000-4-5
ItTest current
ITLP TLP current
Rdyn Dynamic resistance
Vcl Clamping voltage
VhHolding voltage
VtTest voltage
Vtr Trigger voltage
VWM Maximum working voltage
ESD108-B1-CSP0201
Bi-directional ESD protection device, 5.5 V, 0.28 pF, 0201
2 Electrical characteristics
4 v2.0
2020-07-30
Table 4 DC characteristics
Parameter Symbol Values Unit Note or test condition
Min. Typ. Max.
Trigger voltage 3) Vtr – 9.5 12.5 V
Holding voltage Vh5.5 6.5 9.5 It = 0.5 mA
6.1 7.5 9.0 It = 1 mA
Leakage current IL– 0.1 20 nA VWM = 5.5 V
Table 5 AC characteristics
Parameter Symbol Values Unit Note or test condition
Min. Typ. Max.
Line capacitance CL– 0.28 0.38 pF V = 0 V, f = 1 MHz
– 0.22 0.38 V = 0 V, f = 1 GHz
Series inductance LS– <0.1 – nH Extracted from S-parameters
Table 6 Protection characteristics
Parameter Symbol Values Unit Note or test condition
Min. Typ. Max.
Clamping voltage (TLP) 4) 5) Vcl – 11 – V ITLP = 4 A
– 14.2 – ITLP = 8 A
– 20 27 ITLP = 16 A
– 30.5 41 ITLP = 30 A
Clamping voltage (8/20 µs) 6) – 8.5 12 IPP = 1 A
– 11 18.5 IPP = 2.5 A
Dynamic resistance 4) Rdyn – 0.78 – Ω
3Verified by design.
4TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 0.6 ns, averaging window 30-60 ns.
5Refer to application note AN210 [2]
6tp = 8/20 µs. Stress pulse based on IEC61000-4-5.
ESD108-B1-CSP0201
Bi-directional ESD protection device, 5.5 V, 0.28 pF, 0201
2 Electrical characteristics
5 v2.0
2020-07-30
3 Thermal characteristics
Table 7 Thermal resistance
Parameter Symbol Values Unit Note or Test Condition
Min. Max.
Thermal resistance RthJS – 330 K/W Junction - soldering point
0
2
4
6
8
10
12
14
0 50 100 150
IWM / mA
TS, TA / °C
TA TS
Figure 3 Maximal working current: IWM = f(TS, TA), device mounted on PCB with Rth = 200 K/W
ESD108-B1-CSP0201
Bi-directional ESD protection device, 5.5 V, 0.28 pF, 0201
3 Thermal characteristics
6 v2.0
2020-07-30
4 Typical characteristic diagrams
Note: TA = 25 °C, unless otherwise specified.
10-13
10-12
10-11
10-10
10-9
10-8
10-7
10-6
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
IL / A
Vt / V
Figure 4 Leakage current: IL = f(Vt)
100
150
200
250
300
350
400
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
CL / fF
Vt / V
1 GHz
1 MHz
Figure 5 Line capacitance: CL = f(Vt), f = 1 MHz, 1 GHz
ESD108-B1-CSP0201
Bi-directional ESD protection device, 5.5 V, 0.28 pF, 0201
4 Typical characteristic diagrams
7 v2.0
2020-07-30
-25
0
25
50
75
100
125
150
175
-50 0 50
Scope: 6 GHz, 20 GS/s
100 150 200 250 300 350 400 450
tp / ns
Vcl / V
Vcl-30ns = 20 V
Vcl-peak = 141 V
Figure 6 Clamping voltage (ESD): Vcl = f(tp), 8 kV positive pulse based on IEC61000-4-2
-175
-150
-125
-100
-75
-50
-25
0
25
-50 0 50
Scope: 6 GHz, 20 GS/s
Vcl / V
100 150 200 250 300 350 400 450
tp / ns
Vcl-30ns = -16 V
Vcl-peak = -137 V
Figure 7 Clamping voltage (ESD): Vcl = f(tp), 8 kV negative pulse based on IEC61000-4-2
ESD108-B1-CSP0201
Bi-directional ESD protection device, 5.5 V, 0.28 pF, 0201
4 Typical characteristic diagrams
8 v2.0
2020-07-30
-25
0
25
50
75
100
125
150
175
-50 0 50 100 150 200 250 300 350 400 450
Scope: 6 GHz, 20 GS/s
tp / ns
Vcl / V
Vcl-30ns = 29 V
Vcl-peak = 165 V
Figure 8 Clamping voltage (ESD): Vcl = f(tp), 15 kV positive pulse based on IEC61000-4-2
-175
-150
-125
-100
-75
-50
-25
0
25
-50 0 50
Scope: 6 GHz, 20 GS/s
Vcl / V
100 150 200 250 300 350 400 450
tp / ns
Vcl-peak = -162 V
Vcl-30ns = -27 V
Figure 9 Clamping voltage (ESD): Vcl = f(tp), 15 kV negative pulse based on IEC61000-4-2
ESD108-B1-CSP0201
Bi-directional ESD protection device, 5.5 V, 0.28 pF, 0201
4 Typical characteristic diagrams
9 v2.0
2020-07-30
0
Vcl / V
-30
10 20 30 40 50
ITLP / A
Rdyn = 0.78 Ω
Rdyn = 0.78 Ω
ESD108-B1-CSP0201
Rdyn
Figure 10 Clamping voltage (TLP): ITLP = f(Vcl)
ESD108-B1-CSP0201
Bi-directional ESD protection device, 5.5 V, 0.28 pF, 0201
4 Typical characteristic diagrams
10 v2.0
2020-07-30
Vcl / V
IPP / A
0
Figure 11 Clamping voltage (Surge): IPP = f(Vcl), based on IEC61000-4-5
ESD108-B1-CSP0201
Bi-directional ESD protection device, 5.5 V, 0.28 pF, 0201
4 Typical characteristic diagrams
11 v2.0
2020-07-30
-6
-5
-4
-3
-2
-1
0
0.1 1 10
f / GHz
IL / dB
Figure 12 Insertion loss IL = f(f), measured in a 50 Ω system
ESD108-B1-CSP0201
Bi-directional ESD protection device, 5.5 V, 0.28 pF, 0201
4 Typical characteristic diagrams
12 v2.0
2020-07-30
5 Package information WLL-2-1
Figure 13 WLL-2-1 package
Note: For package information including footprint, packing and assembly recommendation refer to:
https://www.infineon.com/packages/SG-WLL-2-1/
ESD108-B1-CSP0201
Bi-directional ESD protection device, 5.5 V, 0.28 pF, 0201
5 Package information WLL-2-1
13 v2.0
2020-07-30
6 References
[1] Infineon AG - Understanding ESD protection device characteristics
[2] Infineon AG - Application note AN210: Eective ESD Protection Design at System Level Using VF-TLP
Characterization Methodology
7 Revision history
Document
version
Date of
release
Description of changes
v2.0 2020-07-30 • New datasheet layout and values updated.
ESD108-B1-CSP0201
Bi-directional ESD protection device, 5.5 V, 0.28 pF, 0201
6 References
14 v2.0
2020-07-30
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2020-07-30
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2020 Infineon Technologies AG
All Rights Reserved.
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aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-dnd1584021982797
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