1
2
3
4
5
10
9
8
7
6
+ VREF
N/C
N/C
N/C
N/C
N/C
N/C
N/C
N/C
V-
LM185-2.5QML
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SNVS385A –NOVEMBER 2005–REVISED MARCH 2013
Micropower Voltage Reference Diode
Check for Samples: LM185-2.5QML
1FEATURES DESCRIPTION
The LM185-2.5 are micropower 2-terminal band-gap
2• Operating Current of 20 μA to 20 mA voltage regulator diodes. Operating over a 20 μA to
• 0.6ΩDynamic Impedance (A grade) 20 mA current range, they feature exceptionally low
• Low Temperature Coefficient dynamic impedance and good temperature stability.
On-chip trimming is used to provide tight voltage
• Low Voltage Reference—2.5V tolerance. Since the LM185-2.5 band-gap reference
uses only transistors and resistors, low noise and
good long term stability result.
Careful design of the LM185-2.5 has made the device
exceptionally tolerant of capacitive loading, making it
easy to use in almost any reference application. The
wide dynamic operating range allows its use with
widely varying supplies with excellent regulation.
The extremely low power drain of the LM185-2.5
makes it useful for micropower circuitry. This voltage
reference can be used to make portable meters,
regulators or general purpose analog circuitry with
battery life approaching shelf life. Further, the wide
operating current allows it to replace older references
with a tighter tolerance part. For applications requiring
1.2V see LM185-1.2.
Connection Diagram
Figure 1. CLGA Package-Top View Figure 2. PFM Metal Can Package- Bottom View
See Package Number NAC See Package Number NDU
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2005–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
LM185-2.5QML
SNVS385A –NOVEMBER 2005–REVISED MARCH 2013
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Schematic Diagram
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings(1)
Reverse Current 30 mA
Forward Current 10 mA
Operating Temperature Range −55°C ≤TA≤+ 125°C
Storage Temperature −55°C ≤TA≤+ 150°C
Maximum Junction Temperature (TJmax)(2) 150°C
PFM Metal Can 300°C
Lead Temperature (Soldering, 10 sec) Ceramic CLGA 260°C
PFM Metal Can (Still Air) 300°C/W
PFM Metal Can (500LF / Min Air Flow) 139°C/W
θJA Ceramic CLGA (Still Air) 194°C/W
Thermal Resistance Ceramic CLGA (500LF / Min Air Flow) 128°C/W
PFM Metal Can 57°C/W
θJC Ceramic CLGA 23°C/W
PFM Metal Can TBD
Package Weight (Typical) Ceramic CLGA 210 mg
ESD Tolerance (3) 4000V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the
Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may
degrade when the device is not operated under the listed test conditions.
(2) The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature),
θJA (package junction to ambient thermal resistance), and TA(ambient temperature). The maximum allowable power dissipation at any
temperature is PDmax = (TJmax - TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower.
(3) Human body model, 1.5 kΩin series with 100 pF
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SNVS385A –NOVEMBER 2005–REVISED MARCH 2013
Table 1. Quality Conformance Inspection(1)
Subgroup Description Temp °C
1 Static tests at 25
2 Static tests at 125
3 Static tests at -55
4 Dynamic tests at 25
5 Dynamic tests at 125
6 Dynamic tests at -55
7 Functional tests at 25
8A Functional tests at 125
8B Functional tests at -55
9 Switching tests at 25
10 Switching tests at 125
11 Switching tests at -55
12 Settling time at 25
13 Settling time at 125
14 Settling time at -55
(1) Mil-Std-883, Method 5005 - Group A
LM185–2.5 Electrical Characteristics DC Parameters Sub-
Symbol Parameter Conditions Notes Min Max Units groups
VRef Reverse Breakdown Voltage IR= 20µA 2.462 2.538 V 1
IR= 30µA 2.425 2.575 V 2, 3
IR= 1mA 2.462 2.538 V 1
2.425 2.575 V 2, 3
IR= 20mA 2.462 2.538 V 1
2.425 2.575 V 2, 3
ΔVRef /ΔIRReverse Breakdown Voltage 20µA ≤IR≤1mA -1.0 1.0 mV 1
Change with Current 30µA ≤IR≤1mA -1.5 1.5 mV 2, 3
1mA ≤IR≤20mA -10.0 10.0 mV 1
-20.0 20.0 mV 2, 3
VFForward Bias Voltage IF= 2mA -1.0 -0.4 V 1
LM185–2.5 Electrical Characteristics DC Drift Parameters
Delta calculations performed on QMLV devices at group B , subgroup 5, unless otherwise specified on IPI. Sub-
Symbol Parameter Conditions Notes Min Max Units groups
VRef Reverse Breakdown Voltage IR= 20µA -10 10 mV 1
IR= 20mA -10 10 mV 1
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SNVS385A –NOVEMBER 2005–REVISED MARCH 2013
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LM185BY–2.5 Electrical Characteristics DC Parameters Sub-
Symbol Parameter Conditions Notes Min Max Units groups
VRef Reverse Breakdown Voltage IR= 20µA 2.462 2.538 V 1
IR= 30µA 2.425 2.575 V 2, 3
IR= 1mA 2.462 2.538 V 1
2.425 2.575 V 2, 3
IR= 20mA 2.462 2.538 V 1
2.425 2.575 V 2, 3
ΔVRef /ΔIRReverse Breakdown Voltage 20µA ≤IR≤1mA -1.0 1.0 mV 1
Change with Current 30µA ≤IR≤1mA -1.5 1.5 mV 2, 3
1mA ≤IR≤20mA -10.0 10.0 mV 1
-20.0 20.0 mV 2, 3
VFForward Bias Voltage IF= 2mA −1.0 −0.4 V 1
TCTemperature Coefficient (1) 50 PPM/°C 2, 3
(1) The average temperature coefficient is defined as the maximum deviation of reference voltage, at all measured temperatures between
the operating TMin & TMax, divided by (TMax −TMin). The measured temperatures (TMeasured) are −55°C, 25°C, & 125°C or ΔVRef / (TMax −
TMin)
LM185BY–2.5 Electrical Characteristics DC Drift Parameters
Delta calculations performed on QMLV devices at group B , subgroup 5, unless otherwise specified on IPI. Sub-
Symbol Parameter Conditions Notes Min Max Units groups
VRef 1 Reverse Breakdown Voltage IR= 20µA -10 10 mV 1
VRef 2 Reverse Breakdown Voltage IR= 20mA -10 10 mV 1
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SNVS385A –NOVEMBER 2005–REVISED MARCH 2013
Typical Performance Characteristics
Reverse Characteristics Reverse Characteristics
Figure 3. Figure 4.
Forward Characteristics Temperature Drift
Figure 5. Figure 6.
Reverse Dynamic Reverse Dynamic
Impedance Impedance
Figure 7. Figure 8.
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SNVS385A –NOVEMBER 2005–REVISED MARCH 2013
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Typical Performance Characteristics (continued)
Noise Voltage Filtered Output Noise
Figure 9. Figure 10.
Response Time
Figure 11.
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SNVS385A –NOVEMBER 2005–REVISED MARCH 2013
APPLICATIONS
Figure 12. Wide Input Range Reference
Figure 13. Micropower Reference from 9V Battery
Figure 14. Micropower 5V Reference
IQ≃40 μA
Figure 15. Micropower 10V Reference
IQ≃30 μA standby current
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SNVS385A –NOVEMBER 2005–REVISED MARCH 2013
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Precision 1 μA to 1 mA Current Sources
METER THERMOMETERS
Figure 16. 0°C–100°C Thermometer
Calibration
1. Short LM385-2.5, adjust R3 for IOUT= temp at 1μA/°K
2. Remove short, adjust R2 for correct reading in centigrade
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SNVS385A –NOVEMBER 2005–REVISED MARCH 2013
Figure 17. 0°F–50°F Thermometer
Calibration
1. Short LM385-2.5, adjust R3 for IOUT=temp at 1.8 μA/°K
2. Remove short, adjust R2 for correct reading in °F
Figure 18. Improving Regulation of Adjustable Regulators
Figure 19. Micropower Thermocouple Cold Junction Compensator
Adjustment Procedure
1. Adjust TC ADJ pot until voltage across R1 equals Kelvin temperature multiplied by the thermocouple Seebeck
coefficient.
2. Adjust zero ADJ pot until voltage across R2 equals the thermocouple Seebeck coefficient multiplied by 273.2.
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SNVS385A –NOVEMBER 2005–REVISED MARCH 2013
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Thermocouple Seebeck Co-efficient R1 R2 Voltage Across R1 Voltage Across R2
Type (μV/°C) (Ω) (Ω) @25°C (mV)
(mV)
J 52.3 523 1.24k 15.60 14.32
T 42.8 432 1k 12.77 11.78
K 40.8 412 953Ω12.17 11.17
S 6.4 63.4 150Ω1.908 1.766
REVISION HISTORY SECTION
Released Revision Section Originator Changes
11/08/05 A New Release, Corporate format L. Lytle 2 MDS data sheets converted into one Corp.
data sheet format. MNLM185-2.5-X Rev 2A2
and MNLM185-2.5BY-X Rev 1B1 will be
archived.
03/20/13 A All Changed layout of National Data Sheet to TI
format.
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PACKAGE OPTION ADDENDUM
www.ti.com 25-Oct-2016
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
5962-8759402XA ACTIVE TO NDU 2 20 TBD Call TI Call TI -55 to 125 8759402XA Q
5962-8759402YA ACTIVE CFP NAC 10 54 TBD Call TI Call TI -55 to 125 LM185WG-
2.5/883 Q
5962-87594
02YA ACO
02YA >T
5962-8759406VXA ACTIVE TO NDU 2 20 TBD Call TI Call TI -55 to 125 8759406VXA Q
LM185-2.5 MD8 ACTIVE DIESALE Y 0 100 Green (RoHS
& no Sb/Br) Call TI Level-1-NA-UNLIM -55 to 125
LM185BYH2.5-QV ACTIVE TO NDU 2 20 TBD Call TI Call TI -55 to 125 8759406VXA Q
LM185BYH2.5/883 ACTIVE TO NDU 2 20 TBD Call TI Call TI -55 to 125 LM185BY2.5 Q
LM185H-2.5-SMD ACTIVE TO NDU 2 20 TBD Call TI Call TI -55 to 125 8759402XA Q
LM185H-2.5/883 ACTIVE TO NDU 2 20 TBD Call TI Call TI -55 to 125 LM185-2.5 Q
LM185WG-2.5/883 ACTIVE CFP NAC 10 54 TBD Call TI Call TI -55 to 125 LM185WG-
2.5/883 Q
5962-87594
02YA ACO
02YA >T
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
PACKAGE OPTION ADDENDUM
www.ti.com 25-Oct-2016
Addendum-Page 2
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF LM185-2.5QML, LM185-2.5QML-SP :
•Military: LM185-2.5QML
•Space: LM185-2.5QML-SP
NOTE: Qualified Version Definitions:
•Military - QML certified for Military and Defense Applications
•Space - Radiation tolerant, ceramic packaging and qualified for use in Space-based application
MECHANICAL DATA
NAC0010A
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WG10A (Rev H)
MECHANICAL DATA
NDU0002A
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H02A (Rev F)
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