IPW60R090CFD7 MOSFET 600VCoolMOSCFD7PowerTransistor PG-TO247-3 CoolMOSTMisarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.ThelatestCoolMOSTMCFD7isthe successortotheCoolMOSTMCFD2seriesandisanoptimizedplatform tailoredtotargetsoftswitchingapplicationssuchasphase-shiftfull-bridge (ZVS)andLLC.Resultingfromreducedgatecharge(Qg),best-in-class reverserecoverycharge(Qrr)andimprovedturnoffbehaviorCoolMOSTM CFD7offershighestefficiencyinresonanttopologies.AspartofInfineon's fastbodydiodeportfolio,thisnewproductseriesblendsalladvantagesof afastswitchingtechnologytogetherwithsuperiorhardcommutation robustness,withoutsacrificingeasyimplementationinthedesign-in process.TheCoolMOSTMCFD7technologymeetshighestefficiencyand reliabilitystandardsandfurthermoresupportshighpowerdensity solutions.Altogether,CoolMOSTMCFD7makesresonantswitching topologiesmoreefficient,morereliable,lighterandcooler. Drain Pin 2 Gate Pin 1 Features Source Pin 3 *Ultra-fastbodydiode *Lowgatecharge *Best-in-classreverserecoverycharge(Qrr) *ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness *LowestFOMRDS(on)*QgandRDS(on)*Eoss *Best-in-classRDS(on)inSMDandTHDpackages Benefits *Excellenthardcommutationruggedness *Highestreliabilityforresonanttopologies *Highestefficiencywithoutstandingease-of-use/performancetradeoff *Enablingincreasedpowerdensitysolutions Potentialapplications SuiteableforSoftSwitchingtopologies Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications-Server, Telecom,EVCharging ProductValidation:Qualifiedforindustrialapplicationsaccordingtothe relevanttestsofJEDEC47/20/22 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 90 m Qg,typ 51 nC ID,pulse 97 A Eoss @ 400V 5.9 J Body diode diF/dt 1300 A/s Type/OrderingCode Package IPW60R090CFD7 PG-TO 247-3 Final Data Sheet Marking 60R090F7 1 RelatedLinks see Appendix A Rev.2.0,2018-02-15 600VCoolMOSCFD7PowerTransistor IPW60R090CFD7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.0,2018-02-15 600VCoolMOSCFD7PowerTransistor IPW60R090CFD7 1Maximumratings atTj=25C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 25 16 A TC=25C TC=100C - 97 A TC=25C - - 114 mJ ID=5.5A; VDD=50V; see table 10 EAR - - 0.57 mJ ID=5.5A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 5.5 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 125 W TC=25C Storage temperature Tstg -55 - 150 C - Operating junction temperature Tj -55 - 150 C - Mounting torque - - - 60 Ncm M3 and M3.5 screws IS - - 25 A TC=25C Diode pulse current IS,pulse - - 97 A TC=25C Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD<=25A,Tj=25C see table 8 Maximum diode commutation speed diF/dt - - 1300 A/s VDS=0...400V,ISD<=25A,Tj=25C see table 8 Insulation withstand voltage VISO - - n.a. V Vrms,TC=25C,t=1min Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive Continuous diode forward current 2) 1) Limited by Tj max. Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG 2) Final Data Sheet 3 Rev.2.0,2018-02-15 600VCoolMOSCFD7PowerTransistor IPW60R090CFD7 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 1.0 C/W - Thermal resistance, junction - ambient RthJA - - 62 C/W leaded Thermal resistance, junction - ambient RthJA for SMD version - - - C/W n.a. Soldering temperature, wavesoldering only allowed at leads - - 260 C Final Data Sheet Tsold 4 1.6mm (0.063 in.) from case for 10s Rev.2.0,2018-02-15 600VCoolMOSCFD7PowerTransistor IPW60R090CFD7 3Electricalcharacteristics atTj=25C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 4 4.5 V VDS=VGS,ID=0.57mA - 12 1 47 A VDS=600V,VGS=0V,Tj=25C VDS=600V,VGS=0V,Tj=125C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.069 0.157 0.09 - VGS=10V,ID=11.4A,Tj=25C VGS=10V,ID=11.4A,Tj=150C Gate resistance RG - 8.0 - f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 3.5 Zero gate voltage drain current1) IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 2103 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 40 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related2) Co(er) - 73 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related3) Co(tr) - 752 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 33 - ns VDD=400V,VGS=10V,ID=9.6A, RG=5.3;seetable9 Rise time tr - 17 - ns VDD=400V,VGS=10V,ID=9.6A, RG=5.3;seetable9 Turn-off delay time td(off) - 88 - ns VDD=400V,VGS=10V,ID=9.6A, RG=5.3;seetable9 Fall time tf - 6 - ns VDD=400V,VGS=10V,ID=9.6A, RG=5.3;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 12 - nC VDD=400V,ID=9.6A,VGS=0to10V Gate to drain charge Qgd - 17 - nC VDD=400V,ID=9.6A,VGS=0to10V Gate charge total Qg - 51 - nC VDD=400V,ID=9.6A,VGS=0to10V Gate plateau voltage Vplateau - 5.5 - V VDD=400V,ID=9.6A,VGS=0to10V 1) Maximum specification is defined by calculated six sigma upper confidence bound Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 3) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 5 Rev.2.0,2018-02-15 600VCoolMOSCFD7PowerTransistor IPW60R090CFD7 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=11.4A,Tj=25C 109 164 ns VR=400V,IF=9.6A,diF/dt=100A/s; see table 8 - 0.54 1.08 C VR=400V,IF=9.6A,diF/dt=100A/s; see table 8 - 8.3 - A VR=400V,IF=9.6A,diF/dt=100A/s; see table 8 Min. Typ. Max. VSD - 1.0 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 6 Rev.2.0,2018-02-15 600VCoolMOSCFD7PowerTransistor IPW60R090CFD7 4Electricalcharacteristicsdiagrams Diagram2:Safeoperatingarea 140 103 120 102 100 101 80 100 100 s 60 10-1 1 ms 40 10-2 20 10-3 1 s 10 s ID[A] Ptot[W] Diagram1:Powerdissipation 0 0 25 50 75 100 125 10 ms DC 10-4 150 100 101 102 TC[C] 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 102 1 s 101 100 10 s 0.5 ZthJC[K/W] ID[A] 100 100 s 10-1 1 ms 0.2 10-1 0.1 0.05 10-2 10 ms 0.02 DC 0.01 10-3 single pulse 10-4 100 101 102 103 10-2 10-5 10-4 10-3 VDS[V] ID=f(VDS);TC=80C;D=0;parameter:tp Final Data Sheet 10-2 10-1 100 tp[s] ZthJC=f(tP);parameter:D=tp/T 7 Rev.2.0,2018-02-15 600VCoolMOSCFD7PowerTransistor IPW60R090CFD7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 140 100 20 V 10 V 120 20 V 8V 10 V 80 8V 100 7V 60 ID[A] ID[A] 80 7V 60 40 6V 40 20 5.5 V 5.5 V 5V 5V 0 4.5 V 6V 20 0 4.5 V 0 5 10 15 20 0 5 10 VDS[V] 15 ID=f(VDS);Tj=25C;parameter:VGS ID=f(VDS);Tj=125C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 0.260 2.5 5.5 V 6V 6.5 V 7V 10 V 2.0 RDS(on)[normalized] 0.230 RDS(on)[] 20 V 0.200 0.170 0.140 20 VDS[V] 1.5 1.0 0 20 40 60 80 100 0.5 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[C] RDS(on)=f(Tj);ID=11.4A;VGS=10V 8 Rev.2.0,2018-02-15 600VCoolMOSCFD7PowerTransistor IPW60R090CFD7 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 150 10 9 25 C 125 400 V 120 V 8 7 100 VGS[V] ID[A] 6 150 C 75 5 4 50 3 2 25 1 0 0 2 4 6 8 10 0 12 0 10 20 VGS[V] 30 40 50 60 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=9.6Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 125 100 101 IF[A] EAS[mJ] 75 125 C 50 25 C 0 10 25 10-1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 VSD[V] 100 125 150 Tj[C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=5.5A;VDD=50V 9 Rev.2.0,2018-02-15 600VCoolMOSCFD7PowerTransistor IPW60R090CFD7 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 105 690 104 660 Ciss 103 C[pF] VBR(DSS)[V] 630 102 Coss 600 101 Crss 570 100 540 -50 -25 0 25 50 75 100 125 150 10-1 0 100 200 Tj[C] 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy 10 9 8 7 Eoss[J] 6 5 4 3 2 1 0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 10 Rev.2.0,2018-02-15 600VCoolMOSCFD7PowerTransistor IPW60R090CFD7 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 11 ID VDS Rev.2.0,2018-02-15 600VCoolMOSCFD7PowerTransistor IPW60R090CFD7 6PackageOutlines Figure1OutlinePG-TO247-3,dimensionsinmm/inches Final Data Sheet 12 Rev.2.0,2018-02-15 600VCoolMOSCFD7PowerTransistor IPW60R090CFD7 7AppendixA Table11RelatedLinks * IFXCoolMOSCFD7Webpage:www.infineon.com * IFXCoolMOSCFD7applicationnote:www.infineon.com * IFXCoolMOSCFD7simulationmodel:www.infineon.com * IFXDesigntools:www.infineon.com Final Data Sheet 13 Rev.2.0,2018-02-15 600VCoolMOSCFD7PowerTransistor IPW60R090CFD7 RevisionHistory IPW60R090CFD7 Revision:2018-02-15,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2018-02-15 Release of final version TrademarksofInfineonTechnologiesAG AURIXTM,C166TM,CanPAKTM,CIPOSTM,CoolGaNTM,CoolMOSTM,CoolSETTM,CoolSiCTM,CORECONTROLTM,CROSSAVETM,DAVETM,DI-POLTM,DrBladeTM, EasyPIMTM,EconoBRIDGETM,EconoDUALTM,EconoPACKTM,EconoPIMTM,EiceDRIVERTM,eupecTM,FCOSTM,HITFETTM,HybridPACKTM,InfineonTM, ISOFACETM,IsoPACKTM,i-WaferTM,MIPAQTM,ModSTACKTM,my-dTM,NovalithICTM,OmniTuneTM,OPTIGATM,OptiMOSTM,ORIGATM,POWERCODETM, PRIMARIONTM,PrimePACKTM,PrimeSTACKTM,PROFETTM,PRO-SILTM,RASICTM,REAL3TM,ReverSaveTM,SatRICTM,SIEGETTM,SIPMOSTM,SmartLEWISTM, SOLIDFLASHTM,SPOCTM,TEMPFETTM,thinQTM,TRENCHSTOPTM,TriCoreTM. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ("Beschaffenheitsgarantie"). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 Rev.2.0,2018-02-15