DIL BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS BAS29- L20 ALL DIMENSIONS IN mm BAS31 - L21 BAS35 L22 3.0 2.8 0.48 2 1 0.38 3 | | t | | BAS31 | 1 2} | 1.02 0.89 2 1 0.60 2.00 0.40 1.80 BAS35 ABSOLUTE MAXIMUM RATINGS (per diode) Continuous reverse voltage VR Repetitive peak forward current IERM Forward current Ip Junction temperature Tj Forward voltage at Ip = 50 mA VRE Reverse recovery time when switched from Ip = 30 mA to Ir = 30 mA; Ry, = 100 Q; measured at Ip = 3 mA try RATINGS (per diode) (at Ta = 25C unless otherwise specified) Limiting values Continuous reverse voltage VR Repetitive peak forward current TERM Repetitive peak reverse current IRRM max. max. max. max. max. max. max. 90 V 600 mA 250 mA 150 C 0.84 V 75 ns 90 V 600 mA 600 mADIL BAS29, BAS31, BAS35 Average rectified forward current {averaged over any 20 ms period) IF(AV) Non-repetitive peak forward current t = 1 ps; Tj = 25 C prior to surge; per crystal IFSM t = 1s; Tj = 25 C prior to surge; per crystal Forward current (D) Ip Repetitive peak reverse energy tp 2 50 ps; f < 20 Hz; TZ = 25 C ERRM Storage temperature Tstg Junction temperature Tj THERMAL RESISTANCE From junction to ambient* Rth j-a CHARACTERISTICS (per diode) Tamb = 25 C unless otherwise specified Forward voltage Ip = 10 mA Ve Ip = 50 mA VE Ip = 100 mA VE Ip = 200 mA VE Ip = 400 mA VRE Reverse currents VR =90V IR VR = 90 V; Tamb = 150 C Ir Reverse avalanche breakdown voltage IR=1mA V@BR)R Diode capacitance VR = 0; f = 1 MHz Ca Reverse recovery time when switched from Ip = 30 mA to Ip = 30 mA; Ry = 100 Q; measured at Ip = 3 mA ter max. 250 mA max. 3A max. 0.75 A max. 250 mA max. 5.0 mJ ~55 to +150 C max. 150 C = 430 K/W < 0.75 V < 0.84 V < 0.90 V < 1.00 V < 1.25 V < 100 nA < 100 pA 120 to 175 V < 35 pF < 75 ns * When mounted on a ceramic substrate of 8 mm x 10 mm 80.7 mm. 6