BUZ 20 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 20 100 V 13.5 A 0.2 TO-220 AB C67078-S1302-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 28 C Values Unit A 13.5 IDpuls Pulsed drain current TC = 25 C 54 Avalanche current,limited by Tjmax IAR 13.5 Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse EAR 7.9 mJ EAS ID = 13.5 A, VDD = 25 V, RGS = 25 L = 486 H, Tj = 25 C 59 Gate source voltage VGS Power dissipation Ptot TC = 25 C 20 V W 75 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC 1.67 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group C 55 / 150 / 56 1 07/96 BUZ 20 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage 100 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS A VDS = 100 V, VGS = 0 V, Tj = 25 C - 0.1 1 VDS = 100 V, VGS = 0 V, Tj = 125 C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 RDS(on) VGS = 10 V, ID = 8.5 A Semiconductor Group nA - 2 0.17 0.2 07/96 BUZ 20 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS 2 * ID * RDS(on)max, ID = 8.5 A Input capacitance 3 pF - 400 530 - 120 180 - 70 105 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 4.7 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time - 10 15 - 45 70 - 55 75 - 40 55 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 20 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed - - 54 V 1.4 1.6 trr ns - 170 - Qrr VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 13.5 - VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge - VSD VGS = 0 V, IF = 27 A Reverse recovery time - ISM TC = 25 C Inverse diode forward voltage A C - 4 0.3 - 07/96 BUZ 20 Drain current ID = (TC) parameter: VGS 10 V Power dissipation Ptot = (TC) 14 80 A W Ptot 12 ID 60 11 10 9 50 8 7 40 6 30 5 4 20 3 2 10 0 0 1 0 20 40 60 80 100 120 C 0 160 20 40 60 80 100 120 TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C C 160 TC Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 10 2 t = 16.0s p K/W I DS / D A 10 1 100 s V ZthJC 10 0 DS (o n) = ID R 1 ms 10 -1 D = 0.50 10 ms 0.20 10 0 0.10 DC 0.05 10 -2 0.02 0.01 single pulse 10 -1 0 10 10 1 V 10 10 -3 -7 10 2 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 20 Typ. output characteristics ID = (VDS) Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS parameter: tp = 80 s 30 Ptot = 75W A l 0.65 a k 26 ID 22 j b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 l 20.0 20 18 i 16 h 14 g 12 f 10 e 8 d 6 16 i j 0.25 0.20 k 0.15 0.05 V h 0.30 0.10 20 g 0.35 a 12 f 0.40 b 8 e 0.45 c 4 d RDS (on) 0.50 4 2 0 0 c 0.55 VGS [V] a 4.0 24 b 0.00 0 26 VGS [V] = a 4.0 4.5 b 5.0 4 c 5.5 8 d 6.0 e f 6.5 7.0 12 g 7.5 16 h i j k 8.0 9.0 10.0 20.0 20 24 VDS A Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max parameter: tp = 80 s, VDS2 x ID x RDS(on)max 24 6.0 A S 20 ID 5.0 gfs 18 4.5 16 4.0 14 3.5 12 3.0 10 2.5 8 2.0 6 1.5 4 1.0 2 0.5 0 0 30 ID 0.0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0 4 8 12 16 A ID 07/96 22 BUZ 20 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 8.5 A, VGS = 10 V 0.65 4.6 V 98% 4.0 0.55 VGS(th) RDS (on) 0.50 3.6 0.45 3.2 0.40 2.8 0.35 2.4 0.30 2% 2.0 98% 0.25 typ typ 1.6 0.20 1.2 0.15 0.8 0.10 0.4 0.05 0.00 -60 -20 20 60 100 C 0.0 -60 160 -20 20 60 100 C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C 10 0 10 1 Ciss 10 -1 10 0 Coss Tj = 25 C typ Crss Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 07/96 3.0 BUZ 20 Avalanche energy EAS = (Tj ) parameter: ID = 13.5 A, VDD = 25 V RGS = 25 , L = 486 H Typ. gate charge VGS = (QGate) parameter: ID puls = 15 A 60 16 mJ V 50 EAS VGS 45 12 0,2 VDS max 0,8 VDS max 40 10 35 30 8 25 6 20 15 4 10 2 5 0 20 0 40 60 80 100 120 C 160 Tj 0 10 20 30 40 50 nC Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 120 V 116 V(BR)DSS114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 70 BUZ 20 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96