AO3418
30V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 3.8A
R
DS(ON)
(at V
GS
=10V) < 55mΩ
R
DS(ON)
(at V
GS
=4.5V) < 65mΩ
R
DS(ON)
(at V
GS
=2.5V) < 85mΩ
Symbol
V
DS
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
30V
Drain-Source Voltage
30
The AO3418 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as
a load switch or in PWM applications.
V
Maximum UnitsParameter
G
D
S
SOT23
Top View Bottom View
D
G
S
G
S
D
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJL
W
1.4
Maximum Junction-to-Lead °C/W
°C/W
Maximum Junction-to-Ambient
A D
63 125
80
Maximum Junction-to-Ambient
A
V±12Gate-Source Voltage T
A
=25°C
T
A
=70°C
Power Dissipation
B
P
D
Pulsed Drain Current
C
Continuous Drain
Current
T
A
=25°C
Drain-Source Voltage
30
A
I
D
3.8
3.1
15
°C
Thermal Characteristics UnitsParameter Typ
V
Max
0.9
T
A
=70°C
Junction and Storage Temperature Range -55 to 150
°C/W
R
θJA
70
100 90
G
D
S
SOT23
Top View Bottom View
D
G
S
G
S
D
Rev 8: Jan. 2011
www.aosmd.com Page 1 of 5
AO3418
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 0.5 1 1.5 V
I
D(ON)
15 A
43 55
T
J
=125°C 70 84
47 65 mΩ
59 85 mΩ
g
FS
14 S
V
SD
0.75 1 V
I
S
1.5 A
C
iss
185 235 285 pF
C
oss
25 35 45 pF
C
rss
10 18 25 pF
R
g
2.1 4.3 6.5 Ω
Q
g
(10V) 10 12 nC
Q
g
(4.5V) 4.7 nC
Q
gs
0.95 nC
Q
gd
1.6 nC
t
3.5
ns
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=3.8A
Reverse Transfer Capacitance V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
I
DSS
µA
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
=±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Forward Transconductance
Diode Forward Voltage
R
DS(ON)
Static Drain-Source On-Resistance mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=3.8A
V
GS
=2.5V, I
D
=1A
V
GS
=4.5V, I
D
=3.5A
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=3.8A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
t
D(on)
3.5
ns
t
r
1.5 ns
t
D(off)
17.5 ns
t
f
2.5 ns
t
rr
8.5 11 ns
Q
rr
2.6 3.5 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time I
F
=3.8A, dI/dt=100A/µs
Turn-Off Fall Time
Body Diode Reverse Recovery Charge I
F
=3.8A, dI/dt=100A/µs
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime V
GS
=10V, V
DS
=15V, R
L
=3.95Ω,
R
GEN
=3Ω
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 8: Jan. 2011 www.aosmd.com Page 2 of 5
AO3418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0 0.5 1 1.5 2 2.5 3
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
30
40
50
60
70
80
0 2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=2.5V
ID=1A
VGS=4.5V
ID=3.5A
VGS=10V
ID=3.8A
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
0
3
6
9
12
15
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=2.0V
4.5V
10V 3V 2.5V
VGS=2.5V
40
0
2
4
6
8
10
0 0.5 1 1.5 2 2.5 3
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
30
40
50
60
70
80
0 2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=2.5V
ID=1A
VGS=4.5V
ID=3.5A
VGS=10V
ID=3.8A
20
40
60
80
100
120
0 2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
ID=3.8A
25°C
125°C
0
3
6
9
12
15
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=2.0V
4.5V
10V 3V 2.5V
VGS=2.5V
Rev 8: Jan. 2011 www.aosmd.com Page 3 of 5
AO3418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 2 4 6 8 10 12
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
50
100
150
200
250
300
350
400
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=15V
ID=3.8A
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
TA=25°C
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
T
A
=25°C
100
µ
s
10ms
0
2
4
6
8
10
0 2 4 6 8 10 12
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
50
100
150
200
250
300
350
400
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=15V
ID=3.8A
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
TA=25°C
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
T
A
=25°C
100
µ
s
10ms
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
Rev 8: Jan. 2011 www.aosmd.com Page 4 of 5
AO3418
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
DUT Vgs
Diode Recovery Test Circuit & Waveforms
Vds +
rr
Q = - Idt
t
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Rev 8: Jan. 2011 www.aosmd.com Page 5 of 5
