TOSHIBA 4N29,4N29A,4N30,4N31,4N32,4N32A,4N33(Short) TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR 4N29(Short), 4N29A(Short), 4N30(Short), 4N31(Short) 4N32(Short), 4N32A(Short), 4N33(Short) AC LINE/DIGITAL LOGIC ISOLATOR. Unit in mm DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TWISTED PAIR LINE RECEIVER. & 5 (4 RELAY CONTACT MONITOR. a a S a Te The TOSHIBA 4N29 (Short) through 4N33 (Short) consists arsenide 12 3 infrared emitting diode coupled with a silicon photo darlington in a 7.12 20.26, % 7.62 0.25 dual in-line package. 6 iS +0.4 2 0.25 -0.05,| @ Switching Time : 100s (Max.) 4 0.5 + 0.14 12+0.152 | @ DC Current Transfer Ratio : 500% 2640.25 % 785~8.80 @ Isolation Resistance : 100, (Typ.) @ Isolation Voltage > 2500Vyms (Min.) 11-7A8 Weight : 0.4 PIN CONFIGURATIONS (Top view) if 16 os Ts 30 M4 : ANODE : CATHODE : N.C, : EMITTER : COLLECTOR : BASE ao a fF WN & 1 2001-06-01TOSHIBA 4N29,4N29A,4N30,4N31,4N32,4N32A,4N33(Short) MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Forward Current (Continuous) Ip 80 mA Forward Current Derating AlIp/C 1.07(*) |mA/C a Peak Forward Current (Note 1) IpF 3 A +] | Power Dissipation Pp 150 mW Power Dissipation Derating APp/C 2.07%) mWw/C Reverse Voltage VR 3 Vv mM |Collector-Emitter Voltage BVCEO 30 Vv Collector-Base Voltage BVCBO 30 V q | Emitter-Collector Voltage BVECO 5 Vv 5 Collector Current (Continuous) Ic 100 mA = | Power Dissipation Pc 150 mW | Power Dissipation Derating APC /C 2.0(*7) mWw/C a Storage Temperature Range Tstg 55~150 C f=] | Operating Temperature Range Topr 55~100 C . Lead Soldering Temperature Tol 260 C +5 | Total Package Power Dissipation Pp 250 mW S Total Package Power Dissipation APp/C 3.3(%) fmw/c Derating (Note 1) Pulse width 300s, 2% duty cycle. (*) Above 25C ambient. 2 2001-06-01TOSHIBA 4N29,4N29A,4N30,4N31,4N32,4N32A,4N33(Short) ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Q |Forward Voltage VF Ip=10mA 1.15 | 1.5 Vv & |Reverse Current IR VR=3V 100 | wA 4 Capacitance Cp V=0, f=1MHz 30 | pF DC Forward Current Gain hFr VcE=5, Ic=0.5mA 10k | & | Collector-Emitter o Breakdown Voltage V (BR) CEO} Ic=1mA 30) _ Vv 2 Voltas Base Breakdown V (BR) CBO Ie =100A 30| _ V Emitter-Collector A Breakdown Voltage V (BR) ECO} Le = 100A a} = _ v Collector Dark Current ICEO VcE=10V 1.0 | 100 | nA 4N32, 4N32A sol | Collector | 4N33 Output | 4N29,4N29A | Ic Ip=10mA, VoR=10V wo! | | mA Current 4N30 4N31 5 Collector- | 4N29,4N29A Emitter 4N30, 4N382 _ 1.0 Saturation AN32A, 4N33 | VCE (sat) |Ir=8mA, I=2mA Vv Voltage 4N31 1.2 A Turn-on Time toN 5 us 4 4N29, 4N29A A lTurn-off | 4N30, 4N31 Ip=200mA, Voc =10V 40 | Time 4N32, 4N32A | OFF |ic=50mA ~ | 7 Figo | QO 4N33 Ont Input to Cg V=0, f=1MHz | 08] | pF Isolation Resistance Rg V=500V 19044 | QO BVg AC, 1 minute R. H.=60% 2500 | | Vrms AN29, 4N29A 2500 _ _ Isolation 4N32, 4N32A AC, peak Vpk Voltage 4N30, 4N31 BVg (*) , 1500| _ 4N33 4N29A, 4N32A AC, 1 second 1775 | | |Vmms (*) JEDEC registered minimum BVg, however, Toshiba specifies a minimum BVg of 2500Vrms 1 minute. 2001-06-01TOSHIBA 4N29,4N29A,4N30,4N31,4N32,4N32A,4N33(Short) If - Ta Pc Ta 200 B z 5 3 = 4 ~ & LE 160 5 a a 2 Bo ae Be 120 Bs Bz ex Og q Aa 80 3 a Q oF 40 3 3 < < 0 20 0 20 40 60 80 100 =: 120 20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) AMBIENT TEMPERATURE Ta (C) Ipp Dr If VE 2 100 @ PULSE WIDTH 1 ys 50 & Ta=25C 2 30 fa i Z m 10 BE & z 2 fe oO fs 3 a 2 a o = 2 1 5 : & ie 0.5 qj 2 08 5 Gu 0.1 3 10-83 10-2 3 10-13 10 0.6 0.8 1.0 1.2 1.4 1.6 1.8 DUTY CYCLE RATIO Dr FORWARD VOLTAGE Vr (V) AVF/ATa Ip Ipp VFP -3.2 1000 500 300 -2.8 -24 100 2.0 50 30 -16 10 -1.2 PULSE WIDTH= 10ys REPETITIVE FREQUENCY =100Hz FORWARD VOLTAGE TEMPERATURE COEFFICIENT AVp/ATa (mVv/*C) 0.8 PULSE FORWARD CURRENT Ipp (mA) Ta =25C -0.4 0.1 0.3 1 3 10 30 0.6 1.0 1.4 1.8 2.2 2.6 FORWARD CURRENT Ip (mA) PULSE FORWARD VOLTAGE VFp (V) 4 2001-06-01TOSHIBA 4N29,4N29A,4N30,4N31,4N32,4N32A,4N33(Short) COLLECTOR CURRENT Ic (mA) Io/Ip (%) CURRENT TRANSFER RATIO COLLECTOR CURRENT Ic (mA) 5000 3000 1000 Ic VCE 4mA3.5mA 3mA Ta =25C 2.5mA ImA Ip=0.5mA 2 4 6 8 10 12 14 COLLECTOR-EMITTER VOLTAGE VcE (V) Ic/If - IF Vop=1V Ta=25C Base OPEN 500 300 100 50 30 10 0.1 1 40 RpE=5.1MQ 0.38 1 3 10 30 100 FORWARD CURRENT Ip (mA) Ic Ta RBpR=5.10, VcE=1V === VcE=12V 20 0 20 40 60 80 AMBIENT TEMPERATURE Ta (C) 100 COLLECTOR CURRENT Ic (mA) Icko (A) COLLECTOR DARK CURRENT SWITCHING TIME (sss) Ic - IF Vec=1v Ta=25C RBE OPEN Ol 0.3 1 3 10 30 100 FORWARD CURRENT Ip (mA) IcEO Ta 0 20 40 60 80 100 =: 120 140 AMBIENT TEMPERATURE Ta (C) SWITCHING TIME Ru 500 300 100 Ip=1lmA Rpe=5.1MQ 50 Voc=5V Ta =25C 30 1 3 10 30 LOAD RESISTANCE Ry (kQ) 2001-06-01TOSHIBA 4N29,4N29A,4N30,4N31,4N32,4N32A,4N33(Short) RESTRICTIONS ON PRODUCT USE 000707EBC @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. @ The products described in this document are subject to the foreign exchange and foreign trade laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 6 2001-06-01