PIN OUTS
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
HIGH VOLTAGE, HIGH CURRENT, HIGH
SPEED, NPN SWITCHING TRANSISTOR IN
A HERMETICALLY SEALED
TO-39 METAL PACKAGE FOR HIGH
RELIABILITY APPLICATIONS
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HERMETIC METAL PACKAGE
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• JAN LEVEL SCREENING OPTIONS
• HIGH SPEED SATURATED SWITCHING
APPLICATIONS:
Hermetically se aled 2 N3725 for high
reliability applications. Suitable for
memory application.
TO-39 METAL
(TO205AD)
MECHANICAL DATA
Dimensions in mm (inches)
2N3725
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 4303
Issue 1
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C unless otherwise stated)
VCBO Collector-b ase Voltage (IE = 0) 80V
VCES Collector-emitte r Voltage (V BE = 0) 80V
VCEO Collector-emitter Voltag e (IB = 0) 50V
VEBO Emitter-base Vol ta ge (I C = 0) 6V
IC Collector Current 1A
Ptot Total Power Dissipation at Tamb ≤ 25 °C
at Tcase ≤ 25 °C 0.8W
3.5W
Tj Junction Temperature – 65 to 200 °C
Tstg Storage Temperature – 65 to 200 °C
0.89
(0.035)max.
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
123
0.74 (0.029)
1.14 (0.045)
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
2N3725
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Websit e: http://www.semelab.co.uk Document Number 4303
Issue 1
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise stated)
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter Test Conditions Min. Typ. Max. Unit
VCB = 60 V 1.7
ICBO Collector Cutoff Current (IE = 0)
VCB = 60 V Tamb = 100 `C 120
µA
V(BR)CBO Collector-Base Breakdown Voltage (IE = 0) IC = 10 µA 80 V
V(BR)CES Collector-Emitter Breakdown
Voltage (VBE = 0) IC = 10 µA 80 V
V(BR)CEO* Collector-Emitter Breakdown Volt age (IB = 0) IC = 10 mA 50 V
V(BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = 10 µA 6 V
IC = 10 mA IB = 1 mA 0.19 0.25
IC = 100 mA IB = 10 mA 0.21 0.26
IC = 300 mA IB = 30 mA 0.31 0.4
IC = 500 mA IB = 50 mA 0.4 0.52
IC = 800 mA IB = 80 mA 0.5 0.8
VCE(sat ) * Collector-Emitter Saturation Voltage
IC = 1000 mA IB = 100 mA 0.6 0.95
V
IC = 10 mA IB = 1 mA 0.64 0.76
IC = 100 mA IB = 10 mA 0.75 0.86
IC = 300 mA IB = 30 mA 0.89 1.1
IC = 500 mA IB = 50 mA 0.9 1.2
IC = 800 mA IB = 80 mA 1.0 1.5
VBE(sat ) *
Base-Emitter Saturation Voltage
IC = 1000 mA IB = 100 mA 1.1 1.7
V
IC = 10 mA VCE = 1 V 30 60
IC = 100 mA VCE = 1 V 60 90 150
IC = 300 mA VCE = 1 V 40 60
IC = 1000 mA VCE = 5 V 25 65
IC = 800 mA VCE = 2 V 20 40
hFE* DC Current Gain
IC = 500 mA VCE = 1 V 35
hfe High Frequency Current Gain (f = 100Mhz) IC = 50 mA VCE = 10 V 3
CCBO Collector-Base Capacitance (f = 1Mhz) IE = 0 VCB = 10 V 10 pF
CEBO Emitter-Base Capacitance (f = 1Mhz) IC = 0 VCB = 0.5 V 55 pF
ton Turn-on Time IC = 500 mA
IB = 50 mA VCC = 30 V 35 ns
toff Turn off Time IC = 500 mA VCC = 30 V
IB1 = – IB2 = 50 mA 60 ns
* Pulsed : pulse duration = 300µs, duty cycle = 1%
THERMAL DATA (T
c
a
se
= 25°C unless otherwise stated)
Parameter Test Conditions Min. Typ. Max. Unit
R th j-case Thermal Resistance Junction-Case 50
°C/W
R th j-amb Thermal Resistance Junction-Ambient 220
°C/W
