BFP620F H7764 - Infineon Technologies

2007-04-20

BFP620F

NPN Silicon Germanium RF Transistor*

• High gain low noise RF transistor

• Small package 1.4 x 0.8 x 0.59 mm

• Outstanding noise figure F = 0.7 dB at 1.8 GHz

Outstanding noise figure F = 1.3 dB at 6 GHz

• Maximum stable gain

Gms = 21 dB at 1.8 GHz

Gma = 10 dB at 6 GHz

• Gold metallization for extra high reliability

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

* Short term description

Direction of Unreeling

Top View

XYs

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BFP620F R2s 1=B 2=E 3=C 4=E - - TSFP-4

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage

TA > 0 °C

≤ 0 °C

VCEO

2.3

2.1

Collector-emitter voltage VCES 7.5

Collector-base voltage VCBO 7.5

Emitter-base voltage VEBO 1.2

Collector current IC80 mA

Base current IB3

Total power dissipation2)

TS ≤ 96°C Ptot 185 mW

Junction temperature T

150 °C

Ambient temperature T

-65 ... 150

Storage temperature Tst

-65 ... 150

1Pb-containing package may be available upon special request

2TS is measured on the collector lead at the soldering point to the pcb

2007-04-20

BFP620F

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point1) RthJS ≤ 290 K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0 V(BR)CEO 2.3 2.8 - V

Collector-emitter cutoff current

VCE = 7.5 V, VBE = 0 ICES - - 10 µA

Collector-base cutoff current

VCB = 5 V, IE = 0 ICBO - - 100 nA

Emitter-base cutoff current

VEB = 0.5 V, IC = 0 IEBO - - 3 µA

DC current gain

IC = 50 mA, VCE = 1.5 V, pulse measured hFE 110 180 270 -

1For calculation of RthJA please refer to Application Note Thermal Resistance

2007-04-20

BFP620F

Electrical Characteristics at T

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 50 mA, VCE = 1.5 V, f = 1 GHz fT- 65 - GHz

Collector-base capacitance

VCB = 2 V, f = 1 MHz, VBE = 0 ,

emitter grounded

Ccb - 0.12 0.2 pF

Collector emitter capacitance

VCE = 2 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce - 0.2 -

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb - 0.45 -

Noise figure

IC = 5 mA, VCE = 1.5 V, f = 1.8 GHz, ZS = ZSopt

IC = 5 mA, VCE = 1.5 V, f = 6 GHz, ZS = ZSopt

0.7

1.3

Power gain, maximum stable1)

IC = 50 mA, VCE = 1.5 V, ZS = ZSopt,

ZL = ZLopt , f = 1.8 GHz

Gms - 21 - dB

Power gain, maximum available1)

IC = 50 mA, VCE = 1.5 V, ZS = ZSopt,

ZL = ZLopt, f = 6 GHz

Gma - 10 - dB

Transducer gain

IC = 50 mA, VCE = 1.5 V, ZS = ZL = 50 Ω,

f = 1.8 GHz

f = 6 GHz

|S21e|2

19.5

9.5

Third order intercept point at output2)

VCE = 2 V, IC = 50 mA, ZS=ZL=50 Ω, f = 1.8 GHz IP3- 25 - dBm

1dB Compression point at output

IC = 50 mA, VCE = 2 V, ZS=ZL=50 Ω, f = 1.8 GHz P-1dB - 14 -

1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|

2IP3 value depends on termination of all intermodulation frequency components.

Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz

2007-04-20

BFP620F

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):

Transistor Chip Data:

IS = 0.22 fA

VAF = 1000 V

NE = 2-

VAR = 2V

NC = 2-

RBM = 2.707 Ω

CJE = 250.7 fF

TF = 1.43 ps

ITF = 2.4 A

VJC = 0.6 V

TR = 0.2 ns

MJS = 0.5 -

XTI = 3-

AF = 2 -

TITF1 -0.0065 -

BF = 425 -

IKF = 0.25 A

BR = 50 -

IKR = 10 mA

RB = 3.129 Ω

RE = 0.6 -

VJE = 0.75 V

XTF = 10 -

PTF = 0 deg

MJC = 0.5 -

CJS = 128.1 fF

NK = -1.42 -

FC = 0.8

KF = 7.291E-11

TITF2 1.0E-5

NF = 1.025 -

ISE = 21 fA

NR = 1-

ISC = 18 pA

IRB = 1.522 mA

RC = 2.364 Ω

MJE = 0.3 -

VTF = 1.5 V

CJC = 124.9 fF

XCJC = 1-

VJS = 0.52 V

EG = 1.078 eV

TNOM 298 K

All parameters are ready to use, no scalling is necessary.

Package Equivalent Circuit: LB0 = 0.22 nH

LE0 = 0.28 nH

LC0 = 0.22 nH

KB0-E0 = 0.1 -

KB0-C0 = 0.01 -

KE0-C0 = 0.11 -

CBE = 34 fF

CBC = 2fF

CCE = 33 fF

LBI =0.42 nH

RLBI = 0.15 Ω

LEI = 0.26 nH

RLEI = 0.11 Ω

LCI = 0.35 nH

RLI = 0.13 Ω

KBI-EI = -0.05 -

KBI-CI = -0.08 -

KEI-

I = 0.2 -

Valid up to 6GHz

To avoid high complexity of the package equivalent circuit,

both emitter leads of TSFP-4 are combined in one electrical

connection.RLxI are series resistors for the inductances LxI

and Kxa-yb are the coupling coefficients between the

inductances Lxa and Lyb.

2007-04-20

BFP620F

Total power dissipation Ptot = ƒ(TS)

0 15 30 45 60 75 90 105 120 °C 150

100

120

140

160

200

Ptot

Permissible Pulse Load RthJS = ƒ(tp)

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

K/W

RthJS

0.5

0.2

0.1

0.05

0.02

0.01

0.005

D = 0

Permissible Pulse Load

Ptotmax/PtotDC = ƒ(tp)

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

Ptotmax/ PtotDC

D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

Collector-base capacitance Ccb= ƒ(VCB)

f = 1MHz

0123456V8

VCB

0.05

0.1

0.15

0.2

0.25

0.3

0.4

CCB

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BFP620F

Third order Intercept Point IP3=ƒ(IC)

(Output, ZS=ZL=50Ω)

VCE = parameter, f =1.8GHz

0 10 20 30 40 50 60 70 mA 90

-5

dBm

IP3

0.8V 1.1V

1.4V

1.7V

2.3V

Transition frequency fT= ƒ(IC)

f = 1GHz

VCE = Parameter in V

0 10 20 30 40 50 60 70 80 mA 100

GHz

1 to 2.3

0.8

0.5

0.3

Power gain Gma, Gms = ƒ(IC)

VCE = 1.5V

f = Parameter in GHz

0 10 20 30 40 50 60 70 mA 90

0.9

1.8

2.4

Power Gain Gma, Gms = ƒ(f),

|S21|² = f (f)

VCE = 1.5V, IC = 50mA

01234GHz 6

Gms

Gma

|S21|²

2007-04-20

BFP620F

Power gain Gma, Gms = ƒ (VCE)

IC = 50mA

f = Parameter in GHz

0.2 0.6 1 1.4 1.8 V2.6

VCE

-4

0.9

1.8

2.4

Noise figure F = ƒ(IC)

VCE = 1.5V, ZS = ZSopt

0 10 20 30 40 50 60 70 80

0.5

1.5

2.5

f = 4GHz

f = 2.4GHz

f = 5GHz

f = 0.9GHz

f = 1.8GHz

f = 6GHz

f = 3GHz

[mA]

F [dB]

Noise figure F = ƒ(IC)

VCE = 1.5V, f = 1.8 GHz

0 10 20 30 40 50 60 70 80

0.5

1.5

2.5

[mA]

F [dB]

= 50Ω

= Z

Sopt

Noise figure F = ƒ(f)

VCE = 1.5V, ZS = ZSopt

1 2 3 4 5 6 7

0.5

1.5

2.5

F [dB]

f [GHz]

= 50mA

= 5.0mA

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BFP620F

Source impedance for min.

noise figure vs. frequency

VCE = 1.5V, IC = 5.0mA/50.0mA

10.1 0.2 0.3 0.40.5 21.5 3 4 5

−5

−1

0.5

1.5

−0.5

−1.5

0.1

−0.1

0.2

−0.2

−2

0.3

−0.3

0.4 3

−0.4 −3

−4

−10

= 5.0mA

2.4GHz

3GHz

4GHz

1.8GHz

= 50mA

6GHz

5GHz

2007-04-20

BFP620F

Package TSFP-4

Package Outline

Foot Print

Marking Layout (Example)

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

BFP420F

Type code

Pin 1

0.35

0.45

0.9

0.5 0.5

40.2

1.55 0.7

1.4

Pin 1

±0.05

0.2

±0.05

1.4

10˚ MAX.

±0.05

0.8

1.2

±0.05

±0.04

0.55

±0.05

0.2

±0.05

0.15

±0.05

0.2

0.5

±0.05

0.5

±0.05

Manufacturer

2007-04-20

BFP620F

Edition 2006-02-01

Published by

Infineon Technologies AG

81726 München, Germany

Attention please!

The information given in this dokument shall in no event be regarded as a guarantee

of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any

examples or hints given herein, any typical values stated herein and/or any information

regarding the application of the device, Infineon Technologies hereby disclaims any

and all warranties and liabilities of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices

please contact your nearest Infineon Technologies Office (www.infineon.com).

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Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest

Infineon Technologies Office.

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systems with the express written approval of Infineon Technologies, if a failure of

such components can reasonably be expected to cause the failure of that

life-support device or system, or to affect the safety or effectiveness of that

device or system.

Life support devices or systems are intended to be implanted in the human body,

or to support and/or maintain and sustain and/or protect human life. If they fail,

it is reasonable to assume that the health of the user or other persons

may be endangered.