NJG1140KA1
- 1 -
Ver.2011-06-23
WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC
GENERAL DESCRIPTION
PACKAGE OUTLINE
The NJG1140KA1 is a wide band low noise amplifier GaAs MMIC
designed for Set-top Boxes, TV tuners and DTV applications.
The NJG1140KA1 features broadband operation from 50MHz to
2150MHz, high linearity and high ESD tolerance. The NJG1140KA1
requires only four external components. The NJG1140KA1 is
available in a small, lead-free, halogen-free, 1.6mm x 1.6mm x 0.55
mm, 6-pin FLP6-A1 package.
FEATURES
Wide operating frequency range 50MHz~2150MHz
Operation voltage 3.3V typ. (+2.5V~+4.0V)
Current consumption 10mA typ. @ V
DD
=3.3V
Gain 9.0dB typ. @ V
DD
=3.3V
High P
-1dB(IN)
+7.0dBm @ V
DD
=3.3V
High Input IP3 +9.0dBm @ V
DD
=3.3V
High ESD tolerance On-chip ESD protection circuit
External components count 4 pcs. (capacitors 3pcs, inductor 1pc)
Small package FLP6-A1 (package size: 1.6mm x 1.6mm x 0.55mm typ.)
Lead -free and halogen-free
PIN CONFIGURATION
(TOP VIEW)
NOTE: The information on this datasheet is subject to change without notice
Pin Connection
1. GND
2. GND(NC)
3. RFOUT
4. GND
5. GND(NC)
6. RFIN
NJG1140KA1
4
5
6
LNA
b
ias
ircuit
GND
GND
(NC)
GND
RFO
UT
RFIN
GND
(NC)
1Pin INDEX
NJG1140KA1
- 2 -
ABSOLUTE MAXIMUM RATINGS
T
a
=+25°C, Z
s
=Z
l
=50
Ω
PARAMETER SYMBOL
CONDITIONS RATINGS UNITS
Supply voltage
V
DD
5.0 V
Input power
P
IN
V
DD
=3.3V +15 dBm
Power dissipation P
D
4-layer FR4 PCB with through-hole
(74.2mmx74.2mm), T
j
=150°C 580 mW
Operating temperature
T
opr
-40~+85 °C
Storage temperature
T
stg
-55~+150 °C
ELECTRICAL CHARACTERISTICS (DC)
GENERAL CONDITIONS: V
DD
=3.3V, T
a
=+25°C, Z
s
=Z
l
=50Ω
PARAMETERS SYMBOL
CONDITIONS MIN TYP MAX UNITS
Supply voltage
V
DD
2.5 3.3 4.0 V
Supply current I
DD
- 10 14 mA
ELECTRICAL CHARACTERISTICS (RF)
GENERAL CONDITIONS: V
DD
=3.3V, f
RF
=50~2150MHz, T
a
=+25°C, Z
s
=Z
l
=50Ωwith application circuit
PARAMETERS SYMBOL
CONDITIONS MIN TYP MAX UNITS
Operating frequency
Freq
50 - 2150 MHz
Small signal gain
Gain Exclude PCB and
connector losses
*1
7.0 9.0 12.0 dB
Noise figure NF Exclude PCB and
connector losses
*2
- 2.5 3.0 dB
Input power at 1dB gain
compression point P
-1dB(IN)
+2.0 +7.0 - dBm
Input 3rd order
intercept point IIP3 f1=f
RF
, f2=f
RF
+100kHz,
Pin=-20dBm +5.0 +9.0 - dBm
Isolation ISO S12 - -16.0 - dB
RF IN VSWR VSWRi - 1.5 3.3
RF OUT VSWR VSWRo
- 1.5 3.3
*1: Input and output PCB, connector losses: 0.016dB(at 50MHz), 0.254dB(at 2150MHz)
*2: Input PCB, connector losses: 0.008dB(at 50MHz), 0127dB(at 2150MHz)
NJG1140KA1
- 3 -
TERMINAL INFORMATION
No.
SYMBOL
DESCRIPTION
1 GND Ground terminal. Connect to the PCB ground plane.
2 NC
(GND)
No connected terminal. This terminal is not connected with internal
circuit. Connect to the PCB ground plane.
3 RFOUT RF output terminal. Requires a DC blocking capacitor C2 and DC feed
inductor L1.
4 GND Ground terminal. Connect to the PCB ground plane.
5 NC
(GND)
No connected terminal. This terminal is not connected with internal
circuit. Connect to the PCB ground plane.
6 RFIN RF input terminal. Requires a DC bloking capacitor C1.
NJG1140KA1
- 4 -
TYPICAL CHARACTERISTICS
GENERAL CONDITIONS
: V
DD
=3.3V, Ta=+25
o
C, Z
s
=Z
l
=50ohm
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10
Pout, IM3 (dBm)
Pin (dBm)
Pout
IM3
Pout, IM3 vs. Pin
(f1=620MHz, f2=f1+100kHz)
IIP3=+9.8dBm
-40
-30
-20
-10
0
10
20
-40 -30 -20 -10 0 10
Pout (dBm)
Pin (dBm)
P-1dB(IN)=+8.2dBm
Pout
Pout vs. Pin
(freq=620MHz)
-4
-2
0
2
4
6
8
10
12
1
1.5
2
2.5
3
3.5
4
4.5
5
0 500 1000 1500 2000 2500 3000
Gain (dB)
NF (dB)
Frequency (MHz)
NF
Gain
Gain, NF vs. Frequency
(freq=50~3000MHz)
(Exclude PCB, Connector Losses)
0
2
4
6
8
10
12
0 500 1000 1500 2000 2500
P-1dB(IN) vs. Frequency
(freq=50~2150MHz)
Frequency (MHz)
P-1dB(IN)
P-1dB(IN) (dBm)
0
2
4
6
8
10
12
0
10
20
30
40
50
60
-40 -30 -20 -10 0 10
Gain (dB)
I
DD
(mA)
Pin (dBm)
Gain
I
DD
Gain, I
DD
vs. Pin
(freq=620MHz)
P-1dB(IN)=+8.2dBm
8
10
12
14
16
18
20
22
0 500 1000 1500 2000 2500
IIP3, OIP3 (dBm)
Frequency (MHz)
OIP3
IIP3
IIP3, OIP3 vs. Frequency
(f1=50~2150MHz, f2=f1+100kHz, Pin=-20dBm)
NJG1140KA1
- 5 -
TYPICAL CHARACTERISTICS
GENERAL CONDITIONS
: V
DD
=3.3V, Ta=+25
o
C, Z
s
=Z
l
=50ohm
0
2
4
6
8
10
12
14
2 2.5 3 3.5 4 4.5
P-1dB(IN) vs. V
DD
(f=620MHz)
P-1dB(IN) (dBm)
V
DD
(V)
4
5
6
7
8
9
10
11
12
1
1.5
2
2.5
3
3.5
4
4.5
5
2 2.5 3 3.5 4 4.5
Gain, NF vs. V
DD
(f=620MHz)
Gain (dB)
NF(dB)
V
DD
(V)
Gain
NF
(Exclude PCB, Connector Losses)
1
1.5
2
2.5
3
3.5
4
2 2.5 3 3.5 4 4.5
VSWR vs. V
DD
(f=620MHz)
VSWR
V
DD
(V)
VSWRo
VSWRi
5
10
15
20
25
2 2.5 3 3.5 4 4.5
OIP3, IIP3 vs. V
DD
(f=620MHz)
OIP3, IIP3 (dBm)
V
DD
(V)
OIP3
IIP3
0
5
10
15
20
2 2.5 3 3.5 4 4.5
I
DD
vs. V
DD
(RF OFF)
I
DD
(mA)
V
DD
(V)
NJG1140KA1
- 6 -
TYPICAL CHARACTERISTICS
GENERAL CONDITIONS
: V
DD
=3.3V, Ta=+25
o
C, Z
s
=Z
l
=50ohm
S11, S22
S21, S12
VSWR Zin, Zout
S11, S22 (f=50MHz~20GHz) S21, S12 (f=50MHz~20GHz)
NJG1140KA1
- 7 -
TYPICAL CHARACTERISTICS
0
5
10
15
-40 -20 0 20 40 60 80 100
P-1dB(IN) vs. Temperature
(f=620MHz)
P-1dB(IN) (dBm)
Temperature (
o
C)
0
5
10
15
20
0 5 10 15 20
K factor vs. Temperature
(f=50MHz~20GHz)
-40(
o
C)
-20(
o
C)
0(
o
C)
25(
o
C)
60(
o
C)
85(
o
C)
K factor
Frequency (GHz)
4
8
12
16
20
24
-40 -20 0 20 40 60 80 100
OIP3, IIP3 vs. Temperature
(f1=620MHz, f2=f1+100kHz, Pin=-20dBm)
OIP3, IIP3 (dBm)
Temperature (
o
C)
OIP3
IIP3
0
2
4
6
8
10
12
14
-40 -20 0 20 40 60 80 100
I
DD
vs. Temperature
(RF OFF)
I
DD
(mA)
Temperature (
o
C)
6
7
8
9
10
11
12
1
1.5
2
2.5
3
3.5
4
-40 -20 0 20 40 60 80 100
Gain, NF vs. Temperature
(f=620MHz)
Gain (dB)
NF(dB)
Temperature (
o
C)
Gain
NF
(Exclude PCB, Connector Losses)
GENERAL CONDITIONS
: V
DD
=3.3V, Z
s
=Z
l
=50ohm
-40 -20 0 20 40 60 80 100
VSWR vs. Temperature
(f1=620MHz)
1
1.5
2
2.5
3
3.5
4
VSWR
Temperature (
o
C)
VSWRi
VSWRo
NJG1140KA1
- 8 -
APPLICATION CIRCUIT
TEST PCB LAYOUT
Parts ID Comments
L1 TAIYO YUDEN
HK1005 Series
C1~C3 MURATA MFG
GRM15 Series
Parts list
PCB (FR-4):
t=0.2mm
MICROSTRIP LINE WIDTH
=0.40mm (Z
0
=50Ω)
PCB SIZE=16.8mm x 16.8mm
CAUTION
In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC.
RFIN
RFOUT
VDD
L1
270nH
C2
0.01µ
µµ
µF
C3
0.01µ
µµ
µF
C1
0.01µ
µµ
µF
(Top View)
1Pin INDEX
3
4
5
6
2
1
LNA
bias
circuit
GND
GND
(NC)
GND
(NC)
GND
RFOUT
RFIN
(Top View)
V
DD
RF IN
RF OUT
L1
C2
C3
C1
1Pin INDEX
NJG1140KA1
- 9 -
PACKAGE OUTLINE (FLP6-A1)
Caution
s
on using
this
product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
•
To
wast
e
th
is
product, please obey the relati
ng
law
of
your
country.
This product may be damaged with electric static discharge (ESD) or spike voltage. P
lease
hand
le with care to avoid these damages
.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions.
The application circuits in this databook are
described only to show representative
usages of the product and not intended for
the guarantee or permission of any right
including the industrial rights.
1.6 0.05
1.6 0.05
1.2 0.05
0.5 0.5
0.55 0.05
0.10.1
0.22 0.05
0.13 0.05
0.2 0.10.2 0.1
Unit: mm