2N4416/2N4416A/SST4416 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N4416 -v6 -30 4.5 5 2N4416A -2.5 to -6 -35 4.5 5 SST4416 -v6 -30 4.5 5 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: 2N4416/A, Gps 13 dB (typ) @ 400 MHz D Very Low Noise: 3 dB (typ) @ 400 MHz D Very Low Distortion D High AC/DC Switch Off-Isolation D D D D D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches DESCRIPTION The 2N4416/2N4416A/SST4416 n-channel JFETs are designed to provide high-performance amplification at high frequencies. The TO-206AF (TO-72) hermetically-sealed package is available with full military processing (see Military Information.) The TO-236 (SOT-23) package provides a low-cost option and is available with tape-and-reel options (see Packaging Information). For similar products in the TO-226AA (TO-92) package, see the J304/305 data sheet. TO-206AF (TO-72) TO-236 (SOT-23) S C 1 4 D 1 3 S 2 G 2 3 D G Top View 2N4416 2N4416A Top View SST4416 (H1)* *Marking Code for TO-236 For applications information see AN104. Document Number: 70242 S-04028--Rev. F, 04-Jun-01 www.vishay.com 7-1 2N4416/2N4416A/SST4416 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150 _C Gate-Drain, Gate-Source Voltage : (2N/SST4416) . . . . . . . . . . . . . . . . . . . . . -30 V (2N4416A) . . . . . . . . . . . . . . . . . . . . . . . . . -35 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . -65 to 200 _C (SST Prefix) . . . . . . . . . . . . . . . . . -65 to 150_C (2N Prefix)a . . . . . . . . . . . . . . . . . . . . . . 300 mW (SST Prefix)b . . . . . . . . . . . . . . . . . . . . 350 mW Power Dissipation : Notes a. Derate 2.4 mW/_C above 25_C b. Derate 2.8 mW/_C above 25_C SPECIFICATIONS (TA = 25_C UNLESS NOTED) Limits 2N4416 Parameter 2N4416A SST4416 Symbol Test Conditions Typa Min V(BR)GSS IG = -1 mA , VDS = 0 V -36 -30 VGS(off) VDS = 15 V, ID = 1 nA -3 VDS = 15 V, VGS = 0 V 10 VGS = -20 V, VDS = 0 V (2N) -2 -100 -100 -4 -100 -100 Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current IDSS IGSS TA = 150_C VGS = -15 V, VDS = 0 V (SST) TA = 125_C Gate Operating Current 5 -35 -6 -2.5 15 5 -30 -6 V -6 15 5 15 mA pA -0.002 -1 nA -0.6 IG VDG = 10 V, ID = 1 mA -20 ID(off) VDS = 10 V, VGS = -6 V 2 Drain-Source On-Resistancec rDS(on) VGS = 0 V, ID = 1 mA 150 W Gate-Source Forward Voltagec VGS(F) IG = 1 mA , VDS = 0 V 0.7 V Drain Cutoff Currentc pA Dynamic Common-Source Forward Transconductanceb gfs Common-Source Output Conductanceb gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Common-Source Output Capacitance Coss Equivalent Input Noise Voltagec www.vishay.com 7-2 en VDS = 15 V, VGS = 0 V f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 10 V, VGS = 0 V f = 1 kHz 6 4.5 7.5 4.5 7.5 15 50 50 2.2 4 4 0.7 0.8 0.8 1 2 2 6 4.5 7.5 mS 50 mS pF nV Hz Document Number: 70242 S-04028--Rev. F, 04-Jun-01 2N4416/2N4416A/SST4416 Vishay Siliconix HIGHFREQUENCY SPECIFICATIONS FOR 2N4416/2N4416A (TA = 25_C UNLESS NOTED) Limits 100 MHz Parameter Symbol Min Test Conditions 400 MHz Max Min Max Unit Common Source Input Conductance giss 100 1,000 Common Source Input Susceptance biss 2,500 10,000 Common Source Output Conductance goss Common Source Output Susceptance boss Common Source Forward Transconductance gfs Common-Source Power Gain Gps Noise Figure NF VDS = 15 V, VGS = 0 V mS m 75 100 1,000 4,000 4,000 VDS = 15 V, ID = 5 mA 18 10 2 RG = 1 kW dB 4 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC. NH TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 10 8 6 gfs 12 4 8 IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 4 0 2 rDS(on) - Drain-Source On-Resistance ( ) 16 0 0 -2 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 400 rDS 300 60 gos 200 40 100 20 0 -10 0 0 -2 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) Output Characteristics -10 Output Characteristics 10 15 VGS(off) = -2 V VGS(off) = -3 V 8 12 VGS = 0 V ID - Drain Current (mA) ID - Drain Current (mA) 80 gos - Output conductance (S) IDSS 100 500 gfs - Forward Transconductance (mS) IDSS - Saturation Drain Current (mA) 20 -0.2 V 6 -0.4 V 4 -0.6 V -0.8 V -1.0 V -1.2 V 2 VGS = 0 V -0.3 V 9 -0.6 V -0.9 V 6 -1.2 V -1.5 V 3 -1.8 V 0 0 2 -1.4 V 4 6 8 VDS - Drain-Source Voltage (V) Document Number: 70242 S-04028--Rev. F, 04-Jun-01 10 0 0 2 4 6 8 VDS - Drain-Source Voltage (V) 10 www.vishay.com 7-3 2N4416/2N4416A/SST4416 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics Output Characteristics 5 5 VGS(off) = -2 V VGS = 0 V 4 4 -0.3 V -0.2 V ID - Drain Current (mA) ID - Drain Current (mA) VGS = 0 V VGS(off) = -3 V -0.4 V 3 -0.6 V -0.8 V 2 -1.0 V 1 -0.6 V 3 -1.2 V -0.9 V -1.5 V 2 -1.8 V 1 -1.2 V -2.1 V -1.4 V 0 0 0 0.2 0.4 0.6 0.8 0 1.0 0.2 VDS - Drain-Source Voltage (V) VDS = 10 V VGS(off) = -3 V 8 1.0 VDS = 10 V 8 TA = -55_C ID - Drain Current (mA) ID - Drain Current (mA) 0.8 10 VGS(off) = -2 V 25_C 6 125_C 4 2 TA = -55_C 25_C 6 4 125_C 2 0 0 0 -0.4 -0.8 -1.2 -1.6 0 -2 -0.6 -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltgage 10 10 VGS(off) = -3 V VDS = 10 V f = 1 kHz gfs - Forward Transconductance (mS) VGS(off) = -2 V gfs - Forward Transconductance (mS) 0.6 Transfer Characteristics Transfer Characteristics 10 8 TA = -55_C 6 25_C 4 125_C 2 0 VDS = 10 V f = 1 kHz 8 TA = -55_C 6 25_C 4 125_C 2 0 0 -0.4 -0.8 -1.2 -1.6 VGS - Gate-Source Voltage (V) www.vishay.com 7-4 0.4 VDS - Drain-Source Voltage (V) -2 0 -0.6 -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V) Document Number: 70242 S-04028--Rev. F, 04-Jun-01 2N4416/2N4416A/SST4416 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current 100 g fs R L AV + 1 ) R g L os TA = 25_C 240 80 VGS(off) = -2 V AV - Voltage Gain rDS(on) - Drain-Source On-Resistance ( ) 300 180 -3 V 120 60 Assume VDD = 15 V, VDS = 5 V RL + 60 40 VGS(off) = -2 V 20 -3 V 0 0.1 0 ID - Drain Current (mA) 1 10 ID - Drain Current (mA) 1 0.1 Common-Source Input Capacitance vs. Gate-Source Voltage 10 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 3 5 Crss - Reverse Feedback Capacitance (pF) f = 1 MHz 4 Ciss - Input Capacitance (pF) 10 V ID 3 VDS = 0 V 2 10 V 1 f = 1 MHz 2.4 1.8 VDS = 0 V 1.2 10 V 0.6 0 0 0 -4 -8 -12 -16 VGS - Gate-Source Voltage (V) 0 -20 -4 -8 -12 -16 VGS - Gate-Source Voltage (V) Input Admittance -20 Forward Admittance 100 100 TA = 25_C VDS = 15 V VGS = 0 V Common Source TA = 25_C VDS = 15 V VGS = 0 V Common Source bis 10 10 gfs (mS) (mS) gis 1 0.1 100 -bfs 1 200 500 f - Frequency (MHz) Document Number: 70242 S-04028--Rev. F, 04-Jun-01 1000 0.1 100 200 500 1000 f - Frequency (MHz) www.vishay.com 7-5 2N4416/2N4416A/SST4416 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Reverse Admittance Output Admittance 10 10 TA = 25_C VDS = 15 V VGS = 0 V Common Source bos -brs 1 gos (mS) (mS) 1 -grs 0.1 0.1 TA = 25_C VDS = 15 V VGS = 0 V Common Source 0.01 100 0.01 200 1000 500 100 f - Frequency (MHz) Common-Source Forward Transconductance vs. Drain Current 10 IG @ ID = 5 mA VGS(off) = -3 V gfs - Forward Transconductance (mS) IG - Gate Leakage 0.1 mA TA = 125_C 1 nA IGSS @ 125_C 100 pA 5 mA 10 pA 1 mA 0.1 mA TA = 25_C 1 pA IGSS @ 25_C 0.1 pA 8 TA = -55_C 6 25_C 4 125_C 2 0 0 4 8 12 16 0.1 20 VDG - Drain-Gate Voltage (V) 20 Equivalent Input Noise Voltage vs. Frequency 10 Output Conductance vs. Drain Current 20 VGS(off) = -3 V gos - Output Conductance (S) Hz 1 ID - Drain Current (mA) VDS = 10 V en - Noise Voltage nV / VDS = 10 V f = 1 kHz 1 mA 10 nA 1000 500 f - Frequency (MHz) Gate Leakage Current 100 nA 200 16 12 8 ID = 5 mA 4 VDS = 10 V f = 1 kHz 16 TA = -55_C 12 25_C 8 125_C 4 VGS = 0 V 0 0 10 100 1k f - Frequency (Hz) www.vishay.com 7-6 10 k 100 k 0.1 1 10 ID - Drain Current (mA) Document Number: 70242 S-04028--Rev. F, 04-Jun-01