Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS -40V
▼ Lower On-resistance RDS(ON) 38mΩ
▼ Fast Switching Characteristic ID-24A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 3.5 ℃/W
Rthj-a 62.5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W
Data and specifications subject to change without notice
-55 to 150
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Linear Derating Factor
Storage Temperature Range
Continuous Drain Current, VGS @ 10V -15
Pulsed Drain Current1-80
35.7
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
-40
+16
-24
0.28
AP9565GEH/J
Rating
RoHS-compliant Product
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
200903094
1
GDSTO-252(H)
GDSTO-251(J)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9565GEJ) is
available for low-profile applications.
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -40 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.02 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-12A - - 38 mΩ
VGS=-4.5V, ID=-8A - - 58 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.8 - -2.5 V
gfs Forward Transconductance VDS=-10V, ID=-16A - 13 - S
IDSS Drain-Source Leakage Current VDS=-40V, VGS=0V - - -1 uA
Drain-Source Leakage Current (Tj=125oC) VDS=-32V, VGS=0V - - -250 uA
IGSS Gate-Source Leakage VGS=+16V, VDS=0V - - +30 uA
QgTotal Gate Charge2ID=-16A - 10 16 nC
Qgs Gate-Source Charge VDS=-30V - 2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 6 - nC
td(on) Turn-on Delay Time2VDS=-20V - 8 - ns
trRise Time ID=-1A - 6 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 28 - ns
tfFall Time RD=20Ω-16-ns
Ciss Input Capacitance VGS=0V - 765 1230 pF
Coss Output Capacitance VDS=-25V - 150 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 100 - pF
RgGate Resistance f=1.0MHz - 6 9 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-16A, VGS=0V - - -1.3 V
trr Reverse Recovery Time2IS=-16A, VGS=0V, - 24 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 17 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP9565GEH/J
3.Surface mounted on 1 in2 copper pad of FR4 board
2
AP9565GEH/J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. On-Resistance vs.
Reverse Diode Drain Current
3
0
20
40
60
80
02468
-V DS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=25oC -10V
-7.0V
-5.0V
-4.5V
VG= -3.0 V
0.6
1.0
1.4
1.8
25 50 75 100 125 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID= -16 A
VG= -10V
0.0
5.0
10.0
15.0
20.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-V SD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25 oCT j=150 oC
0
20
40
60
02468
-V DS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC= 150 oC
-10V
-7.0V
-5.0V
-4.5V
VG= -3.0 V
20
40
60
80
100
120
246810
-V GS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=-8A
TC=25
℃
20.0
30.0
40.0
50.0
60.0
0 10203040
-I D , Drain Current (A)
RDS(ON) (mΩ)
VGS =-4.5V
VGS =-10V
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4
AP9565GEH/J
Q
VG
-4.5V
QGS QGD
QG
Charge
10
100
1000
1 5 9 13 17 21 25 29
-V DS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0
2
4
6
8
10
12
048121620
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
ID= - 16 A
VDS = - 30 V
0.1
1
10
100
0.1 1 10 100
-V DS , Drain-to-Source Voltage (V)
-ID (A)
Tc=25 oC
Single Pulse
100us
1ms
10ms
100ms
DC
0
10
20
30
40
0246
-V GS , Gate-to-Source Voltage (V)
-ID , Drain Current (A)
Tj=150 oCT j=25 oC
VDS = -5V
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Thermal Response (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.0
0.0
0.0
0.1
0.2
DUTY=0.
SINGLE PULSE
