PZT2222AT1 Preferred Device NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. Features * PNP Complement is PZT2907AT1 * The SOT-223 package can be soldered using wave or reflow * SOT-223 package ensures level mounting, resulting in improved http://onsemi.com SOT-223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT thermal conduction, and allows visual inspection of soldered joints COLLECTOR 2, 4 * The formed leads absorb thermal stress during soldering, * * eliminating the possibility of damage to the die Available in 12 mm tape and reel Pb-Free Packages are Available BASE 1 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage (Open Collector) VEBO 6.0 Vdc Collector Current IC 600 mAdc Total Power Dissipation up to TA = 25C (Note 1) PD 1.5 W Storage Temperature Range Tstg - 65 to +150 C Junction Temperature TJ 150 C 4 1 2 SOT-223 (TO-261) CASE 318E-04 STYLE 1 3 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x 0.059 inches; mounting pad for the collector lead min. 0.93 inches2. THERMAL CHARACTERISTICS Rating Symbol Value Unit RJA 83.3 C/W TL 260 10 C Sec Thermal Resistance, Junction-to-Ambient Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath AWW P1F A WW = Assembly Location = Work Week ORDERING INFORMATION Device Package Shipping PZT2222AT1 SOT-223 3000 Tape & Reel PZT2222AT1G SOT-223 (Pb-Free) 3000 Tape & Reel PZT2222AT3 SOT-223 10,000 Tape & Reel PZT2222AT3G SOT-223 (Pb-Free) 10,000 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2005 April, 2005 - Rev. 5 1 Publication Order Number: PZT2222AT1/D PZT2222AT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 - Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 75 - Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 - Vdc IBEX - 20 nAdc Collector-Emitter Cutoff Current (VCE = 60 Vdc, VBE = - 3.0 Vdc) ICEX - 10 nAdc Emitter-Base Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO - 100 nAdc Collector-Base Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 125C) ICBO - - 10 10 35 50 70 35 100 50 40 - - - - 300 - - - - 0.3 1.0 0.6 - 1.2 2.0 2.0 0.25 8.0 1.25 - - 8.0x10-4 4.0x10-4 50 75 300 375 5.0 25 35 200 F - 4.0 dB Current-Gain - Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 300 - MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cc - 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ce - 25 pF (VCC = 30 Vdc, IC = 150 mAdc, IB(on) mAdc VEB(off) 0 5 Vdc) B( ) = 15 mAdc, EB( ff) = 0.5 Figure 1 td - 10 ns tr - 25 (VCC = 30 Vdc, IC = 150 mAdc, IB(on) B( ) = IB(off) B( ff) = 15 mAdc) Figure 2 ts - 225 tf - 60 OFF CHARACTERISTICS Base-Emitter Cutoff Current (VCE = 60 Vdc, VBE = - 3.0 Vdc) nAdc Adc ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = - 55C) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) hFE Collector-Emitter Saturation Voltages (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base-Emitter Saturation Voltages (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hie Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hre Small-Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hfe Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hoe Noise Figure (VCE = 10 Vdc, IC = 100 Adc, f = 1.0 kHz) - Vdc Vdc k - - mhos DYNAMIC CHARACTERISTICS SWITCHING TIMES (TA = 25C) Delay Time Rise Time Storage Time Fall Time http://onsemi.com 2 ns PZT2222AT1 VCC Vi R2 90% 10% 0 tr Vo R1 Vi D.U.T. tp Figure 1. Input Waveform and Test Circuit for Determining Delay Time and Rise Time Vi = - 0.5 V to +9.9 V, VCC = +30 V, R1 = 619 , R2 = 200 . PULSE GENERATOR: PULSE DURATION RISE TIME DUTY FACTOR OSCILLOSCOPE: INPUT IMPEDANCE INPUT CAPACITANCE RISE TIME tp 3 200 ns 2 ns tr 3 = 0.02 Zi > 100 k Ci < 12 pF tr < 5 ns VCC Vi +16.2 V R2 0 Vi TIME R1 D.U.T. R3 Vo OSCILLOSCOPE D1 -13.8 V tf R4 100 s VBB Figure 2. Input Waveform and Test Circuit for Determining Storage Time and Fall Time http://onsemi.com 3 PZT2222AT1 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A F INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0 10 S 0.264 0.287 4 S 1 2 B 3 D L G J C 0.08 (0003) STYLE 1: PIN 1. 2. 3. 4. M H K MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0 10 6.70 7.30 BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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