Semiconductor Components Industries, LLC, 2005
April, 2005 − Rev. 5 1Publication Order Number:
PZT2222AT1/D
PZT2222AT1
Preferred Device
NPN Silicon Planar
Epitaxial Transistor
This NPN Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT-223
package which is designed for medium power surface mount
applications.
Features
•PNP Complement is PZT2907AT1
•The SOT-223 package can be soldered using wave or reflow
•SOT-223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints
•The formed leads absorb thermal stress during soldering,
eliminating the possibility of damage to the die
•Available in 12 mm tape and reel
•Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 75 Vdc
Emitter-Base Voltage
(Open Collector) VEBO 6.0 Vdc
Collector Current IC600 mAdc
Total Power Dissipation
up to TA = 25°C (Note 1) PD1.5 W
Storage Temperature Range°Tstg − 65 to +150 °C
Junction Temperature°TJ150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted o n an epoxy printed circuit board 1.575 inches x 1 .575 i nches x
0.059 inches; mounting pad for the collector lead min. 0.93 inches2.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance,
Junction−to−Ambient RJA 83.3 °C/W
Lead Temperature for Soldering,
0.0625″ from case
Time in Solder Bath
TL260
10 °C
Sec
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MARKING DIAGRAM
SOT−223 (TO−261)
CASE 318E−04
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping†
ORDERING INFORMATION
PZT2222AT1 SOT−223 3000 Tape & Reel
PZT2222AT1G SOT−223
(Pb−Free) 3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
A = Assembly Location
WW = Work Week
BASE
1
COLLECTOR
2, 4
3
EMITTER
123
4
SOT−223 PACKAGE
NPN SILICON TRANSISTOR
SURFACE MOUNT
PZT2222AT3 SOT−223 10,000 Tape & Reel
PZT2222AT3G SOT−223
(Pb−Free) 10,000 Tape & Reel
AWW
P1F
PZT2222AT1
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 − Vdc
Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO °75°− Vdc
Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 − Vdc
Base-Emitter Cutoff Current (VCE = 60 Vdc, VBE = − 3.0 Vdc) IBEX − 20 nAdc
Collector-Emitter Cutoff Current (VCE = 60 Vdc, VBE = − 3.0 Vdc) ICEX − 10 nAdc
Emitter-Base Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO − 100 nAdc
Collector-Base Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
ICBO −
−10
10 nAdc
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = − 55°C)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
hFE 35
50
70
35
100
50
40
−
−
−
−
300
−
−
−
Collector-Emitter Saturation Voltages
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat) −
−0.3
1.0
Vdc
Base-Emitter Saturation Voltages
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat) 0.6
−1.2
2.0
Vdc
Input Impedance°
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
°hie°2.0
0.25 8.0
1.25
k
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hre −
−8.0x10-4
4.0x10-4
−
Small-Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hfe50
75 300
375
−
Output Admittance°
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
°hoe°5.0
25 35
200
mhos
Noise Figure (VCE = 10 Vdc, IC = 100 Adc, f = 1.0 kHz) F − 4.0 dB
DYNAMIC CHARACTERISTICS
Current-Gain − Bandwidth Product
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT300 − MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cc− 8.0 pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ce− 25 pF
SWITCHING TIMES (TA = 25°C)
Delay Time (VCC = 30 Vdc, IC = 150 mAdc,
IB( ) = 15 mAdc VEB( ff) = 0 5 Vdc)
td− 10 ns
Rise Time IB(on) = 15 mAdc, VEB(off) = 0.5 Vdc)
Figure 1 tr− 25
Storage Time (VCC = 30 Vdc, IC = 150 mAdc,
IB( ) =I
B( ff) = 15 mAdc)
ts− 225 ns
Fall Time IB(on) = IB(off) = 15 mAdc)
Figure 2 tf− 60
PZT2222AT1
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3
Vi
90%
10%
tp
tr
0
VCC
R2
R1
ViD.U.T.
Vo
Figure 1. Input Waveform and Test Circuit for Determining Delay Time and Rise Time
Figure 2. Input Waveform and Test Circuit for Determining Storage Time and Fall Time
Vi = − 0.5 V to +9.9 V, VCC = +30 V, R1 = 619 , R2 = 200 .
PULSE GENERATOR: OSCILLOSCOPE:
PULSE DURATION tp3 200 ns INPUT IMPEDANCE Zi> 100 k
RISE TIME tr3 2 ns INPUT CAPACITANCE Ci< 12 pF
DUTY FACTOR = 0.02 RISE TIME tr< 5 ns
tf100 s
−13.8 V
0
+16.2 V
Vi
TIME
VCC
Vo
OSCILLOSCOPE
D.U.T.
Vi
R2
R3
R4
D1
R1
VBB
PZT2222AT1
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4
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE K
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H
S
F
A
B
D
G
L
4
123
0.08 (0003)
C
MK
J
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.249 0.263 6.30 6.70
INCHES
B0.130 0.145 3.30 3.70
C0.060 0.068 1.50 1.75
D0.024 0.035 0.60 0.89
F0.115 0.126 2.90 3.20
G0.087 0.094 2.20 2.40
H0.0008 0.0040 0.020 0.100
J0.009 0.014 0.24 0.35
K0.060 0.078 1.50 2.00
L0.033 0.041 0.85 1.05
M0 10 0 10
S0.264 0.287 6.70 7.30
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1.5
0.059 mm
inches
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091 2.3
0.091
2.0
0.079
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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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Phone: 81−3−5773−3850
PZT2222AT1/D
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