SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
Document Number: 88392
Revision: 04-Sep-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount TRANSZORB® Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use C or CA suffix
(e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
PRIMARY CHARACTERISTICS
VWM 5.0 V to 188 V
PPPM 600 W
IFSM (uni-directional only) 100 A
TJ max. 150 °C
DO-214AA (SMB J-Bend)
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1) PPPM 600 W
Peak pulse current with a 10/1000 µs waveform (1) IPPM See next table A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) I
FSM 100 A
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88392
Revision: 04-Sep-07
2
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
“J” BEND LEAD
DEVICE MARKING
CODE
BREAKDOWN
VOLTAGE
V
BR
AT I
T
(1)
(V)
TEST
CURRENT
I
T
(mA)
STAND-OFF
VOLTAGE
V
WM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(µA)
(3)
MAXIMUM
PEAK PULSE
SURGE
CURRENT
I
PPM
(A)
(2)
MAXIMUM
CLAMPING
VOLTAGE AT
I
PPM
V
C
(V)
UNI BI
MIN. MAX.
(+)SMBJ5.0 KD KD 6.40 7.82 10 5.0 800 62.5 9.6
(+)SMBJ5.0A (5) KE KE 6.40 7.07 10 5.0 800 65.2 9.2
(+)SMBJ6.0 KF KF 6.67 8.15 10 6.0 800 52.6 11.4
(+)SMBJ6.0A KG KG 6.67 7.37 10 6.0 800 58.3 10.3
(+)SMBJ6.5 KH AH 7.22 8.82 10 6.5 500 48.8 12.3
(+)SMBJ6.5A KK AK 7.22 7.98 10 6.5 500 53.6 11.2
(+)SMBJ7.0 KL KL 7.78 9.51 10 7.0 200 45.1 13.3
(+)SMBJ7.0A KM KM 7.78 8.60 10 7.0 200 50.0 12.0
(+)SMBJ7.5 KN AN 8.33 10.2 1.0 7.5 100 42.0 14.3
(+)SMBJ7.5A KP AP 8.33 9.21 1.0 7.5 100 46.5 12.9
(+)SMBJ8.0 KQ AQ 8.89 10.9 1.0 8.0 50 40.0 15.0
(+)SMBJ8.0A KR AR 8.89 9.83 1.0 8.0 50 44.1 13.6
(+)SMBJ8.5 KS AS 9.44 11.5 1.0 8.5 20 37.7 15.9
(+)SMBJ8.5A KT AT 9.44 10.4 1.0 8.5 20 41.7 14.4
(+)SMBJ9.0 KU AU 10.0 12.2 1.0 9.0 10 35.5 16.9
(+)SMBJ9.0A KV AV 10.0 11.1 1.0 9.0 10 39.0 15.4
(+)SMBJ10 KW AW 11.1 13.6 1.0 10 5.0 31.9 18.8
(+)SMBJ10A KX AX 11.1 12.3 1.0 10 5.0 35.3 17.0
(+)SMBJ11 KY KY 12.2 14.9 1.0 11 5.0 29.9 20.1
(+)SMBJ11A KZ KZ 12.2 13.5 1.0 11 5.0 33.0 18.2
(+)SMBJ12 LD BD 13.3 16.3 1.0 12 5.0 27.3 22.0
(+)SMBJ12A LE BE 13.3 14.7 1.0 12 5.0 30.2 19.9
(+)SMBJ13 LF LF 14.4 17.6 1.0 13 1.0 25.2 23.8
(+)SMBJ13A LG LG 14.4 15.9 1.0 13 1.0 27.9 21.5
(+)SMBJ14 LH BH 15.6 19.1 1.0 14 1.0 23.3 25.8
(+)SMBJ14A LK BK 15.6 17.2 1.0 14 1.0 25.9 23.2
(+)SMBJ15 LL BL 16.7 20.4 1.0 15 1.0 22.3 26.9
(+)SMBJ15A LM BM 16.7 18.5 1.0 15 1.0 24.6 24.4
(+)SMBJ16 LN LN 17.8 21.8 1.0 16 1.0 20.8 28.8
(+)SMBJ16A LP LM 17.8 19.7 1.0 16 1.0 23.1 26.0
(+)SMBJ17 LQ LQ 18.9 23.1 1.0 17 1.0 19.7 30.5
(+)SMBJ17A LR LR 18.9 20.9 1.0 17 1.0 21.7 27.6
(+)SMBJ18 LS BS 20.0 24.4 1.0 18 1.0 18.6 32.2
(+)SMBJ18A LT BT 20.0 22.1 1.0 18 1.0 20.5 29.2
(+)SMBJ20 LU LU 22.2 27.1 1.0 20 1.0 16.8 35.8
(+)SMBJ20A LV LV 22.2 24.5 1.0 20 1.0 18.5 32.4
(+)SMBJ22 LW BW 24.4 29.8 1.0 22 1.0 15.2 39.4
(+)SMBJ22A LX BX 24.4 26.9 1.0 22 1.0 16.9 35.5
(+)SMBJ24 LY BY 26.7 32.6 1.0 24 1.0 14.0 43.0
(+)SMBJ24A LZ BZ 26.7 29.5 1.0 24 1.0 15.4 38.9
(+)SMBJ26 MD CD 28.9 35.3 1.0 26 1.0 12.9 46.6
(+)SMBJ26A ME CE 28.9 31.9 1.0 26 1.0 14.3 42.1
(+)SMBJ28 MF MF 31.1 38.0 1.0 28 1.0 12.0 50.0
(+)SMBJ28A MG MG 31.1 34.4 1.0 28 1.0 13.2 45.4
(+)SMBJ30 MH CH 33.3 40.7 1.0 30 1.0 11.2 53.5
(+)SMBJ30A MK CK 33.3 36.8 1.0 30 1.0 12.4 48.4
(+)SMBJ33 ML CL 36.7 44.9 1.0 33 1.0 10.2 59.0
(+)SMBJ33A MM CM 36.7 40.6 1.0 33 1.0 11.3 53.3
(+)SMBJ36 MN CN 40.0 48.9 1.0 36 1.0 9.3 64.3
(+)SMBJ36A MP CP 40.0 44.2 1.0 36 1.0 10.3 58.1
(+)SMBJ40 MQ CQ 44.4 54.3 1.0 40 1.0 8.4 71.4
(+)SMBJ40A MR CR 44.4 49.1 1.0 40 1.0 9.3 64.5
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
Document Number: 88392
Revision: 04-Sep-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Notes:
(1) Pulse test: tp ≤ 50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having VWM of 10 V and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bi-directional SMBG/SMBJ5.0CA, the maximum VBR is 7.25 V
(6) VF = 3.5 V at IF = 50 A (uni-directional only)
(+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
(+)SMBJ43 MS CS 47.8 58.4 1.0 43 1.0 7.8 76.7
(+)SMBJ43A MT CT 47.8 52.8 1.0 43 1.0 8.6 69.4
(+)SMBJ45 MU MU 50.0 61.1 1.0 45 1.0 7.5 80.3
(+)SMBJ45A MV MV 50.0 55.3 1.0 45 1.0 8.3 72.7
(+)SMBJ48 MW MW 53.3 65.1 1.0 48 1.0 7.0 85.5
(+)SMBJ48A MX MX 53.3 58.9 1.0 48 1.0 7.8 77.4
(+)SMBJ51 MY MY 56.7 69.3 1.0 51 1.0 6.6 91.1
(+)SMBJ51A MZ MZ 56.7 62.7 1.0 51 1.0 7.3 82.4
(+)SMBJ54 ND ND 60.0 73.3 1.0 54 1.0 6.2 96.3
(+)SMBJ54A NE NE 60.0 66.3 1.0 54 1.0 6.9 87.1
(+)SMBJ58 NF NF 64.4 78.7 1.0 58 1.0 5.8 103
(+)SMBJ58A NG NG 64.4 71.2 1.0 58 1.0 6.4 93.6
(+)SMBJ60 NH NH 66.7 81.5 1.0 60 1.0 5.6 107
(+)SMBJ60A NK NK 66.7 73.7 1.0 60 1.0 6.2 96.8
(+)SMBJ64 NL NL 71.1 86.9 1.0 64 1.0 5.3 114
(+)SMBJ64A NM NM 71.1 78.6 1.0 64 1.0 5.8 103
(+)SMBJ70 NN NN 77.8 95.1 1.0 70 1.0 4.8 125
(+)SMBJ70A NP NP 77.8 86.0 1.0 70 1.0 5.3 113
(+)SMBJ75 NQ NQ 83.3 102 1.0 75 1.0 4.5 134
(+)SMBJ75A NR NR 83.3 92.1 1.0 75 1.0 5.0 121
(+)SMBJ78 NS NS 86.7 106 1.0 78 1.0 4.3 139
(+)SMBJ78A NT NT 86.7 95.8 1.0 78 1.0 4.8 126
(+)SMBJ85 NU NU 94.4 115 1.0 85 1.0 4.0 151
(+)SMBJ85A NV NV 94.4 104 1.0 85 1.0 4.4 137
(+)SMBJ90 NW NW 100 122 1.0 90 1.0 3.8 160
(+)SMBJ90A NX NX 100 111 1.0 90 1.0 4.1 146
(+)SMBJ100 NY NY 111 136 1.0 100 1.0 3.4 179
(+)SMBJ100A NZ NZ 111 123 1.0 100 1.0 3.7 162
(+)SMBJ110 PD PD 122 149 1.0 110 1.0 3.1 196
(+)SMBJ110A PE PE 122 135 1.0 110 1.0 3.4 177
(+)SMBJ120 PF PF 133 163 1.0 120 1.0 2.8 214
(+)SMBJ120A PG PG 133 147 1.0 120 1.0 3.1 193
(+)SMBJ130 PH PH 144 176 1.0 130 1.0 2.6 231
(+)SMBJ130A PK PK 144 159 1.0 130 1.0 2.9 209
(+)SMBJ150 PL PL 167 204 1.0 150 1.0 2.2 268
(+)SMBJ150A PM PM 167 185 1.0 150 1.0 2.5 243
(+)SMBJ160 PN PN 178 218 1.0 160 1.0 2.1 287
(+)SMBJ160A PP PP 178 197 1.0 160 1.0 2.3 259
(+)SMBJ170 PQ PQ 189 231 1.0 170 1.0 2.0 304
(+)SMBJ170A PR PR 189 209 1.0 170 1.0 2.2 275
SMBJ188 PT PT 209 255 1.0 188 1.0 1.7 344
SMBJ188A PS PS 209 231 1.0 188 1.0 2.0 328
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
“J” BEND LEAD
DEVICE MARKING
CODE
BREAKDOWN
VOLTAG E
V
BR
AT I
T
(1)
(V)
TEST
CURRENT
I
T
(mA)
STAND-OFF
VOLTAGE
V
WM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(µA)
(3)
MAXIMUM
PEAK PULSE
SURGE
CURRENT
I
PPM
(A)
(2)
MAXIMUM
CLAMPING
VOLTAG E AT
I
PPM
V
C
(V)
UNI BI
MIN. MAX.
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88392
Revision: 04-Sep-07
4
Note:
(1) Mounted on minimum recommended pad layout
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Typical thermal resistance, junction to ambient (1) RθJA 100 °C/W
Typical thermal resistance, junction to lead RθJL 20 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SMBJ5.0A-E3/52 0.096 52 750 7" diameter plastic tape and reel
SMBJ5.0A-E3/5B 0.096 5B 3200 13" diameter plastic tape and reel
SMBJ5.0AHE3/52 (1) 0.096 52 750 7" diameter plastic tape and reel
SMBJ5.0AHE3/5B (1) 0.096 5B 3200 13" diameter plastic tape and reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
0.1
1
10
100
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
P
PPM
- Peak Pulse Power (kW)
td - Pulse Width (s)
0 255075100
100
75
50
25
0
125 150 175 200
TJ - Initial Temperature (°C)
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
0
50
100
150
t
d
01.0 2.0 3.0 4.0
IPPM - Peak Pulse Current, % IRSM
t - Time (ms)
t
r
= 10 µs
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
10/1000 µs Waveform
as defined by R.E.A.
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
10
100
1000
6000
101 100 200
Uni-Directional
Bi-Directional
C
J
- Junction Capacitance (pF)
VWM - Reverse Stand-Off Voltage (V)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at
Zero Bias
VR, Measured at Stand-Off
Voltage VWM
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
Document Number: 88392
Revision: 04-Sep-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
5
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 5. Typical Transient Thermal Impedance
0.1
1.0
10
100
0.001 0.01 0.1 100 1.0 10 1000
t
p
- Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Figure 6. Maximum Non-Repetitive Peak Forward Surge Current
10
200
100
100101
8.3 ms Single Half Sine-Wave
Uni-Directional Only
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
DO-214AA (SMB-J-Bend) Mounting Pad Layout
0.160 (4.06)
0.180 (4.57)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.205 (5.21)
0.220 (5.59)
0 (0)
0.008 (0.2)
0.130 (3.30)
0.155 (3.94)
0.084 (2.13)
0.096 (2.44)
0.077 (1.95)
0.086 (2.20)
Cathode Band
0.085 (2.159)
MAX.
0.220 REF.
0.086 (2.18)
MIN.
0.060 (1.52)
MIN.
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Revision: 12-Mar-12 1Document Number: 91000
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