SMBJ5.0 thru SMBJ188CA Vishay General Semiconductor Surface Mount TRANSZORB(R) Transient Voltage Suppressors FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * Available in uni-directional and bi-directional * 600 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % * Excellent clamping capability * Very fast response time * Low incremental surge resistance * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC DO-214AA (SMB J-Bend) PRIMARY CHARACTERISTICS VWM 5.0 V to 188 V PPPM 600 W IFSM (uni-directional only) 100 A TJ max. 150 C DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional devices use C or CA suffix (e.g. SMBJ10CA). Electrical characteristics apply in both directions. TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. MECHANICAL DATA Case: DO-214AA (SMBJ) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, high reliability/ automotive grade (AEC Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 s waveform (1)(2) (Fig. 1) Peak pulse current with a 10/1000 s waveform (1) Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) Operating junction and storage temperature range SYMBOL VALUE UNIT PPPM 600 W IPPM See next table A IFSM 100 A TJ, TSTG - 55 to + 150 C Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 C per Fig. 2 (2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal Document Number: 88392 Revision: 04-Sep-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 SMBJ5.0 thru SMBJ188CA Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) DEVICE TYPE MODIFIED "J" BEND LEAD (+) SMBJ5.0 (+)SMBJ5.0A (5) (+) SMBJ6.0 SMBJ6.0A (+) SMBJ6.5 (+) SMBJ6.5A (+) SMBJ7.0 (+) SMBJ7.0A (+) SMBJ7.5 (+) SMBJ7.5A (+) SMBJ8.0 (+) SMBJ8.0A (+)SMBJ8.5 (+)SMBJ8.5A (+)SMBJ9.0 (+) SMBJ9.0A (+)SMBJ10 (+) SMBJ10A (+) SMBJ11 (+)SMBJ11A (+) SMBJ12 (+)SMBJ12A (+) SMBJ13 (+)SMBJ13A (+)SMBJ14 (+) SMBJ14A (+)SMBJ15 (+) SMBJ15A (+)SMBJ16 (+)SMBJ16A (+)SMBJ17 (+) SMBJ17A (+) SMBJ18 (+)SMBJ18A (+) SMBJ20 (+)SMBJ20A (+) SMBJ22 (+) SMBJ22A (+)SMBJ24 (+) SMBJ24A (+)SMBJ26 (+) SMBJ26A (+) SMBJ28 (+)SMBJ28A (+) SMBJ30 (+) SMBJ30A (+)SMBJ33 (+) SMBJ33A (+) SMBJ36 (+) SMBJ36A (+)SMBJ40 (+) SMBJ40A (+) www.vishay.com 2 DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR AT IT (1) (V) UNI BI MIN. MAX. KD KE KF KG KH KK KL KM KN KP KQ KR KS KT KU KV KW KX KY KZ LD LE LF LG LH LK LL LM LN LP LQ LR LS LT LU LV LW LX LY LZ MD ME MF MG MH MK ML MM MN MP MQ MR KD KE KF KG AH AK KL KM AN AP AQ AR AS AT AU AV AW AX KY KZ BD BE LF LG BH BK BL BM LN LM LQ LR BS BT LU LV BW BX BY BZ CD CE MF MG CH CK CL CM CN CP CQ CR 6.40 6.40 6.67 6.67 7.22 7.22 7.78 7.78 8.33 8.33 8.89 8.89 9.44 9.44 10.0 10.0 11.1 11.1 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20.0 20.0 22.2 22.2 24.4 24.4 26.7 26.7 28.9 28.9 31.1 31.1 33.3 33.3 36.7 36.7 40.0 40.0 44.4 44.4 7.82 7.07 8.15 7.37 8.82 7.98 9.51 8.60 10.2 9.21 10.9 9.83 11.5 10.4 12.2 11.1 13.6 12.3 14.9 13.5 16.3 14.7 17.6 15.9 19.1 17.2 20.4 18.5 21.8 19.7 23.1 20.9 24.4 22.1 27.1 24.5 29.8 26.9 32.6 29.5 35.3 31.9 38.0 34.4 40.7 36.8 44.9 40.6 48.9 44.2 54.3 49.1 TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) 10 10 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.0 5.0 6.0 6.0 6.5 6.5 7.0 7.0 7.5 7.5 8.0 8.0 8.5 8.5 9.0 9.0 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 24 26 26 28 28 30 30 33 33 36 36 40 40 MAXIMUM REVERSE LEAKAGE AT VWM MAXIMUM PEAK PULSE SURGE CURRENT ID (A) (3) IPPM (A) (2) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 800 800 800 800 500 500 200 200 100 100 50 50 20 20 10 10 5.0 5.0 5.0 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 62.5 65.2 52.6 58.3 48.8 53.6 45.1 50.0 42.0 46.5 40.0 44.1 37.7 41.7 35.5 39.0 31.9 35.3 29.9 33.0 27.3 30.2 25.2 27.9 23.3 25.9 22.3 24.6 20.8 23.1 19.7 21.7 18.6 20.5 16.8 18.5 15.2 16.9 14.0 15.4 12.9 14.3 12.0 13.2 11.2 12.4 10.2 11.3 9.3 10.3 8.4 9.3 9.6 9.2 11.4 10.3 12.3 11.2 13.3 12.0 14.3 12.9 15.0 13.6 15.9 14.4 16.9 15.4 18.8 17.0 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 46.6 42.1 50.0 45.4 53.5 48.4 59.0 53.3 64.3 58.1 71.4 64.5 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88392 Revision: 04-Sep-07 SMBJ5.0 thru SMBJ188CA Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) DEVICE TYPE MODIFIED "J" BEND LEAD (+) SMBJ43 (+)SMBJ43A (+) SMBJ45 (+)SMBJ45A (+) SMBJ48 (+)SMBJ48A (+)SMBJ51 (+) SMBJ51A SMBJ54 (+) SMBJ54A (+)SMBJ58 (+)SMBJ58A (+) SMBJ60 (+) SMBJ60A (+) SMBJ64 (+)SMBJ64A (+)SMBJ70 (+)SMBJ70A (+)SMBJ75 (+) SMBJ75A (+) SMBJ78 (+)SMBJ78A (+)SMBJ85 (+)SMBJ85A (+) SMBJ90 (+)SMBJ90A (+) SMBJ100 (+) SMBJ100A (+)SMBJ110 (+) SMBJ110A (+)SMBJ120 (+) SMBJ120A (+)SMBJ130 (+) SMBJ130A (+) SMBJ150 (+) SMBJ150A (+) SMBJ160 (+)SMBJ160A (+) SMBJ170 (+)SMBJ170A SMBJ188 SMBJ188A (+) DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR AT IT (1) (V) UNI BI MIN. MAX. MS MT MU MV MW MX MY MZ ND NE NF NG NH NK NL NM NN NP NQ NR NS NT NU NV NW NX NY NZ PD PE PF PG PH PK PL PM PN PP PQ PR PT PS CS CT MU MV MW MX MY MZ ND NE NF NG NH NK NL NM NN NP NQ NR NS NT NU NV NW NX NY NZ PD PE PF PG PH PK PL PM PN PP PQ PR PT PS 47.8 47.8 50.0 50.0 53.3 53.3 56.7 56.7 60.0 60.0 64.4 64.4 66.7 66.7 71.1 71.1 77.8 77.8 83.3 83.3 86.7 86.7 94.4 94.4 100 100 111 111 122 122 133 133 144 144 167 167 178 178 189 189 209 209 58.4 52.8 61.1 55.3 65.1 58.9 69.3 62.7 73.3 66.3 78.7 71.2 81.5 73.7 86.9 78.6 95.1 86.0 102 92.1 106 95.8 115 104 122 111 136 123 149 135 163 147 176 159 204 185 218 197 231 209 255 231 TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 43 43 45 45 48 48 51 51 54 54 58 58 60 60 64 64 70 70 75 75 78 78 85 85 90 90 100 100 110 110 120 120 130 130 150 150 160 160 170 170 188 188 MAXIMUM REVERSE LEAKAGE AT VWM MAXIMUM PEAK PULSE SURGE CURRENT ID (A) (3) IPPM (A) (2) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 7.8 8.6 7.5 8.3 7.0 7.8 6.6 7.3 6.2 6.9 5.8 6.4 5.6 6.2 5.3 5.8 4.8 5.3 4.5 5.0 4.3 4.8 4.0 4.4 3.8 4.1 3.4 3.7 3.1 3.4 2.8 3.1 2.6 2.9 2.2 2.5 2.1 2.3 2.0 2.2 1.7 2.0 76.7 69.4 80.3 72.7 85.5 77.4 91.1 82.4 96.3 87.1 103 93.6 107 96.8 114 103 125 113 134 121 139 126 151 137 160 146 179 162 196 177 214 193 231 209 268 243 287 259 304 275 344 328 Notes: (1) Pulse test: tp 50 ms (2) Surge current waveform per Fig. 3 and derate per Fig. 2 (3) For bi-directional types having VWM of 10 V and less, the ID limit is doubled (4) All terms and symbols are consistent with ANSI/IEEE C62.35 (5) For the bi-directional SMBG/SMBJ5.0CA, the maximum VBR is 7.25 V (6) VF = 3.5 V at IF = 50 A (uni-directional only) (+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both uni-directional and bi-directional devices Document Number: 88392 Revision: 04-Sep-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 SMBJ5.0 thru SMBJ188CA Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Typical thermal resistance, junction to ambient SYMBOL VALUE UNIT RJA 100 C/W RJL 20 C/W (1) Typical thermal resistance, junction to lead Note: (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SMBJ5.0A-E3/52 0.096 52 750 7" diameter plastic tape and reel SMBJ5.0A-E3/5B 0.096 5B 3200 13" diameter plastic tape and reel SMBJ5.0AHE3/52 (1) 0.096 52 750 7" diameter plastic tape and reel SMBJ5.0AHE3/5B (1) 0.096 5B 3200 13" diameter plastic tape and reel Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 150 10 1 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 s TJ = 25 C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 s Peak Value IPPM 100 Half Value - IPP IPPM 2 50 10/1000 s Waveform as defined by R.E.A. td 0 1.0 s 10 s 100 s 1.0 ms 10 ms 0 1.0 3.0 2.0 td - Pulse Width (s) t - Time (ms) Figure 1. Peak Pulse Power Rating Curve Figure 3. Pulse Waveform 100 4.0 6000 CJ - Junction Capacitance (pF) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) 100 75 50 25 0 Measured at Zero Bias 1000 VR, Measured at Stand-Off Voltage VWM 100 Uni-Directional Bi-Directional TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 10 0 25 50 75 100 125 150 175 200 1 10 100 TJ - Initial Temperature (C) VWM - Reverse Stand-Off Voltage (V) Figure 2. Pulse Power or Current vs. Initial Junction Temperature Figure 4. Typical Junction Capacitance www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 200 Document Number: 88392 Revision: 04-Sep-07 SMBJ5.0 thru SMBJ188CA Vishay General Semiconductor 200 Peak Forward Surge Current (A) Transient Thermal Impedance (C/W) 100 10 1.0 0.1 0.001 8.3 ms Single Half Sine-Wave Uni-Directional Only 100 10 0.01 0.1 1.0 10 100 1000 1 10 100 tp - Pulse Duration (s) Number of Cycles at 60 Hz Figure 5. Typical Transient Thermal Impedance Figure 6. Maximum Non-Repetitive Peak Forward Surge Current PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB-J-Bend) Mounting Pad Layout Cathode Band 0.085 (2.159) MAX. 0.086 (2.20) 0.155 (3.94) 0.130 (3.30) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.220 REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Document Number: 88392 Revision: 04-Sep-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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