IN2IN1
NC NC
GND V+ Substrate
NC NC
S2
D1
D2
S1
V– NC
Dual-In-Line
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Metal Can
NC
Top View
D1
V–
S1
IN1
V+ (Substrate and Case)
IN2
GND
S2D2
1
2
3
456
7
8
9
10
DG200A
Siliconix
S-52880—Rev. B, 28-Apr-97 1
Monolithic Dual SPST CMOS Analog Switch
Features Benefits Applications
15 V Input Signal Range
44-V Maximum Supply Ranges
On-Resistance: 45
TTL and CMOS Compatibility
Wide Dynamic Range
Simple Interfacing
Reduced External Component Count
Servo Control Switching
Programmable Gain Amplifiers
Audio Switching
Programmable Filters
Description
The DG200A is a dual, single-pole, single-throw analog
switch designed to provide general purpose switching of
analog signals. This device is ideally suited for designs
requiring a wide analog voltage range coupled with low
on-resistance.
The DG200A is designed on Siliconix’ improved PLUS-40
CMOS process. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks up to 30 V peak-to-peak when off. In the on
condition, this bi-directional switch introduces no offset
voltage of its own.
Functional Block Diagram and Pin Configuration
Truth Table
Logic Switch
0 ON
1 OFF
Logic “0” 0.8 V
L i “1” 24V
g
Logic “1” 2.4 V
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70035.
DG200A
2 Siliconix
S-52880—Rev. B, 28-Apr-97
Ordering Information
Temp Range Package Part Number
0 to 70_C14-Pin Plastic DIP DG200ACJ
–
25 to 85
_
C
14-Pin CerDIP DG200ABK
–
25
t
o
85_C
10-Pin Metal Can DG200ABA
DG200AAK
14-Pin CerDIP DG200AAK/883,
JM38510/12301BCA
–55 to 125_CDG200AAA
10-Pin Metal Can DG200AAA/883,
JM38510/12301BIC
14-Pin Sidebraze JM38510/12301BCC
Absolute Maximum Ratings
V+ to V– 44 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND to V– 25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputsa, VS, VD(V–) –2 V to (V+) +2 V or. . . . . . . . . . . . . . . .
30 mA, whichever occurs first
Current (Any Terminal) Continuous 30 mA. . . . . . . . . . . . . . . . . . . . . .
Current S or D
(Pulsed at 1 ms, 10% Duty Cycle Max) 100 mA. . . . . . . . . . . . . . . . . . .
Storage Temperature (AX, BX Suffix) –65 to 150_C. . . . . . . . . .
(CJ Suffix) –65 to 125_C. . . . . . . . . . . . . . .
Power Dissipation (Package)b
10-Pin Metal Canc450 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14-Pin CerDIPd825 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14-Pin Plastic DIPe470 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by
internal diodes. Limit forward diode current to maximum current
ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/_C above 75_C
d. Derate 11 mW/_C above 75_C
e. Derate 6.5 mW/_C above 25_C
Schematic Diagram (Typical Channel)
Fi
g
ure 1.
V+
INX
V–
GND
–
+
S
D
V–
V+
DG200A
Siliconix
S-52880—Rev. B, 28-Apr-97 3
Specificationsa
Test Conditions
Unless Otherwise Specified
V15VV 15V
A Suffix
–55 to 125_CB, C Suffix
Parameter Symbol V+ = 15 V, V– = –15 V
VIN = 2.4 V, 0.8 VfTempbTypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full –15 15 –15 15 V
Drain-Source
On-Resistance rDS(on) VD = 10 V, IS = –1 mA Room
Full 45 70
100 80
100 W
Source Off
Leakage Current IS(off) VS = 14 V, VD = 14 V Room
Full 0.01 –2
–100 2
100 –5
–100 5
100
Drain Off
Leakage Current ID(off) VD = 14 V, VS = 14 V Room
Full 0.01 –2
–100 2
100 –5
–100 5
100 nA
Channel On
Leakage CurrentfID(on) VS = VD = 14 V Room
Full 0.1 –2
–200 2
200 –5
–200 5
200
Digital Control
Input Current with
IVlHih
IINH
VIN = 2.4 V Room
Full 0.0009 –0.5
–1 –1
–10
p
Input Voltage High
I
INH VIN = 15 V Room
Full 0.005 0.5
11
10 mA
Input Current with
Input Voltage Low IINL VIN = 0 V Room
Full –0.0015 –0.5
–1 –1
–10
Dynamic Characteristics
Turn-On Time tON
See Switching Time Test Circuit
Room 440 1000 1000
ns
Turn-Off Time tOFF
S
ee
S
w
it
c
hi
ng
Ti
me
T
es
t
Ci
rcu
it
Room 340 425 425 ns
Charge Injection Q CL = 1000 pF, Vg = 0 V
Rg = 0 WRoom –10 pC
Source-Off Capacitance CS(off) f = 140 kHz
V5V
VS = 0 V Room 9
Drain-Off Capacitance CD(off) VIN = 5 V VD = 0 V Room 9
p
F
Channel-On Capacitance CD(on) +
CS(On) VD = VS = 0 V, VIN = 0 V Room 25
pF
Off Isolation OIRR
VIN =5VR
L=75W
Room 75
Crosstalk
(Channel-to-Channel) XTALK
V
IN =
5
V
,
R
L =
75
W
VS = 2 V, f = 1 MHz Room 90 dB
Power Supplies
Positive Supply Current I+ Both Channels On or Off
V0Vd24V
Room 0.8 2 2
mA
Negative Supply Current I– VIN = 0 V and 2.4 V Room –0.23 –1 –1
mA
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is aminimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
DG200A
4 Siliconix
S-52880—Rev. B, 28-Apr-97
Typical Characteristics
Leakage Currents vs. Analog VoltagerDS(on) vs. VD and Power Supply Voltage
rDS(on) ()
(pA)I , I
SD
V
D
– Drain Voltage (V) VANALOG – Analog Voltage (V)
120
–15
D
C
+6
–15
E
015
100
80
60
40
20 015
0
–6
–12
–18
–24
ID(off) or IS(off)
ID(on)
_
A: 5 V
B: 10 V
C: 12 V
D: 15 V
E: 20 V
–12 –6 6 1293–3–9 –12 –9 –6 –3 3 6 9 12
B
A
Supply Currents vs. Toggle FrequencyInput Switching Threshold vs. V+ and V– Supply Voltages
V+, V– Positive and Negative Supplies (V) Toggle Frequency (Hz)
(V)
T
V
I+, I– (mA)
6
2.5
0
2.0
1.5
1.0
0.5
0
5
4
3
2
1
0
510 15 20
I+
I–
V+ = 15 V
V– = –15 V
Both logic inputs
toggled simutaneously
1 k 10 k 100 k 1 M
DG200A
Siliconix
S-52880—Rev. B, 28-Apr-97 5
Test Circuits
Figure 2. Switching Time
Figure 3. Charge Injection
CL
1000 pF
Vg3 V
D
V+
V–
Rg
–15 V
GND
IN
SVO
+15 V
VO
DVO
INXON ONOFF
DVO = measured voltage error due to charge injection
The charge injection in coulombs is DQ = CL x DVO
VO is the steady state output with switch on. Feedthrough via gate capacitance may result in spikes at leading and trailing edge of output waveform.
50%
0 V
3 V
tOFF
tON
VO
VS
tr <20 ns
tf <20 ns
Logic
Input
Switch
Input
Switch
Output
90%
CL
35 pF
RL
1 kW
VO = VSRL + rDS(on)
RL
VS = +5 V VO
V–
V+
IN
SD
3 V
–15 V
GND
+15 V
Figure 4. Off Isolation
S
IN RL
D
Rg = 50 W
VSVO
5 V
Off Isolation = 20 log VS
VO
V+
–15 V
GND V– C
C
+15 V
IN1
0V
VO
+15 V
–15 V
GND
RL
V+
V–
NC
XTALK = 20 log
C
VS
C
VO
0V
50 W
VSS1
IN2
S2
Rg = 50 W
D1
D2
C = RF bypass
Figure 5. Channel-to-Channel Crosstalk