GH5R385C3C0F - Sharp Electronics Corp.

Notice In t h e a b s e n c e o f c o n firmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP

devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

Internet Internet address for Electronic Components Group http://sharp-world.com/ecg/

GH5R385C3CHologram Lasers

Hologram device

Cap glass

Laser chip

Reference plane

1.27

0.25

4.8

–

0.1

❇P1.1±0.15◊4=4.4±0.15

ø8.2 +

–0

0.025

ø8.2 +

–0

0.025

ø6.63±0.1

3.2±0.15

4.9±0.2

4.77±

0.12

4.6±

0.5

2.8±

0.2 2.0±0.1

1.2±

0.1

12-ø0.3±0.05

ø7.5

MAX.

0.3

MAX.

3.97±0.1

4.8+

–0

0.1

2.8±0.15

❇Dimension measured at

lead base

Tolerance ±0.2mm

Vcc

GND

E+G

Vref

D4 D1D2D5D6D7D8

F+H

TAO

Swin

!11

❇TAO output adjusts electric off-set of

output signals caused by temperature

in hologram laser.

GH5R385C3C

■Outline Dimensions

High Power Output Hologram

Laser for ✕12 Speed CD-R Drive

!2 y

!0oiu

trewq

Top View

Terminal connection Pin configuration

(Unit : mm)

■Features

(1) High power output (pulse MAX. 108mW)

(2) For ◊12 speed CD-R, ◊24 to ◊32 speed CD-ROM

(With built-in MIN. 30MHz OPIC❇)

(3) φ4.8mm thickness package

(4) With built-in beam splitter and diffraction grating

❇OPIC : (Optical IC) is a trademark of SHARP Corporation.

An OPIC consists of a light-detecting element

and a signal-processing circuit integrated onto a

single chip.

■Applications

(1) CD-R drives

(2) CD-RW drives

■Absolute Maximum Ratings (TC=25˚C)

Parameter Symbol Rating Unit

❇1Optical power output PHC 76 mW

❇2Optical power output (pulse) PHP 108 mW

❇3Operating temperature Topr 0 to +60 ˚C

❇3Storage temperature Tstg -40 to +85 ˚C

❇4Soldering temperature Tsold 260 ˚C

❇1Output power from hologram laser Equivalent to 85mW (CW) from cap glass

❇2Output power from hologram laser Equivalent to 120mW (pulse) from cap glass

❇3Case temperature ❇4At the position of 1.6mm from the lead base (Within 5s)

Laser 2

OPIC supply voltage VCC 8V

VReverse voltage VR

GH5R385C3CHologram Lasers

■Electro-optical Characteristics (TC=25˚C)

Parameter Symbol MAX. Unit

❇1Focal offset DEF +0.7 µm

❇6RES output amplitude VRES 0.29 V

Differential efficiency ηd1.2 mW/mA

Conditions MIN. TYP.

Collimated lens output power

1.5mW, High gain -0.7 -

0.09 0.18

75mW

I(85mW)-I(10mW) 0.55 0.9

❇2Focal error symmetry BFES Collimated lens output power

1.5mW, High gain -25 - +25 %

❇3Radial error balance BRES -25 - +25 %

❇5FES output amplitude VFES 0.34 0.57 0.90 V

Collimated lens output power

1.5mW, High gain

❇4RF output amplitude VRFH Collimated lens output power

1.5mW, High gain 0.61 0.90 1.06 V

Collimated lens output power

1.5mW, High gain

Collimated lens output power

1.5mW, High gain

❇7Main spot balance MSB Collimated lens output power

1.5mW, High gain 0.8 1.0 1.2 -

❇8Sub spot balance SSB Collimated lens output power

1.5mW, High gain 0.8 1.0 1.2 -

❇1Distance between FES=0 and jitter minimum point

❇2(a–b) / (a+b) ❇3

❇4Amplitude of VA+VB+VC+VD(focal servo ON, radial servo ON)

❇5VA–VB(Focal vibration)

❇6

Amplitude of (V

–V

)–k1(V

–V

). k1=(V

)/(V

E+G

F+H

)=1

When tracking servo is ON, (V

–V

)–k1(V

–V

)+αshould be 0.

❇7(VA+VB) / (VC+VD)

❇8VC/VD

a–b

2◊(a+b)

a (+amplitude of RES)

b (–amplitude of RES)

GND

a (+amplitude of FES)

b (–amplitude of FES)

Jitter JIT Collimated lens output power

1.5mW, High gain --23ns

Threshold current Ith −-3040mA

Operating current Iop Po=85mW - 127 155 mA

Operating voltage Vop Po=85mW - 2.1 2.65 V

Wavelength λpPo=85mW 773 785 797 nm

Notice In t h e a b s e n c e o f c o n firmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP

devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

Internet Internet address for Electronic Components Group http://sharp-world.com/ecg/

GH5R385C3CHologram Lasers

■Electro-optical Characteristics of Laser Diode (Design Standard*) (TC=25˚C)

Parameter Symbol MAX. Unit

Half intensity angle

ø⊥+3 ˚

K-LI1 - -

Kink K-LI2 15 %

Conditions MIN. TYP.

-3 -

0.988 -

P1=24mW, P2=72mW, P3=120mW - -

∆ø// -1 - +1 ˚

Po=85mW

Parameter Symbol Unit

❇9

Segment

Supply voltage VCC V

Off-set voltage difference, Gain switching

∆Vod mV A, B

Conditions MIN. TYP.

4.5 5

-30 -

❇9Applicable divisions correspond to output terminals.

A : VA, VB, VC, VD

B : VE+G, VF+H

❇10 Difference from Vref

MAX.

5.5

Reference voltage Vref 2.00 2.1 2.21 V

Supply current ICC1 High gain, Gain switching SW=H - 20 25 mA

-3035mA

Common to high/low gain +30

1.8 2.2 2.6 VTao

ICC2

θ// 8912˚

θ⊥ 17.1 21 25.5 ˚

ø// -2 - +2 ˚

Beam shift ø//(85mW)-ø//(3mW)

Po=10 to 120mW

■Electro-optical Characteristics of OPIC for Signal Detection (Design Standard*)

(TC=25˚C, VCC=5V, Vref=2.1V)

Low gain, Gain switching SW=L

Output terminal current IOCommon to high/low gain -0.03 0.01 +0.3 mA A, B

Reference voltage terminal current

Iref Common to high/low gain, No light -0.5 1 +2 mA

❇10 Output off-set voltage Vod Common to high/low gain, No light -25 2 +25 mV A, B

Output terminal voltage of temperature sensor

Common to high/low gain

Parallel

Perpendicular

Emission

characteristics Deviation

angle Parallel

Perpendicular

* These parameters are not guaranteed performance, but general specifications of each optical element which makes up a hologram laser.

Notice In t h e a b s e n c e o f c o n firmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP

devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

Internet Internet address for Electronic Components Group http://sharp-world.com/ecg/

100

Notice In t h e a b s e n c e o f c o n firmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP

devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

Internet Internet address for Electronic Components Group http://sharp-world.com/ecg/

GH5R385C3CHologram Lasers

■Electro-optical Characteristics of Hologram Laser (Design Standard*)❇1(TC=25˚C)

❇1

Parameter Symbol MAX. Unit

❇2Focal error signal capture range --

µm

Conditions MIN. TYP.

-14

Focal error signal sensitivity - 20 %/µm

-−

−

Parameter Symbol MAX. UnitConditions MIN. TYP.

■Optical Characteristics of Hologram Device (Design Standard*) (TC=25˚C)

Parameter Symbol MAX. Unit

--˚

13.4

Conditions MIN. TYP.

- 26.4

Grating diffraction efficiency 7.7 10 --0:1

Grating diffraction angle - λ=780nm -2.8- ˚

NA=0.50

f =3.0mm

NA=0.186

f =10.74mm

Disc

(SONY : YEDS-18)

Actuator

Collimated lens

Hologram laser

Laser driver

ACC drive

Measuring System of Hologram Laser

❇2

Hologram diffraction

efficiency -λ=780nm 77 80 - %

-7810%

Hologram diffraction

angle -λ=780nm - 21.1 - ˚

0 th

D1,D2

±1st

Except D1, D2

■Electro-optical Characteristics of Laser Diode (Design Standard*) (TC=25˚C)

Misalignment position ∆x−-80 - +80 µm

∆y-80 - +80 µm

∆z-80 - +80 µm

* These parameters are not guaranteed performance, but general specifications of each optical element which makes up a hologram laser.

101

GH5R385C3CHologram Lasers

■

Electro-optical Characteristics of OPIC for Signal Detection (Design Standard*)

(TC=25˚C, VCC=5V, Vref=2.1V)

Parameter Symbol Unit

❇3

Segment

Conditions MIN. TYP. MAX.

❇4,5,6,7

Response frequency fcm Common to high/low gain, -3dB 30 36 - MHz A

fcs Common to high/low gain, -3dB 1 2 - MHz A

❇

6,7

Peaking level Vpk2Common to high/low gain

f=0.1 to 30MHz --3dBA

❇7Noise level fnm Hign gain, 50 Ωend

BW=30MHz, f=17.3MHz - -74 -68 dBm A

Sensitivity 1 Rm1 Main amp, Hign gain 18 24 30 mV/µWA

Sensitivity 2 Rm2 Main amp, Low gain 0.72 6.96 7.1 mV/µWA

Sensitivity 3 Rm3Sub amp, Hign gain 72 96 120 mV/µWB

Sensitivity 4 Rm4Sub amp, Low gain 2.88 3.84 48 mV/µWB

❇3Appricable divisions correspond to output terminals.

A : VA, VB, VC, VD

B : VE+G+VF+H

❇4Light source is a laser diode of λ=780nm.

❇5-3dB level (0dB level is taken for output level when f=0.1MHz)

❇610µW of DC light is applied to the center of each photodiode, and 4µW of AC light is irradiated. BW=10kHz

❇710kΩof resistor and 10pF of capacitor should be connected in parallel between output terminal and Vref terminal.

* These parameters are not guaranteed performance, but general specifications of each optical element which makes up a hologram laser.

• Please refer to the chapter "Handling Precautions"

Notice In t h e a b s e n c e o f c o n firmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP

devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

Internet Internet address for Electronic Components Group http://sharp-world.com/ecg/

115

Application Circuits

NOTICE

●The circuit application examples in this publication are provided to explain representative applications

of SHARP devices and are not intended to guarantee any circuit design or license any intellectual

property rights. SHARP takes no responsibility for any problems related to any intellectual property

right of a third party resulting from the use of SHARP's devices.

●Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

SHARP reserves the right to make changes in the specifications, characteristics, data, materials,

structure, and other contents described herein at any time without notice in order to improve design or

reliability. Manufacturing locations are also subject to change without notice.

●Observe the following points when using any devices in this publication. SHARP takes no responsibility

for damage caused by improper use of the devices which does not meet the conditions and absolute

maximum ratings to be used specified in the relevant specification sheet nor meet the following

conditions:

(i) The devices in this publication are designed for use in general electronic equipment designs such as:

--- Personal computers

--- Office automation equipment

--- Telecommunication equipment [terminal]

--- Test and measurement equipment

--- Industrial control

--- Audio visual equipment

--- Consumer electronics

(ii)Measures such as fail-safe function and redundant design should be taken to ensure reliability and

safety when SHARP devices are used for or in connection with equipment that requires higher

reliability such as:

--- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.)

--- Traffic signals

--- Gas leakage sensor breakers

--- Alarm equipment

--- Various safety devices, etc.

(iii)SHARP devices shall not be used for or in connection with equipment that requires an extremely

high level of reliability and safety such as:

--- Space applications

--- Telecommunication equipment [trunk lines]

--- Nuclear power control equipment

--- Medical and other life support equipment (e.g., scuba).

●Contact a SHARP representative in advance when intending to use SHARP devices for any "specific"

applications other than those recommended by SHARP or when it is unclear which category mentioned

above controls the intended use.

●If the SHARP devices listed in this publication fall within the scope of strategic products described in

the Foreign Exchange and Foreign Trade Control Law of Japan, it is necessary to obtain approval to

export such SHARP devices.

the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any

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●Contact and consult with a SHARP representative if there are any questions about the contents of this

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