DTA044T series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) l Outline Parameter VCEO Value -50V IC -60mA R1 47k VMT3 EMT3F DTA044TM (SC-105AA) DTA044TEB (SC-89) UMT3F l Features 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary NPN Types: DTC044T series 6) Lead Free/RoHS Compliant. DTA044TUB (SC-85) l Inner circuit l Application Switching circuit, Inverter circuit, Interface circuit, B: BASE C: COLLECTOR E: EMITTER Driver circuit l Packaging specifications Part No. DTA044TM DTA044TEB DTA044TUB Package Package size Taping code VMT3 EMT3F UMT3F 1212 1616 2021 T2L TL TL www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. Reel size Tape width (mm) (mm) 180 180 180 1/6 8 8 8 Basic ordering unit.(pcs) Marking 8000 3000 3000 08 08 08 20130530 - Rev.002 DTA044T series Datasheet l Absolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V IC -60 mA Collector current DTA044TM Power dissipation 150 PD*1 DTA044TEB 150 DTA044TUB mW 200 Junction temperature Range of storage temperature Tj 150 Tstg -55 to +150 l Electrical characteristics (Ta = 25C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = -50A -50 - - V Collector-emitter breakdown voltage BVCEO IC = -1mA -50 - - V Emitter-base breakdown voltage BVEBO IE = -50A -5 - - V Collector cut-off current ICBO VCB = -50V - - -0.5 A Emitter cut-off current IEBO VEB = -4V - - -0.5 A IC / IB = -5mA / -0.5mA - -0.07 -0.15 V 100 - 600 - 32.9 47 61.1 k - 250 - MHz Collector-emitter saturation voltage VCE(sat) DC current gain hFE Input resistance R1 Transition frequency f T*2 VCE = -10V, IC = -5mA VCE = -10V, IE = 5mA, f = 100MHz *1 Each terminal mounted on a reference footprint *2 Characteristics of built-in transistor www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 2/6 20130530 - Rev.002 DTA044T series Datasheet l Electrical characteristic curves (Ta =25C) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC Current gain vs. Collector Current Fig.4 Collector-emitter saturation voltage vs. Collector Current www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 3/6 20130530 - Rev.002 DTA044T series Datasheet l Dimensions www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 4/6 20130530 - Rev.002 DTA044T series Datasheet l Dimensions www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 5/6 20130530 - Rev.002 DTA044T series Datasheet l Dimensions www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 6/6 20130530 - Rev.002 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ROHM Semiconductor: DTA044TMT2L DTA044TUBTL DTA044TEBTL