DTA044T series
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
llOutline
Parameter Value VMT3 EMT3F
VCEO -50V
IC-60mA
R147kΩ DTA044TM DTA044TEB
(SC-105AA) (SC-89)
UMT3F
llFeatures
1) Built-In Biasing Resistor
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit) .
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set
for operation, making the circuit design easy.
5) Complementary NPN Types: DTC044T series
6) Lead Free/RoHS Compliant.
DTA044TUB
(SC-85)
llInner circuit
llApplication B: BASE
Switching circuit, Inverter circuit, Interface circuit, C: COLLECTOR
Driver circuit E: EMITTER
llPackaging specifications
Part No. Package Package
size
Taping
code
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit.(pcs)
Marking
DTA044TM VMT3 1212 T2L 180 8 8000 08
DTA044TEB EMT3F 1616 TL 180 8 3000 08
DTA044TUB UMT3F 2021 TL 180 8 3000 08
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© 2013 ROHM Co., Ltd. All rights reserved. 1/6 20130530 - Rev.002
DTA044T series Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol Values Unit
Collector-base voltage VCBO -50 V
Collector-emitter voltage VCEO -50 V
Emitter-base voltage VEBO -5 V
Collector current IC-60 mA
Power dissipation
DTA044TM
PD*1
150
mW DTA044TEB 150
DTA044TUB 200
Junction temperature Tj150 ℃
Range of storage temperature Tstg -55 to +150 ℃
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown
voltage BVCBO IC = -50μA -50 - - V
Collector-emitter breakdown
voltage BVCEO IC = -1mA -50 - - V
Emitter-base breakdown voltage BVEBO IE = -50μA -5 - - V
Collector cut-off current ICBO VCB = -50V - - -0.5 μA
Emitter cut-off current IEBO VEB = -4V - - -0.5 μA
Collector-emitter saturation voltage VCE(sat) IC / IB = -5mA / -0.5mA - -0.07 -0.15 V
DC current gain hFE VCE = -10V, IC = -5mA 100 - 600 -
Input resistance R1- 32.9 47 61.1 kΩ
Transition frequency fT*2 VCE = -10V, IE = 5mA,
f = 100MHz - 250 - MHz
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
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© 2013 ROHM Co., Ltd. All rights reserved. 2/6 20130530 - Rev.002
DTA044T series Datasheet
llElectrical characteristic curves (Ta =25°C)
Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics
Fig.3 DC Current gain vs. Collector Current Fig.4 Collector-emitter saturation voltage vs.
Collector Current
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© 2013 ROHM Co., Ltd. All rights reserved. 3/6 20130530 - Rev.002
DTA044T series Datasheet
llDimensions
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© 2013 ROHM Co., Ltd. All rights reserved. 4/6 20130530 - Rev.002
DTA044T series Datasheet
llDimensions
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© 2013 ROHM Co., Ltd. All rights reserved. 5/6 20130530 - Rev.002
DTA044T series Datasheet
llDimensions
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved. 6/6 20130530 - Rev.002
