DTA044T series Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol Values Unit
Collector-base voltage VCBO -50 V
Collector-emitter voltage VCEO -50 V
Emitter-base voltage VEBO -5 V
Collector current IC-60 mA
Power dissipation
DTA044TM
PD*1
150
mW DTA044TEB 150
DTA044TUB 200
Junction temperature Tj150 ℃
Range of storage temperature Tstg -55 to +150 ℃
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown
voltage BVCBO IC = -50μA -50 - - V
Collector-emitter breakdown
voltage BVCEO IC = -1mA -50 - - V
Emitter-base breakdown voltage BVEBO IE = -50μA -5 - - V
Collector cut-off current ICBO VCB = -50V - - -0.5 μA
Emitter cut-off current IEBO VEB = -4V - - -0.5 μA
Collector-emitter saturation voltage VCE(sat) IC / IB = -5mA / -0.5mA - -0.07 -0.15 V
DC current gain hFE VCE = -10V, IC = -5mA 100 - 600 -
Input resistance R1- 32.9 47 61.1 kΩ
Transition frequency fT*2 VCE = -10V, IE = 5mA,
f = 100MHz - 250 - MHz
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
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