UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES *Low saturation voltage VCE(SAT)= 0.5V (Max.) *High speed switching time tstg=1.0s (Typ.) 1 TO-92NL *Pb-free plating product number: 2SC2655L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SC2655-x-T9N-B 2SC2655L-x-T9N-B 2SC2655-x-T9N-K 2SC2655L-x-T9N-K 2SC2655-x-T9N-R 2SC2655L-x-T9N-R Package TO-92NL TO-92NL TO-92NL Pin Assignment 1 2 3 E C B E C B E C B Packing Tape Box Bulk Tape Reel 2C2655L-x-T9N-K (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd (1) B: Tape Box, K: Bulk, R: Tape Reel (2) T9N: TO-92NL (3) refer to Classification of hFE(1) (4) L: Lead Free Plating, Blank: Pb/Sn 1 of 4 QW-R211-013,C 2SC2655 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current Ic 2 A Collector Current(Pulse) Icp* 3 A Base Current IB 0.5 A Collector Power Dissipation Pc 900 mW Junction Temperature TJ 150 C Storage Temperature TSTG -55 ~ +150 C Note: * PW16ms, Duty Cycle50%. 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS(Ta=25C, unless otherwise specified) PARAMETER Collector Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage Transition Frequency Collector Output Capacitance SYMBOL BVCEO ICBO IEBO hFE(1) hFE(2) VCE(SAT) VBE(SAT) fT Cob TEST CONDITIONS IC= 10mA, IB= 0 VCB=50V, IE= 0 VEB= 5V, IC=0 VCE=2V, Ic=0.5A VCE=2V, Ic=1.5A IC=1A, IB=0.05A IC=1A, IB=0.05A VCE=2V, IC=0.5A VCB= 10V, IE= 0, f=1MHz IB1 20s Switching Time(Turn-on Time) MAX 1.0 1.0 240 70 40 0.5 1.2 UNIT V A A 100 30 V V MHz pF 0.1 S 10 IB2 IB2 tON TYP OUTPUT INPUT IB1 MIN 50 Vcc=30 V IB1= -IB2=0.05A DUTY CYCLE1% CLASSIFICATION OF hFE(1) RANK RANGE O 70-140 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Y 120-240 2 of 4 QW-R211-013,C 2SC2655 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS VCE -Ic Ic-VCE 25 20 2.0 18 15 Common Emitter Ta=25C 12 1.6 10 1.2 8 6 0.8 4 IB=2mA 0.4 0 0 1 Collector -Emitter Voltage, Vc E(V) Collector Current, Ic (A) 2.4 0.8 0.6 IB=5mA 0.4 30 40 0.2 0 0 2 4 6 8 10 12 14 Collector -Emitter Voltage, VcE (V) 0.4 VCE -Ic 20 10 0.4 30 40 0.2 0 0 Common Emitter Ta=100C 0.4 0.8 1.2 1.6 1 Collector -Emitter Voltage, Vc E(V) Collector -E mitter Voltage, Vc E (V) 0.8 IB =5mA 0.6 10 20 30 40 50 0.2 0 0 0.4 0.8 1.2 1.6 2.4 2.0 Collector Current, Ic (A) hFE -Ic VCE(SAT) -Ic 1 Common Emitter VCE=2V 500 Ta=25C Ta=100C 100 Ta=-55C 50 Collector Emitter Saturation Voltage, VCE(SAT) (V) 1000 DC Current Gain, hFE Common EmitterTa= -55C 0.4 2.4 2.0 I B=5mA 0.8 Collector Current, Ic (A) 300 2.4 1.6 0.8 1.2 2.0 Collector Current, Ic (A) VCE -Ic 1 0.6 Common Emitter Ta=25C 20 10 Common Emitter Ic/IB=20 0.5 0.3 0.1 Ta=100C 0.05 30 Ta=25C Ta=-55C 10 0.01 0.03 0.1 0.3 1 Collector Current, Ic (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.02 0.01 0.03 0.05 0.1 0.3 0.5 1 Collector Current, Ic (A) 3 of 4 QW-R211-013,C 2SC2655 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) VBE(SAT ) -Ic Ic-VBE 2.0 Common Emitter Ic/IB=20 3 Ta=-55C 1 0.5 Ta=100C Ta=25C 0.3 0.1 0.01 0.03 0.05 0.1 0.3 Collector Current, Ic (A) Base Emitter Saturation Voltage, V BE(SAT) 5 Common Emitter VCE=2 V 1.5 Ta=100C Ta=25C 0.5 0 0 1 Ta=-55C 1.0 Collector Current, Ic (A) 0.4 0.8 1ms* AX .( S) U O I c I NU N CO 0.5 PT=1s 0.3 DC Operation Ta=25C 0.1 Single Nonrepetitive Pulse Ta=25C Collector Current-Ic(mA) M Collector Current, Ic(A) 10ms* 1 2.0 Pc-Ta 100ms* 1s* 0.05 0.0 Curves Must Be Derated Linearly With Increase In Temperature 3 0.0 VCEO MAX. 10.2 0.5 1 3 10 30 100 Collector-Emitter Voltage, VCE(V) Collector Power Dissipation, Pc (mW) Ic MAX.(PULSED )* 1.6 Base -Emitter Voltage, VBE (V) Safe Operating Area 5 3 1.2 1000 800 600 400 200 0 0 40 80 120 160 200 240 Ambient Temperature,Ta (C) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R211-013,C