2SC2655-X-T9N-K - Unisonic Technologies Co., Ltd.

UNISONIC TECHNOLOGIES CO., LTD

2SC2655

NPN SILICON TRANSISTOR

www.unisonic.com.tw

1 of 4

QW-R211-013,C

POWER AMPLIFIER APPLICATIONS

POWER SWITCHING APPLICATIONS

 FEATURES

*Low saturation voltage

V

CE(SAT)

= 0.5V (Max.)

*High speed switching time

tstg=1.0µs (Typ.)

TO-92NL

1

*Pb-free plating product number: 2SC2655L

 ORDERING INFORMATION

Order Number Pin Assignment

Normal Lead Free Plating Package 1 2 3 Packing

2SC2655-x-T9N-B 2SC2655L-x-T9N-B TO-92NL E C B Tape Box

2SC2655-x-T9N-K 2SC2655L-x-T9N-K TO-92NL E C B Bulk

2SC2655-x-T9N-R 2SC2655L-x-T9N-R TO-92NL E C B Tape Reel

2C2655L-x-T9N-K ( 1) P ac k i ng Type

( 2)Pac k a ge Type

(4)Lead Plating

(1 ) B: Tap e Bo x, K: Bu lk, R : Ta pe Re el

(2) T9N: TO-92 NL

(4) L: Lead F r ee P lat ing, Blank: Pb/Sn

(3) ref er to Classification of h

FE(1)

(3)Rank

2SC2655

NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

2 of 4

www.unisonic.com.tw

QW-R211-013,C

 ABSOLUTE MAXIMUM RATINGS

( Ta=25

°

C ,unless otherwise specified )

PARAMETER SYMBOL RATING UNIT

Collector-Base Voltage V

CBO

50 V

Collector-Emitter Voltage V

CEO

50 V

Emitter-Base Voltage V

EBO

5 V

Collector Current Ic 2 A

Collector Current(Pulse) Icp* 3 A

Base Current I

B

0.5 A

Collector Power Dissipation Pc 900 mW

Junction Temperature T

J

150

°

C

Storage Temperature T

STG

-55 ~ +150

°

C

Note: * PW 16ms,

≦

Duty Cycle 50%.

≦

1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS

(Ta=25

°

C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

Collector Emitter Breakdown Voltage BV

CEO

I

C

= 10mA, I

B

= 0 50 V

Collector Cut-off Current I

CBO

V

CB

=50V, I

E

= 0 1.0 µA

Emitter Cut-off Current I

EBO

V

EB

= 5V, I

C

=0 1.0 µA

h

FE(1)

V

CE

=2V, Ic=0.5A 70 240

DC Current Gain h

FE(2)

V

CE

=2V, Ic=1.5A 40

Collector-Emitter Saturation Voltage V

CE(SAT)

I

C

=1A, I

B

=0.05A 0.5 V

Base- Emitter Saturation Voltage V

BE(SAT)

I

C

=1A, I

B

=0.05A 1.2 V

Transition Frequency f

T

V

CE

=2V, I

C

=0.5A 100 MHz

Collector Output Capacitance Cob V

CB

= 10V, I

E

= 0, f=1MHz 30 pF

Switching Time(Turn-on Time) t

ON

IB1

IB2

20μsINPUT OUTPUTIB1

IB2

Vcc=30 V

10Ω

I

B1

= -I

B2

=0.05A

DUTY CYCLE

≦

1%

0.1 µS

 CLASSIFICATION OF h

FE(1)

RANK O Y

RANGE 70-140 120-240

2SC2655

NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

3 of 4

www.unisonic.com.tw

QW-R211-013,C

 TYPICAL CHARACTERISTICS

Ic-V

CE

Collec tor -Emitter Voltage, V c

E

(V)

Collector Current, Ic (A)

02 46 10

0

0.4

0.8

1.2

1.6

12

2.0

8

Common Emitter

Ta=25°C

h

FE

-Ic

Collector Current, Ic (A)

0.01 0.03 0.1

10

30

50

0.3

100

300

1

500

I

B

=2mA

10

12

15

4

V

CE

-Ic

Collector -Emitter Voltage, Vc

E

(V)

Collector Current, Ic (A)

0 0.4 0.8 1.2 2.0

0

0.2

0.4

0.6

0.8

1

1.6

Common

Emitter

Ta=25°C

I

B

=5mA 10 20

30

40

2.4

Collector -Emitter Voltage, Vc

E

(V)

Collector Current, Ic (A)

V

CE

-Ic

Collector -Emitter Voltage, Vc

E

(V)

Collector Current, Ic (A)

DC Current Gain, h

FE

Ta=-55°C

V

CE(SAT)

-Ic

Collector Current, Ic (A)

0.01 0.03 0.1

0.02

0.05

0.3

0.1

0.3

1

0.5

Collect o r Emitter Satu ration

Voltage, V

CE

(SAT)

(V)

Ta=100°C

Ta=25°C

Ta=-55°C

0.05 0.5

14

2.4

8

6

18

20

25

0 0.4 0.8 1.2 2.0

0

0.2

0.4

0.6

0.8

1

1.6

I

B

=5mA 10 20

30

40

2.4

V

CE

-Ic

Common Emitter

Ta=100°C0 0.4 0.8 1.2 2.0

0

0.2

0.4

0.6

0.8

1

1.6

IB=5mA

10 20 30

40

2.4

Common EmitterTa= -5 5°C

50

1000 Common Emitter

V

CE

=2V

Ta=100°CTa=25°C

1Common Emitter

Ic/I

B

=20

2SC2655

NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

4 of 4

www.unisonic.com.tw

QW-R211-013,C

 TYPICAL CHARACTERISTICS(Cont.)

Ic-V

BE

Base -Emitter Voltage, V

BE

(V)

Collector Current, Ic (A)

0 0.4 0.8 1.2

0

0.5

1.0

1.5

1.6

2.0 Common Emitter

V

CE

=2 V

V

BE(SAT)

-Ic

Collector Current, Ic (A)

0.01 0.03 0.1

0.1

0.3

0.5

0.3

1

3

Base Emitt er Satur ation

Voltage, V

BE(SAT)

Ta=100°CTa=25°C

Ta=-55°C

0.05 2.0

Ta=-55°C

Ta=100°C

Ta=25°C

5Common Emitter

Ic/I

B

=20

Pc-Ta

Ambient Temperature,

Collector Power Dissipation, Pc (mW)

0 40 80 120

0

200

400

600

160

800

200

Collector-Emitter Vol tage, V

CE

(V)

Safe Operating Area

Collector Current-Ic(mA)

PT=1s

30.2 1 10

0.0

1

0.1

0.0

3

0.05

Collector Current, Ic(A)

0.3

Single Nonrepetitive Pulse

0.5 30 100

0.5

1

3

51ms*

10ms*

100ms*

1s*

I c MA X.(PULSE D)*

Ic

MAX.(CONINUOUS)

Ta=25°C

Curves Must Be Derated Linearly With

Increase In Temperature

DC Operation

240

1000

Ta (°C)

V

CEO

MAX.

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believ ed to be accurate

and reliable and m ay be changed without notice.