DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky gate , is designed for use S-X band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses , and has a configuration suitable for microstrip circuits. The MGF1801BT is mounted in the super 24 tape . FEATURES * High output power at 1dB gain compression Pigp = 23dBm (TYP.) @ f=8GHz * High linear gain G_p = 9dB (TYP.) @ f=8GHz * High reliability and stability APPLICATION S to X band medium-power amplifiers and oscillators . QUALITY GRADE iG RECOMMENDED BIAS CONDITIONS Vps=6V , Ilp=100mA MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET OUTLINE DRAWING Unit: millimeters 4 Ty 540.2 4 @ Gate Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maxdmum effort into making @ Source 3 Drain semiconductor products better and more reliable , but there is always the GD-24 possibility that trouble may occur with them . Trouble with semiconductors may lead to personal injury , fire or property damage . Remember to give due consideration to safety when making your circuit designs , with appropriate measures such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. ABSOLUTE MAXIMUM RATINGS (Ta=25C) Symbol Parameter Ratings Unit Vapo Gate to drain voltage -8 V Vaso Gate to source voltage -8 Vv Ip Drain current 250 mA IGR Reverse gate current -0.6 mA IGF Forward gate current 1.5 mA PT Total power dissipation 1.2 mw Teh Channel temperature 175 C Tstg Storage temperature -65~4175 C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol Parameter Test conditions Limits Unit MIN TYP. MAX V(BR)GDO | Gate to drain breakdown voltage Ig=-200 WA -8 -- -- Vv VBR)GSo | Gate to source breakdown voltage Iqg=-200 UA -8 -- -- Vv lass __|Gate to source leakage current Vas=-3V,Vps=0V -- -- 20 LLA Ipss__|Saturated drain current Vas=0V, Vps=3V 150 200 250 mA Vas(otf |Gate to source cut-off voltage Vps=8V,Ip=100 ZA -1.5 -- -4.5 Vv gm Transconductance Vps=6V,Ilp=100mA 70 90 7 mS Gp __|Linear power gain Vps=6V, Ip=100MA 7.0 9.0 - dB P1dB _|Output power at 1dB gain compression f=12GHz 21.8 23.0 -- dBm MITSUBISHI ELECTRIC (173).MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET TYPICAL CHARACTERISTICS (ta=25t) Ip vs. Vps 200 Ves=0V +Vgs= 0.5V/step < E 2 t & 100 ao c a) Oo Zz < ao a 0 0 2 4 6 8 10 DRAIN TO SOURCE VOLTAGE Vps (Vv) Py vs. Pin Py vs. Pin (f = 8 GHz) : ( f = 12 GHz) 30 t - 30 _ ip=100ma Gain : 10dB Ip=100mA Gain : 10dB E25 le, Ee 2 La E 2 Oo if & 7 2 ~ LE: 0. < Z : 70 Wy o 20 SY tO Ya . Y Gy wi 15 iY) LZ c 45 Y} Z| = YY, CS = by? 7 7 fi) Jz L k LY) ZL bE UHL L > 10 R/ 7 D> 10 5 7 a a. 2 BIL Y/Y 2 Gh 3 LLLL o L o tf __ 5 7 Vos=6V7 5 ALS + Vos=6V -"-4- Vos=4V : o~--b Vps=4V ol 41 I oL_Z a 5 0 5 10 15 20 25 5 0 5 10 15 20 25 INPUT POWER Pin (dBm) INPUT POWER Pin (dBm) MITSUBISHI ELECTRIC (2/73)MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET Si, . $2. vs. f Ta=2se Vos=6V Ip = 100mA S PARAMETERS (Ta=25'c, Vos=6V, !p=100mA) Freq. Sit Sat Si2 S22 MSG/MAG (GHz) Mag. Ang. Mag. Ang. Mag, Ang. Mag. Ang. . (dB) 0.5 0.899 56.8 6.115 140.3 0.047 $2.1 0.471 25.2 0.371 21.2 1.0 0.874 69.4 5.682 130.4 0.049 49.3 0.462 32.7 0.394 20.7 1.5 0.848 ~- 82.1 5.248 120.5 0.050 46.4 0.452 40.1 0.431 20.2 2.0 0.822 ~ 94.7 4.815 110.6 0.052 43.6 0.442 - 47.5 0.485 19.7 2.5 0.796 107.4 4.382 100.6 0.054 40.8 0.432 54.9 0.558 19.1 3.0 0.771 120.0 3.949 90.8 0.056 38.0 0.422 62.4 0.657 18.5 3.5 0.745 132.7 3.515 80.9 0.057 35.1 0.413 69.8 0.789 17.9 4.0 0.719 145.3 3.082 71.0 - 0.059 32.3 0.403 77.2 0.964 17.2 4.5 0.713 153.3 2.863 63.3 0.060 33.3 0.412 84.2 1.006 16.3 5.0 0.706 161.3 2.645 55.6 0.062 * 34.3 0.421 91.1 1.064 14.8 5.5 0.700 ~ 169.3 2.426 47.9 0.063 35.2 0.431 98.1 1.142 13.6 6.0 0.694 177.3 2.207 40.2 0.064 36.2 0.440 105.0 1.245 12.4 6.5 0.691 176.9 2.090 33.9 0.068 37.6 0.458 110.3 1.202 12.1 7.0 0.689 171.1 1.973 27.5 0.073 39.0 0.476 115.5 1.172 11.8 7.5 0.686 165.2 1.856 21.2 0.077 40.4 0.494 ~ 120.8 1.153 11.5 8.0 0.683 159.4 1.739 14.8 0.081 41.8 0.512 126.0 1.146 112.0 8.5 0.677 153.1 1.671 8.5 0.089 40.5 0.530 130.8 1.072 11.1 9.0 0.670 146.9 1.602 2.1 0.096 39.3 0.549 - 135.5 1.011 11.6 9.5 0.664 140.6 1.534 - 4,3 0.104 38.0 0.567 140.3 0.962 11.7 10.0 0.657 134.3 1.466 10.6 0.111 36.7 0.585 145.0 0.922 41.2 10.5 0.645 127.8 1.413 17.0 0.118 33.2 0.601 149.4 0.893 10.8 11.0 0.632 121.3 1,360 23.4 0.126 29.8 0.618 153.9 0.867 10.4 41.5 0.620 114.8 1.308 29.7 0.133 26.3 0.635 158.3 0.844 9.9 12.0 0.608 108.3 1.255 36.1 0.140 22.8 0.651 162.7 0.823 9.5 MITSUBISHI ELECTRIC (3/73)