© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/18/17
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Rating Part Number Symbol Value Unit
Peak Repetitive Off-State Voltage (Note 1)
(TJ = -40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)
BTA08–600BW3G VDRM,
VRRM
600
V
BTA08–800BW3G 800
On-State RMS Current
(180° Conduction Angles; TC = 80°C) IT (RMS) 8.0 A
Peak Non−Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, TC = 80°C) ITSM 90 A
Circuit Fusing Considerations (t = 8.3 ms) I2t 36 A2sec
Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 10ms) VDSM,
VRSM
VDRM/VRRM
+100 V
Peak Gate Current (TJ = 125ºC, t = 20ms) IGM 4.0 A
Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80ºC) PGM 20 W
Average Gate Power (TJ = 125ºC) PG(AV) 1. 0 W
Operating Junction Temperature Range TJ−40 to +125 ºC
Storage Temperature Range Tstg −40 to +150 ºC
RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25ºC) Viso 2500 V
Maximum Ratings † (TJ = 25°C unless otherwise noted)
† Indicates JEDEC Registered Data
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. V DRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Maximum Ratings † (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Thermal Resistance, Junction-to-Case (AC) RΘJC 2.5 °C/W
Thermal Resistance, Junction-to-Ambient RΘJA 63 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from
case for 10 seconds TL260 °C
† Indicates JEDEC Registered Data