Thyristors Surface Mount - 600 - 800V > BTA08-600BW3G, BTA08-800BW3G BTA08-600BW3G, BTA08-800BW3G RoHS Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features * Blocking Voltage to 800 V * On-State Current Rating of 8 A RMS at 80C * Uniform Gate Trigger Currents in Three Quadrants * High Immunity to dV/dt - 2000 V/s minimum at 125C * Minimizes Snubber Networks for Protection * Industry Standard TO-220AB Package * High Commutating dI/dt - 1.5 A/ms minimum at 125C Pin Out * Internally Isolated (2500 VRMS) * These Devices are Pb-Free and are RoHS Compliant Functional Diagram 1 2 TO 220AB CASE 221A STYLE 12 MT2 MT1 G Additional Information Datasheet Resources Samples (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/18/17 Thyristors Surface Mount - 600 - 800V > BTA08-600BW3G, BTA08-800BW3G Maximum Ratings (TJ = 25C unless otherwise noted) Rating Part Number Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) Symbol BTA08-600BW3G BTA08-800BW3G On-State RMS Current Value 600 VDRM, V VRRM IT Unit 800 8.0 A ITSM 90 A I2t 36 A2sec VDSM, VDRM/VRRM VRSM +100 Peak Gate Current (TJ = 125C, t = 20ms) IGM 4.0 A Peak Gate Power (Pulse Width 1.0 s, TC = 80C) PGM 20 W Average Gate Power (TJ = 125C) PG(AV) 1.0 W Operating Junction Temperature Range TJ -40 to +125 C Storage Temperature Range Tstg -40 to +150 C RMS Isolation Voltage Viso 2500 V (180 Conduction Angles; TC = 80C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TC = 80C) Circuit Fusing Considerations (t = 8.3 ms) Non-Repetitive Surge Peak Off-State Voltage (TJ = 25C, t = 10ms) (t = 300 ms, R.H. 30%, TA = 25C) (RMS) V Indicates JEDEC Registered Data Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1.VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Maximum Ratings (TJ = 25C unless otherwise noted) Rating Symbol Value Unit Thermal Resistance, Junction-to-Case (AC) RJC 2.5 C/W Thermal Resistance, Junction-to-Ambient RJA 63 C/W TL 260 C Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds Indicates JEDEC Registered Data (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/18/17 Thyristors Surface Mount - 600 - 800V > BTA08-600BW3G, BTA08-800BW3G Electrical Characteristics - OFF (TC = 25C unless otherwise noted) Characteristic Peak Repetitive Blocking Current (VAK = VDRM = VRRM; Gate Open) TJ = 25C TJ = 125C Symbol Min Typ Max Unit IDRM, - - 0.005 mA IRRM - - 2.0 Electrical Characteristics - ON Characteristic Symbol Min Typ Max Unit VTM - - 1.55 V 2.5 - 50 2.5 - 50 2.5 - 50 - - 60 - - 70 - - 90 MT2(-), G(-) - - 70 MT2(+), G(+) 0.5 - 1.7 0.5 - 1.1 MT2(-), G(-) 0.5 - 1.1 MT2(+), G(+) 0.2 - - 0.2 - - 0.2 - - Peak On-State Voltage (Note 2) (ITM = 11 A Peak) MT2(+), G(+) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 ) MT2(+), G(-) IGT MT2(-), G(-) Holding Current (VD = 12 V, Gate Open, Initiating Current = 100 mA) IH MT2(+), G(+) Latching Current (VD = 24 V, IG = 42 mA) Gate Trigger Voltage (VD = 12 V, RL = 30 ) Gate Non-Trigger Voltage (TJ = 125C) MT2(+), G(-) MT2(+), G(-) MT2(+), G(-) MT2(-), G(-) IL VGT tgt (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/18/17 mA mA mA V V Thyristors Surface Mount - 600 - 800V > BTA08-600BW3G, BTA08-800BW3G Dynamic Characteristics Characteristic Rate of Change of Commutating Current, See Figure 10. (Gate Open, TJ = 125C, No Snubber) Critical Rate of Rise of On-State Current (TJ = 125C, f = 120 Hz, IG = 2 x IGT, tr 100 ns) Critical Rate-of-Rise of Off-State Voltage (VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125C) Symbol Min Typ Max Unit (dl/dt)C 3.0 - - A/ms dl/dt - - 50 A/s dv/dt(c) 1500 - - V/s Voltage Current Characteristic of SCR Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH I I I Holding Current (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/18/17 Thyristors Surface Mount - 600 - 800V > BTA08-600BW3G, BTA08-800BW3G Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation 12 DC P AV , AVERAGE POWER (W) 10 180 8 120 6 60 4 90 = 30 2 0 I T(RMS) , ON-STATE CURRENT (A) Figure 4. Thermal Response 100 Typical @ T J = 40 C Typical @ T I T, INSTANTANEOUS ON STATE CURRENT (A) Typical @ T J J = 25 C = 125 C 10 r (t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 3. On-State Characteristics 1 0.1 0.01 0.1 1 10 100 t, TIME (ms) 1000 Figure 5. Holding Current Variation 1 Typical @ T J = 125 C Typical @ T Typical @ T 0.1 00 .5 11 .5 22 .5 J = 25 C J = 33 40 C .5 44 .5 5 V T, INSTANTANEOUS ON-STATE VOLTAGE (V) (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/18/17 1* 10 4 Thyristors Surface Mount - 600 - 800V > BTA08-600BW3G, BTA08-800BW3G Typical Characteristics Figure 6. Typical Gate Trigger Current vs. Pulse Width Figure 7. Typical Gate Trigger Current vs. Junction Temperature Figure 8. Typical Gate Trigger Voltage vs. Junction Temperature Figure 9. Typical Holding Current vs. Junction Temperature Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC 1N4007 CHARGE TRIGGER CHARGE CONTROL CL TRIGGER CONTROL MEASURE I + 200 V MT2 1N914 51 G MT1 Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/18/17 Thyristors Surface Mount - 600 - 800V > BTA08-600BW3G, BTA08-800BW3G Dimensions Part Marking System SEATING PLANE B F 4 Q 12 C T S A 1 U 3 TO 220AB CASE 221A STYLE 12 2 H K Z R L V J G D N Dim Inches Millimeters Pin Assignment Min Max Min Max 1 Main Terminal 1 A 0.570 0.620 14.48 15.75 2 Main Terminal 2 B 0.380 0.405 9.66 10.28 3 Gate C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 4 Main Terminal 2 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.014 0.022 0.36 0.55 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 Ordering Information Device Package BTA08-600BW3G TO-220AB BTA08-800BW3G (Pb-Free) Shipping 50 Units / Retail 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: INCH. 3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics. (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/18/17