© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/18/17
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
• Blocking Voltage to 800 V
• On-State Current Rating of 8 A RMS at 80°C
• Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dV/dt − 2000 V/s minimum at 125°C
• Minimizes Snubber Networks for Protection
• Industry Standard TO-220AB Package
• High Commutating dI/dt − 1.5 A/ms minimum at 125°C
• Internally Isolated (2500 VRMS)
• These Devices are Pb−Free and are RoHS Compliant
Features
Designed for high performance full-wave ac control
applications where high noise immunity and high
commutating di/dt are required.
Description
BTA08-600BW3G, BTA08-800BW3G
Functional Diagram
RoHS
Pb
Additional Information
Samples
Resources
Datasheet
Pin Out
MT1
G
MT2
TO 220AB
CASE 221A
STYLE 12
12
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/18/17
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Rating Part Number Symbol Value Unit
Peak Repetitive Off-State Voltage (Note 1)
(TJ = -40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)
BTA08–600BW3G VDRM,
VRRM
600
V
BTA08–800BW3G 800
On-State RMS Current
(180° Conduction Angles; TC = 80°C) IT (RMS) 8.0 A
Peak Non−Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, TC = 80°C) ITSM 90 A
Circuit Fusing Considerations (t = 8.3 ms) I2t 36 A2sec
Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 10ms) VDSM,
VRSM
VDRM/VRRM
+100 V
Peak Gate Current (TJ = 125ºC, t = 20ms) IGM 4.0 A
Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80ºC) PGM 20 W
Average Gate Power (TJ = 125ºC) PG(AV) 1. 0 W
Operating Junction Temperature Range TJ−40 to +125 ºC
Storage Temperature Range Tstg −40 to +150 ºC
RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25ºC) Viso 2500 V
Maximum Ratings † (TJ = 25°C unless otherwise noted)
† Indicates JEDEC Registered Data
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. V DRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Maximum Ratings † (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Thermal Resistance, Junction-to-Case (AC) RΘJC 2.5 °C/W
Thermal Resistance, Junction-to-Ambient RΘJA 63 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from
case for 10 seconds TL260 °C
† Indicates JEDEC Registered Data
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/18/17
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Characteristic Symbol Min Typ Max Unit
Peak On-State Voltage (Note 2) (ITM = ±11 A Peak) VTM − − 1.55 V
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 Ω)
MT2(+), G(+)
IGT
2.5 − 50
mA
MT2(+), G(−) 2.5 − 50
MT2(−), G(−) 2.5 − 50
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±100 mA) IH − − 60 mA
Latching Current (VD = 24 V, IG = 42 mA)
MT2(+), G(+)
IL
− − 70
mA
MT2(+), G(−) − − 90
MT2(−), G(−) − − 70
Gate Trigger Voltage (VD = 12 V, RL = 30 Ω)
MT2(+), G(+)
VGT
0.5 − 1. 7
VMT2(+), G(−) 0.5 − 1. 1
MT2(−), G(−) 0.5 − 1. 1
Gate Non−Trigger Voltage (TJ = 125°C)
MT2(+), G(+)
tgt
0.2 − −
VMT2(+), G(−) 0.2 − −
MT2(−), G(−) 0.2 − −
Electrical Characteristics - OFF (TC = 25°C unless otherwise noted)
Electrical Characteristics - ON
Characteristic Symbol Min Ty p Max Unit
Peak Repetitive Blocking Current
(VAK = VDRM = VRRM; Gate Open)
TJ = 25°C IDRM,
IRRM
- - 0.005
mA
TJ = 125°C - - 2.0
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/18/17
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Voltage Current Characteristic of SCR
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage
IHHolding Current
I
I
I
Dynamic Characteristics
Characteristic Symbol Min Typ Max Unit
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 125°C, No Snubber) (dl/dt)C3.0 – − A/ms
Critical Rate of Rise of On-State Current
(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns) dl/dt − − 50 A/µs
Critical Rate−of−Rise of Off-State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dv/dt(c) 1500 – − V/µs
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/18/17
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Figure 4. Thermal Response
Figure 5. Holding Current Variation
Figure 3. On−State Characteristics
t, TIME (ms)
1
0.1
0.01 1· 10 4
10001001010.1
r(t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
VT, INSTANTANEOUS ON-STATE VOLTAGE (V)
0.1
1
10
100
00 .5 11 .5 22 .5 33 .5 44 .5 5
IT, INSTANTANEOUS ON STATE CURRENT (A)
Typical @ T J = 25 ϒC
Typical @ T J = 125 ϒC
Typical @
TJ = 40 ϒC
Typical @ T J = 125 ϒC
Typical @ T J = 25 ϒC
Typical @ T J = 40 ϒC
Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation
IT(RMS) , ON-STATE CURRENT (A)
PAV, AVERAGE POWER (W)
12
10
8
6
4
2
0
α = 30°
DC
180°
120°
90°
60°
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/18/17
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Figure 6. Typical Gate Trigger Current vs. Pulse Width
Typical Characteristics
Figure 7. Typical Gate Trigger Current vs. Junction Temperature
Figure 8. Typical Gate Trigger Voltage vs. Junction Temperature Figure 9. Typical Holding Current vs. Junction Temperature
Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
LL1N4007
200 V
+
MEASURE
I
-
CHARGE
CONTROL
CHARGE TRIGGER
CL
51
MT2
MT1
1N914
G
TRIGGER CONTROL
200 VRMS
ADJUST FOR
ITM
, 60 Hz VAC
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/18/17
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Dimensions Part Marking System
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND
LEAD IRREGULARITIES ARE ALLOWED.
Dim
Inches Millimeters
Min Max Min Max
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.022 0.36 0.55
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1. 1 5 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1. 15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 −−− 1. 1 5 −−−
Z −−− 0.080 −−− 2.04
A
K
L
V
G
D
N
Z
H
Q
FB
12 3
4
SEATING
PLANE
S
R
J
U
TC
Pin Assignment
1Main Terminal 1
2Main Terminal 2
3 Gate
4Main Terminal 2
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete
Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics.
Ordering Information
Device Package Shipping
BTA08-600BW3G TO-220AB
(Pb-Free) 50 Units / Retail
BTA08-800BW3G
TO 220AB
CASE 221A
STYLE 12
12
