http://www.fujielectric.com/products/semiconductor/ 7MBR15VKC120-50 IGBT Modules IGBT MODULE (V series) 1200V / 15A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless otherwise specified) Junction temperature Tj Inverter, Brake Converter Maximum ratings 1200 20 15 30 15 30 135 1200 20 15 30 135 1200 1600 15 245 300 175 150 Operating junciton temperature (under switching conditions) Tjop Inverter, Brake 150 Case temperature Storage temperature TC Tstg Items Symbols Inverter Collector-Emitter voltage Gate-Emitter voltage Collector current Converter Brake Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Repetitive peak reverse voltage (Diode) Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Conditions VCES VGES Ic Icp -Ic -Ic pulse PC VCES VGES IC ICP PC VRRM VRRM IO IFSM I2 t Continuous 1ms TC =100C TC =80C 1ms 1 device Continuous 1ms 1 device TC =80C TC =80C 50Hz/60Hz, sine wave 10ms, Tj =150C half sine wave Units V V A W V V A W V V A A A2 s C 125 -40 to +125 Isolation voltage between terminal and copper base (*1) Viso between thermistor and others (*2) AC : 1min. Screw torque Mounting (*3) M4 - 2500 VAC 1.7 Nm Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 1.3-1.7 Nm (M4) 1 1493 FEBRUARY 2013 7MBR15VKC120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical characteristics (at Tj= 25C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols Conditions ICES IGES VGE (th) VGE = 0V, VCE = 1200V VGE = 0V, VGE = 20V VCE = 20V, IC = 15mA VCE (sat) (terminal) VGE = 15V IC = 15A VCE (sat) (chip) VGE = 15V IC = 15A Rg(int) Cies ton tr tr (i) toff tf - Inverter Collector-Emitter saturation voltage Internal gate resistance Input capacitance Turn-on time Turn-off time VF (terminal) VCE = 10V, VGE = 0V, f = 1MHz VCC = 600V IC = 15A VGE = +15 / -15V RG = 39 Tj=25C Tj=125C Tj=150C Tj=25C Tj=125C Tj=150C IF = 15A Forward on voltage Brake Units mA nA V V nF s V VF (chip) IF = 15A trr IF = 15A Zero gate voltage collector current ICES VGE = 0V VCE = 1200V - - 1.0 mA Gate-Emitter leakage current IGES VCE = 0V VGE = +20 / -20V - - 200 nA VCE (sat) (terminal) VGE = 15V IC = 15A 465 3305 2.10 2.50 2.55 1.90 2.30 2.35 0 0.18 0.14 0.29 0.06 1.20 1.00 5000 495 3375 2.55 2.30 1.20 0.60 1.00 0.30 1.0 1.65 1.0 520 3450 Reverse recovery time Collector-Emitter saturation voltage Internal gate resistance Turn-on time Turn-off time Reverse current Thermistor Converter Tj=25C Tj=125C Tj=150C Tj=25C Tj=125C Tj=150C Characteristics min. typ. max. 1.0 200 6.0 6.5 7.0 2.10 2.55 2.50 2.55 1.90 2.30 2.30 2.35 0 1.2 0.18 1.20 0.14 0.60 0.02 0.29 1.00 0.06 0.30 2.05 2.65 2.30 2.30 1.85 2.45 2.10 2.10 0.35 VCE (sat) (chip) VGE = 15V IC = 15A Rg(int) ton tr toff tf IRRM - Tj=25C Tj=125C Tj=150C Tj=25C Tj=125C Tj=150C VCE = 600V IC = 15A VGE = +15 / -15V RG = 39 VR = 1200V terminal chip Forward on voltage VFM IF = 15A Reverse current IRRM Resistance R B value B VR = 1600V T = 25C T = 100C T = 25 / 50C Symbols Conditions s V s mA V mA K Thermal resistance characteristics Items Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*4) Rth(c-f) Inverter IGBT Inverter FWD Brake IGBT Converter Diode with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 2 Characteristics min. typ. max. 1.15 2.16 1.15 1.35 0.05 - Units C/W 7MBR15VKC120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip Tj= 150oC / chip 30 30 15V 25 VGE=20V 12V Collector current: IC [A] Collector current: IC [A] VGE=20V 20 15 10V 10 15V 25 12V 20 15 10V 10 5 5 8V 8V 0 0 1 2 3 4 0 5 0 1 Collector-Emitter voltage: VCE[V] 5 Tj= 25oC / chip Collector - Emitter voltage: VCE [V] 8 Tj=25oC Collector current: IC [A] 4 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) 30 Tj=150oC 25 20 Tj=125oC 15 10 5 0 1 2 3 4 6 4 0 5 Ic=30A Ic=15A Ic=7.5A 2 5 10 Collector-Emitter voltage: VCE[V] Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 10.00 Cies 1.00 Cres Coes 0.00 0 10 20 20 25 [ Inverter ] Dynamic gate charge (typ.) Vcc=600V Ic=15ATj= 25C VGE=0V, f= 1MHz, Tj= 25oC 0.10 15 Gate - Emitter voltage: VGE [V] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) Capacitance: Cies, Coes, Cres [nF] 3 Collector-Emitter voltage: VCE[V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 0 2 VCE VGE 0 -150 30 Collector - Emitter voltage: VCE [V] 0 Gate charge: Qg [nC] 3 150 7MBR15VKC120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ 1000 1000 toff ton tr 100 tf 10 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600VVGE=15VRg=39Tj= 150C Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600VVGE=15VRg=39Tj= 125C 0 10 20 30 toff ton tr 100 tf 10 40 0 Collector current: IC [A] toff ton tr 100 tf 10 10 100 1000 Switching loss : Eon, Eoff, Err [mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 1000 40 Eon(150oC) Eon(125oC) 4 3 Eoff(150oC) Eoff(125oC) 2 Err(150oC) Err(125oC) 1 0 0 10 20 30 Collector current: IC [A] [ Inverter ] Switching loss vs. gate resistance (typ.) Vcc=600VIc=15AVGE=15V [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, Rg >= 39 ,Tj = 150C 5 40 4 Eon(150oC) Eon(125oC) 3 2 Eoff(150oC) Eoff(125oC) 1 Err(150oC) Err(125oC) Collector current: IC [A] Switching loss : Eon, Eoff, Err [mJ/pulse ] 30 5 Gate resistance : Rg [] 0 20 Collector current: IC [A] [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600VVGE=15VRg=39 [ Inverter ] Switching time vs. gate resistance (typ.) Vcc=600VIc=15AVGE=15VTj= 125C 10000 10 30 20 10 0 10 100 1000 RBSOA (Repetitive pulse) 0 400 800 1200 Collector-Emitter voltage : VCE [V] Gate resistance : Rg [] (Main terminals) 4 40 7MBR15VKC120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [ Inverter ] Forward current vs. forward on voltage (typ.) chip [ Inverter ] Reverse recovery characteristics (typ.) Vcc=600VVGE=15VRg=39 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 30 Forward current : IF [A] 25 20 Tj=150oC Tj=125oC Tj=25oC 15 10 5 0 0 1 2 3 1000 trr(125oC) 100 trr(150oC) Irr(150oC) 10 1 4 Irr(125oC) 0 5 Forward on voltage : VF [V] 10 15 20 25 30 35 40 Forward current : IF [A] [ Converter ] Forward current vs. forward on voltage (typ.) chip 30 Forward current : IF [A] 25 Tj=25oC Tj=125oC 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 Forward on voltage : VFM [V] [ Thermistor ] Temperature characteristic (typ.) 100 10.00 4 Zth = rn 1 - e - t n n =1 FWD[Inverter] Resistance : R [k] Thermal resistanse : Rth(j-c) [ C/W ] Transient thermal resistance (max.) Conv. Diode 1.00 0.10 IGBT[Inverter,Brake] n n rn [sec] IGBT [C/W] FWD B-IGBT Conv 0.01 0.001 1 0.0001 0.07408 0.13915 0.07408 0.08697 0.010 2 0.0021 0.11541 0.21678 0.11541 0.13549 3 0.0133 0.83407 1.56660 0.83407 0.97913 0.100 4 0.1247 0.12643 0.23747 0.12643 0.14842 10 1 0.1 1.000 Pulse width : Pw [sec] -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [C ] 5 7MBR15VKC120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [ Brake ] [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip 30 30 15V VGE=20V VGE=20V 12V 25 Collector current: IC [A] Collector current: IC [A] Tj= 150oC / chip 20 15 10V 10 15V 25 12V 20 15 10V 10 5 5 8V 0 0 1 2 3 4 0 5 8V 0 Collector-Emitter voltage: VCE[V] 4 5 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=15V / chip Tj= 25oC / chip Collector - Emitter voltage: VCE [V] 8 Tj=25oC Collector current: IC [A] 3 Collector current vs. Collector-Emitter voltage (typ.) 30 Tj=150oC 25 20 Tj=125oC 15 10 5 0 1 2 3 4 6 4 0 5 Ic=30A Ic=15A Ic=7.5A 2 5 10 Collector-Emitter voltage: VCE[V] Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 10.00 Cies 1.00 Cres Coes 0.00 0 10 20 20 25 [ Brake ] Dynamic gate charge (typ.) Vcc=600V Ic=15ATj= 25C VGE=0V, f= 1MHz, Tj= 25oC 0.10 15 Gate - Emitter voltage: VGE [V] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) Capacitance: Cies, Coes, Cres [nF] 2 Collector-Emitter voltage: VCE[V] [ Brake ] 0 1 VCE 0 -150 30 Collector - Emitter voltage: VCE [V] VGE 0 Gate charge: Qg [nC] 6 150 7MBR15VKC120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Outline Drawings, mm Weight: 25g(typ.) Equivalent Circuit Schematic [Converter] [Brake] [Inverter] 7 [Thermistor] 7MBR15VKC120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of February 2013. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. * Computers * OA equipment * Communications equipment (terminal devices) * Measurement equipment * Machine tools * Audiovisual equipment * Electrical home appliances * Personal equipment * Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. * Transportation equipment (mounted on cars and ships) * Trunk communications equipment * Traffic-signal control equipment * Gas leakage detectors with an auto-shut-off feature * Emergency equipment for responding to disasters and anti-burglary devices * Safety devices * Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). * Space equipment * Aeronautic equipment * Nuclear control equipment * Submarine repeater equipment 7. Copyright (c)1996-2013 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 8