1C3M0075120D Rev. A, 02-2019
C3M0075120D
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology
N-Channel Enhancement Mode
Features
• C3MTM SiC MOSFET technology
• High blocking voltage with low On-resistance
• High speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant
Benets
• Higher system efciency
• Reduced cooling requirements
• Increased power density
• Increased system switching frequency
Applications
• Renewable energy
• EV battery chargers
• High voltage DC/DC converters
• Switch Mode Power Supplies
Package
Part Number Package Marking
C3M0075120D TO-247-3 C3M0075120
V
DS
1200 V
I
D
@
25˚C
30 A
R
DS(on)
75 mΩ
Maximum Ratings (TC = 25 ˚C unless otherwise specied)
Symbol Parameter Value Unit Test Conditions Note
VDSmax Drain - Source Voltage 1200 V VGS = 0 V, ID = 100 μA
VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1
VGSop Gate - Source Voltage (static) -4/+15 V Static Note: 2
ID Continuous Drain Current
30
AVGS = 15 V, TC = 25˚C Fig. 19
19.7 VGS = 15 V, TC = 100˚C
ID(pulse) Pulsed Drain Current 80 A Pulse width tP limited by Tjmax Fig. 22
PDPower Dissipation 113.6 W TC=25˚C, TJ = 150 ˚C Fig. 20
TJ , Tstg Operating Junction and Storage Temperature -55 to
+150 ˚C
TLSolder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s
MdMounting Torque 1
8.8
Nm
lbf-in M3 or 6-32 screw
Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
2C3M0075120D Rev. A, 02-2019
Electrical Characteristics (TC = 25˚C unless otherwise specied)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 100 μA
VGS(th) Gate Threshold Voltage 1.7 2.5 4.0 VVDS = VGS, ID = 5 mA Fig. 11
2.0 VVDS = VGS, ID = 5 mA, TJ = 150ºC
IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1200 V, VGS = 0 V
IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V
RDS(on) Drain-Source On-State Resistance 75 90 mΩVGS = 15 V, ID = 20 A Fig. 4,
5, 6
105 VGS = 15 V, ID = 20A, TJ = 150ºC
gfs Transconductance 9.0 SVDS= 20 V, IDS= 20 A Fig. 7
8.3 VDS= 20 V, IDS= 20 A, TJ = 150ºC
Ciss Input Capacitance 1350
pF VGS = 0 V, VDS = 1000 V
f = 1 MHz
VAC = 25 mV
Fig. 17,
18
Coss Output Capacitance 58
Crss Reverse Transfer Capacitance 3
Eoss Coss Stored Energy 35 μJ Fig. 16
EON Turn-On Switching Energy (SiC Diode FWD) 564
μJ VDS = 800 V, VGS = -4 V/15 V, ID = 20A,
RG(ext) = 0Ω, L= 157 μH, TJ = 150ºC
Fig. 26,
29
EOFF Turn Off Switching Energy (SiC Diode FWD) 186
EON Turn-On Switching Energy (Body Diode FWD) 924
μJ VDS = 800 V, VGS = -4 V/15 V, ID = 20A,
RG(ext) = 0Ω, L= 157 μH, TJ = 150ºC
Fig. 26,
29
EOFF Turn Off Switching Energy (Body Diode FWD) 162
td(on) Turn-On Delay Time 56
ns
VDD = 800 V, VGS = -4 V/15 V
ID = 20 A, RG(ext) = 0 Ω,
Timing relative to VDS
Inductive load
Fig. 27,
28
trRise Time 17
td(off) Turn-Off Delay Time 32
tfFall Time 13
RG(int) Internal Gate Resistance 10.5 Ωf = 1 MHz, VAC = 25 mV
Qgs Gate to Source Charge 17
nC
VDS = 800 V, VGS = -4 V/15 V
ID = 20 A
Per IEC60747-8-4 pg 21
Fig. 12
Qgd Gate to Drain Charge 20
QgTotal Gate Charge 54
Reverse Diode Characteristics (TC = 25˚C unless otherwise specied)
Symbol Parameter Typ. Max. Unit Test Conditions Note
VSD Diode Forward Voltage
4.1 V VGS = -4 V, ISD = 10 A Fig. 8,
9, 10
3.75 V VGS = -4 V, ISD = 10 A, TJ = 150 °C
ISContinuous Diode Forward Current 25.3 A VGS = -4 V, TJ = 25 ˚C Note 1
IS, pulse Diode pulse Current 80 A VGS = -4 V, pulse width tP limited by Tjmax Note 1
trr Reverse Recover time 48 ns
VGS = -4 V, ISD = 20 A, VR = 800 V
dif/dt = 2800 A/µs, TJ = 150 °C Note 1
Qrr Reverse Recovery Charge 279 nC
Irrm Peak Reverse Recovery Current 9 A
Thermal Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
RθJC Thermal Resistance from Junction to Case 0.97 1.1 °C/W Fig. 21
RθJA Thermal Resistance From Junction to Ambient 40
3C3M0075120D Rev. A, 02-2019
0
10
20
30
40
50
60
70
80
90
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Drain-Source Current, IDS (A)
Drain-Source Voltage, VDS (V)
Conditions:
TJ= 150 °C
tp = < 200 µs
V
GS
= 7V
V
GS
= 15V
V
GS
= 13V
V
GS
= 11V
V
GS
= 9V
0
10
20
30
40
50
60
70
80
90
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
Conditions:
T
J
= -55 °C
tp = < 200 µs
V
GS
= 7V
V
GS
= 15V
V
GS
= 13V
V
GS
= 11V
V
GS
= 9V
0
10
20
30
40
50
60
70
80
90
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
V
GS
= 7V
V
GS
= 9V
Figure 2. Output Characteristics TJ = 25 ºC
Typical Performance
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
Figure 1. Output Characteristics TJ = -55 ºC
Figure 3.
Output Characteristics TJ = 150 ºC
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 025 50 75 100 125 150
On Resistance, R
DS On
(P.U.)
Junction Temperature, T
J
(°C)
Conditions:
I
DS
= 20 A
V
GS
= 15 V
t
p
< 200 µs
0
20
40
60
80
100
120
140
010 20 30 40 50 60
On Resistance, RDS On (mOhms)
Drain-Source Current, IDS (A)
Conditions:
V
GS
= 15 V
t
p
< 200 µs
T
J
= 150 °C
T
J
= -55 °C
T
J
= 25 °C
Figure 4. Normalized On-Resistance vs. Temperature
0
20
40
60
80
100
120
140
160
180
200
-50 -25 025 50 75 100 125 150
On Resistance, RDS On (mOhms)
Junction Temperature, TJ(°C)
Conditions:
IDS = 20 A
t
p
< 200 µs
VGS = 15 V
VGS = 13 V
VGS = 11 V
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
4C3M0075120D Rev. A, 02-2019
Typical Performance
Figure 8. Body Diode Characteristic at -55 ºC
Figure 9. Body Diode Characteristic at 25 ºC
0
10
20
30
40
50
60
70
80
0246810 12 14
Drain-Source Current, I
DS
(A)
Gate-Source Voltage, V
GS
(V)
Conditions:
VDS = 20 V
tp < 200 µs
TJ= -55 °C
TJ= 25 °C
TJ= 150 °C
-80
-70
-60
-50
-40
-30
-20
-10
0
-10 -8 -6 -4 -2 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
J
= -55°C
t
p
< 200 µs
V
GS
= -2 V
V
GS
= -4 V
V
GS
= 0 V
-80
-70
-60
-50
-40
-30
-20
-10
0
-10 -8 -6 -4 -2 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
J
= 25°C
t
p
< 200 µs
V
GS
= -2 V
V
GS
= -4 V
V
GS
= 0 V
-80
-70
-60
-50
-40
-30
-20
-10
0
-10 -8 -6 -4 -2 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
J
= 150°C
t
p
< 200 µs
V
GS
= -2 V
V
GS
= -4 V V
GS
= 0 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-50 -25 025 50 75 100 125 150
Threshold Voltage, V
th
(V)
Junction Temperature T
J
(°C)
Figure 10. Body Diode Characteristic at 150 ºC
-4
0
4
8
12
16
010 20 30 40 50 60
Gate-Source Voltage, V
GS
(V)
Gate Charge, Q
G
(nC)
Conditions:
IDS = 20 A
IGS = 50 mA
VDS = 800 V
TJ= 25 °C
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristics
5C3M0075120D Rev. A, 02-2019
Typical Performance
Figure 15. 3rd Quadrant Characteristic at 150 ºC
Figure 13. 3rd Quadrant Characteristic at -55 ºC
-80
-70
-60
-50
-40
-30
-20
-10
0
-8 -7 -6 -5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
J
= -55 °C
t
p
< 200 µs
V
GS
= 10 V
V
GS
= 5 V
V
GS
= 15 V
V
GS
= 0 V
-80
-70
-60
-50
-40
-30
-20
-10
0
-8 -7 -6 -5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
J
= 25 °C
t
p
< 200 µs
V
GS
= 10 V
V
GS
= 5 V
V
GS
= 15 V
V
GS
= 0 V
-80
-70
-60
-50
-40
-30
-20
-10
0
-8 -7 -6 -5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
J
= 150 °C
t
p
< 200 µs
V
GS
= 10 V
V
GS
= 5 V
V
GS
= 15 V
V
GS
= 0 V
Figure 14. 3rd Quadrant Characteristic at 25 ºC
0
5
10
15
20
25
30
35
40
0200 400 600 800 1000
Stored Energy, E
OSS
(µJ)
Drain to Source Voltage, V
DS
(V)
Figure 16. Output Capacitor Stored Energy
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
1
10
100
1000
10000
050 100 150 200
Capacitance (pF)
Drain-Source Voltage, V
DS
(V)
C
iss
C
oss
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1 MHz
C
rss
1
10
100
1000
10000
0200 400 600 800 1000
Capacitance (pF)
Drain-Source Voltage, V
DS
(V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 1000V)
6C3M0075120D Rev. A, 02-2019
1E-3
10E-3
100E-3
1
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 10
Junction To Case Impedance, Z
thJC
(
o
C/W)
Time, t
p
(s)
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
Typical Performance
0
5
10
15
20
25
30
35
-55 -30 -5 20 45 70 95 120 145
Drain-Source Continous Current, I
DS (DC)
(A)
Case Temperature, T
C
(°C)
Conditions:
T
J
≤ 150 °C
0
20
40
60
80
100
120
-55 -30 -5 20 45 70 95 120 145
Maximum Dissipated Power, P
tot
(W)
Case Temperature, T
C
(°C)
Conditions:
T
J
≤ 150 °C
0.01
0.10
1.00
10.00
100.00
0.1 110 100 1000
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
100 µs
1 ms
10 µs
Conditions:
T
C
= 25 °C
D = 0,
Parameter: t
p
100 ms
Limited by R
DS On
Figure 22. Safe Operating Area
Figure 21. Transient Thermal Impedance
(Junction - Case)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
010 20 30 40 50
Switching Loss (mJ)
Drain to Source Current, I
DS
(A)
E
Off
E
On
E
Total
Conditions:
T
J
= 25 °C
V
DD
= 600 V
R
G(ext)
= 0 Ω
V
GS
= -4V/+15 V
FWD = C3M0075120D
L = 157 μH
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 600V)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 800V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 5 10 15 20 25 30 35 40 45
Switching Loss (mJ)
Drain to Source Current, I
DS
(A)
E
Off
E
On
E
Total
Conditions:
T
J
= 25 °C
V
DD
= 800 V
R
G(ext)
= 0 Ω
V
GS
= -4V/+15 V
FWD = C3M0075120D
L = 157 μH
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
7C3M0075120D Rev. A, 02-2019
Typical Performance
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0510 15 20 25
Switching Loss (mJ)
External Gate Resistor RG(ext) (Ohms)
E
Off
E
On
E
Total
Conditions:
T
J
= 25 °C
V
DD
= 800 V
I
DS
= 20 A
V
GS
= -4V/+15 V
FWD = C3M0075120D
L = 157 μH
0
20
40
60
80
100
120
0 5 10 15 20 25
Switching Times (ns)
External Gate Resistor RG(ext) (Ohms)
t
d(off)
Conditions:
T
J
= 25 °C
V
DD
= 800 V
I
DS
= 20 A
V
GS
= -4V/+15 V
FWD = C3M0075120D
L = 157 μH
t
r
t
f
t
d(on)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
025 50 75 100 125 150 175
Switching Loss (mJ)
Junction Temperature, T
J
(°C)
E
Off
E
On
E
Total
Conditions:
I
DS
= 20 A
V
DD
= 800 V
R
G(ext)
= 0 Ω
V
GS
= -4V/+15 V
FWD = C3M0075120D
FWD = (- - - -) C4D10120A
L = 157 μH
E
Off
E
Total
E
On
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 27. Switching Times vs. RG(ext)
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
Figure 28. Switching Times Denition
8C3M0075120D Rev. A, 02-2019
Test Circuit Schematic
Figure 29. Clamped Inductive Switching
Waveform Test Circuit
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.
9C3M0075120D Rev. A, 02-2019
Package Dimensions
Package TO-247-3
Recommended Solder Pad Layout
TO-247-3
POS Inches Millimeters
Min Max Min Max
A .190 .205 4.83 5.21
A1 .090 .100 2.29 2.54
A2 .075 .085 1.91 2.16
b .042 .052 1.07 1.33
b1 .075 .095 1.91 2.41
b2 .075 .085 1.91 2.16
b3 .113 .133 2.87 3.38
b4 .113 .123 2.87 3.13
c .022 .027 0.55 0.68
D .819 .831 20.80 21.10
D1 .640 .695 16.25 17.65
D2 .037 .049 0.95 1.25
E .620 .635 15.75 16.13
E1 .516 .557 13.10 14.15
E2 .145 .201 3.68 5.10
E3 .039 .075 1.00 1.90
E4 .487 .529 12.38 13.43
e.214 BSC 5.44 BSC
N 3 3
L .780 .800 19.81 20.32
L1 .161 .173 4.10 4.40
ØP .138 .144 3.51 3.65
Q .216 .236 5.49 6.00
S .238 .248 6.04 6.30
T9˚ 11˚ 9˚ 11˚
U9˚ 11˚ 9˚ 11˚
V2˚ 8˚ 2˚ 8˚
W2˚ 8˚ 2˚ 8˚
Pinout Information:
• Pin 1 = Gate
• Pin 2, 4 = Drain
• Pin 3 = Source
T U
WV
1010 C3M0075120D Rev. A, 02-2019
Copyright © 2019 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.wolfspeed.com/power
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
from the Product Documentation sections of www.cree.com.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac debrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air trafc control systems.
Notes
Related Links
• SPICE Models: http://wolfspeed.com/power/tools-and-support
• SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support
• SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support