THIS PAGE INTENTIONALLY LEFT BLANK
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 1
HMC758LP3 / 758LP3E
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
v00.1108
General Description
Features
Functional Diagram
Typical Applications
Electrical Specications, TA = +25° C, R1= 390Ω, R2= 560Ω*
Parameter Vdd = +3V Vdd = +5V Units
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Frequency Range 700 - 1700 1700 - 2200 700 - 1700 1700 - 2200 MHz
Gain 19 21.8 16 19.4 20 22.7 18 21.3 dB
Gain Variation Over Temperature 0.005 0.01 0.004 0.01 dB/ °C
Noise Figure 1.6 2.5 1.4 1.8 1.7 2.6 1.6 2.0 dB
Input Return Loss 15 13 14 14 dB
Output Return Loss 11 15 10 12 dB
Output Power for 1 dB
Compression (P1dB) 16 18 18 20 20.5 22.5 22 24 dBm
Saturated Output Power (Psat) 20 21.5 23.5 25 dBm
Output Third Order Intercept (IP3) 31 31.5 36 35 dBm
Supply Current (Idd) 80 102 130 80 102 130 190 227 260 190 227 260 mA
* R1 & R2 resistors set current, see application circuit herein
The HMC758LP3(E) is a GaAs pHEMT MMIC Low
Noise Amplier that is ideal for Cellular Infrastructure,
WiMAX & LTE/4G basestation front-end receivers
operating between 700 and 2200 MHz. The amplier
has been optimized to provide 1.7 dB noise gure,
21 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HMC758LP3(E) can
be biased with +3V to +5V and features an externally
adjustable supply current, which allows the designer
to tailor the linearity performance of the LNA for
each application.
Noise Figure: 1.7 dB
Gain: 22 dB
Output IP3: +37 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
16 Lead 3x3 mm SMT Package: 9 mm2
The HMC758LP3(E) is ideal for:
• Cellular Infrastructure, WiMAX & LTE/4G
• Software Dened Radios
• Repeaters and Femtocells
• Access Points
• Test & Measurement Equipment
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 2
Input Return Loss vs.
Temperature, Vdd = +5V
Output Return Loss vs.
Temperature, Vdd = +5V
Broadband Gain & Return Loss
HMC758LP3 / 758LP3E
v00.1108
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
Gain vs. Temperature, Vdd = +3V
Gain vs. Temperature, Vdd = +5V
Reverse Isolation vs.
Temperature, Vdd = +5V
-25
-20
-15
-10
-5
0
5
10
15
20
25
0123 456
Vdd=5V
Vdd=3V
FREQUENCY (GHz)
RESPONSE (dB)
S11
S21
S22
-20
-15
-10
-5
0
0.5 0.9 1.3 1.7 2.1 2.5
+25C
+85C
-40C
FREQUENCY (GHz)
RETURN LOSS (dB)
15
17
19
21
23
25
0.5 0.9 1.3 1.7 2.1 2.5
+25C
+85C
-40C
FREQUENCY (GHz)
GAIN (dB)
-20
-15
-10
-5
0
0.5 0.9 1.3 1.7 2.1 2.5
+25C
+85C
-40C
FREQUENCY (GHz)
RETURN LOSS (dB)
15
17
19
21
23
25
0.5 0.9 1.3 1.7 2.1 2.5
+25C
+85C
-40C
FREQUENCY (GHz)
GAIN (dB)
-60
-50
-40
-30
-20
-10
0
0.5 0.9 1.3 1.7 2.1 2.5
+25C
+85C
-40C
FREQUENCY (GHz)
ISOLATION (dB)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 3
HMC758LP3 / 758LP3E
v00.1108
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
Output IP3 and Supply Current vs.
Supply Voltage @ 900 MHz
Output IP3 vs. Output Power @ 900 MHz
[1] Measurement reference plane shown on evaluation PCB drawing.
Output IP3 vs. Temperature
Noise Figure vs. Temperature [1]
Output IP3 and Supply Current vs.
Supply Voltage @ 1900 MHz
Output IP3 vs. Output Power @ 1900 MHz
20
25
30
35
40
45
50
100
150
200
250
300
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
IP3
Idd
IP3 (dBm)
Idd (mA)
Voltage Supply (V)
0
0.5
1
1.5
2
2.5
3
0.5 0.9 1.3 1.7 2.1 2.5
Vdd=5V
Vdd=3V
FREQUENCY (GHz)
NOISE FIGURE (dB)
+85C
+25C
-40C
20
25
30
35
40
45
0.5 0.9 1.3 1.7 2.1 2.5
+25C
+85C
-40C
FREQUENCY (GHz)
IP3 (dBm)
Vdd=5V
Vdd=3V
20
25
30
35
40
45
50
100
150
200
250
300
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
IP3
Idd
IP3 (dBm)
Idd (mA)
Voltage Supply (V)
30
32
34
36
38
40
-10 -5 0 5 10
Vdd=3V
Vdd=5V
OUTPUT POWER (dBm)
IP3 (dBm)
30
31
32
33
34
35
36
-10 -5 0 5 10
Vdd=3V
Vdd=5V
OUTPUT POWER (dBm)
IP3 (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 4
Power Compression @ 1900 MHz [1]
HMC758LP3 / 758LP3E
v00.1108
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
Power Compression @ 1900 MHz [2]
Power Compression @ 900 MHz [1] Power Compression @ 900 MHz [2]
[1] Vdd = 5V [2] Vdd = 3V
-10
0
10
20
30
40
-20 -15 -10 -5 0 5 10
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), Gain (dB), PAE (%)
-5
0
5
10
15
20
25
-25 -20 -15 -10 -5 0
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), Gain (dB), PAE (%)
-5
0
5
10
15
20
25
-20 -15 -10 -5 0 5
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), Gain (dB), PAE (%)
-10
0
10
20
30
40
-20 -15 -10 -5 0 5 10
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), Gain (dB), PAE (%)
Vdd (V) R1 (Ohms) R2 (Ohms) Idd (mA)
3V 390 560 102
3V 1k 1.5k 85
3V 3.3k 4.7k 54
5V 390 560 227
5V 1k 1.5k 190
5V 3.3k 4.7k 124
Max Min
R1 (Ohms) R2 (Ohms) R1 (Ohms) R2 (Ohms)
3.9k 5.6k 270 470
Recommended Bias
Resistor Values for Idd
Absolute Min/Max Bias Resistor Range
Vdd (V) Idd (mA)
2.7 80
3 102
3.3 122
4.5 200
5 227
5.5 255
Note: Amplier will operate over full voltage range shown above.
Typical Supply Current vs.
Vdd (R1 = 390Ω, R2 = 560Ω)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 5
HMC758LP3 / 758LP3E
v00.1108
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +6 V
RF Input Power (RFIN)
(Vdd = +5V) +5 dBm
Channel Temperature 150 °C
Continuous Pdiss (T= 85 °C)
(derate 20 mW/°C above 85 °C) 1.3 W
Thermal Resistance
(channel to ground paddle) 50 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC758LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 758
XXXX
HMC758LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 758
XXXX
[1] Max peak reow temperature of 235 °C
[2] Max peak reow temperature of 260 °C
[3] 4-Digit lot number XXXX
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE
MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR
SUGGESTED LAND PATTERN.
Package Information
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 6
HMC758LP3 / 758LP3E
v00.1108
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
Pin Number Function Description Interface Schematic
1, 3 - 6,
7 - 10, 12, 14 N/C No connection required. These pins may be connected
to RF/DC ground without affecting performance.
2 RFIN This pin is DC coupled. An off-chip DC
blocking capacitor is required.
11 RFOUT This pin is DC coupled. An off-chip DC
blocking capacitor is required.
13 BIAS2
This pin is used to set the DC current of the second stage
amplier by selection of external bias resistor. See
application circuit.
15 Vdd Power Supply Voltage for the amplier. Bypass capacitors are
required. See application circuit.
16 BIAS1
This pin is used to set the DC current of the rst
stage amplier by selection of external bias resistor.
See application circuit.
Pin Descriptions
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 7
HMC758LP3 / 758LP3E
v00.1108
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 8
HMC758LP3 / 758LP3E
v00.1108
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
Evaluation PCB
Item Description
J1, J2 PCB Mount SMA RF Connector
J3, J4 DC Pin
C1 220 pF Capacitor, 0402 Pkg.
C2 10 pF Capacitor, 0402 Pkg.
C3 - C5 10 nF Capacitor, 0603 Pkg.
C6 2.2 µF Tantalum Capacitor
R1 390 Ohm Resistor, 0402 Pkg.
R2 560 Ohm Resistor, 0402 Pkg.
U1 HMC758LP3(E) Amplier
PCB [2] 121701 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR.
List of Materials for Evaluation PCB 121703 [1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
