AOD2610E/AOI2610E/AOY2610E 60V N-Channel AlphaSGT TM General Description Product Summary VDS * Trench Power AlphaSGTTM technology * Low RDS(ON) * Low Gate Charge * Low Eoss * ESD protected * RoHS and Halogen-Free Compliant 60V 46A ID (at VGS=10V) Applications RDS(ON) (at VGS=10V) < 9.5m RDS(ON) (at VGS=4.5V) < 13.3m Typical ESD protection HBM Class 2 100% UIS Tested 100% Rg Tested * High efficiency power supply * Secondary synchronus rectifier TO-251A IPAK TO-252 DPAK Top View Top View Bottom View TO251B Top View Bottom View D D Bottom View D D D G S G D G S G S S AOD2610E D G G AOI2610E D S S D G S AOY2610E Orderable Part Number Package Type Form Minimum Order Quantity AOD2610E AOI2610E AOY2610E TO-252 TO-251A TO-251B Tape & Reel Tube Tube 2500 4000 4000 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25C Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy VDS Spike I L=0.3mH C 10s TC=25C Power Dissipation B TC=100C Power Dissipation A TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.2.0: November 2016 IAS 17 A EAS 43 mJ 72 V 59.5 6.2 Steady-State RJA RJC W 4.0 TJ, TSTG Symbol Steady-State W 23.5 PDSM t 10s A 15 PD Junction and Storage Temperature Range A 19 VSPIKE TA=25C V 110 IDSM TA=70C 20 36.5 IDM TA=25C Units V 46 ID TC=100C Maximum 60 -55 to 150 Typ 15 40 1.7 www.aosmd.com Max 20 50 2.1 C Units C/W C/W C/W Page 1 of 6 AOD2610E/AOI2619E/AOY2610E Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V Typ 60 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=20V Gate Threshold Voltage VDS=VGS, ID=250A 1 TJ=55C VGS=10V, ID=20A 10 A 1.8 2.4 V 7.7 9.5 12.5 15.5 10.3 13.3 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=20A 52 VSD Diode Forward Voltage IS=1A, VGS=0V 0.72 IS Maximum Body-Diode Continuous Current G TJ=125C VGS=4.5V, ID=20A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=30V, f=1MHz f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg(10V) A 5 1.4 0.6 Units V VDS=60V, VGS=0V IDSS Max m m S 1 V 46 A 1100 pF 300 pF 28 pF 1.2 2.0 14.5 25 nC 7 13 nC Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 2.5 nC Qgd Gate Drain Charge 3.5 nC tD(on) Turn-On DelayTime 6.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=30V, ID=20A VGS=10V, VDS=30V, RL=1.5, RGEN=3 3.5 ns 22 ns 3 ns IF=20A, di/dt=500A/s 19 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/s 65 ns nC Body Diode Reverse Recovery Time A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA t 10s and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. I. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125C. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: November 2016 www.aosmd.com Page 2 of 6 AOD2610E/AOI2619E/AOY2610E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 4.5V 80 VDS=5V 4V 6V 80 60 ID (A) ID (A) 60 3.5V 40 125C 40 3.0V 20 20 25C VGS=2.5V 0 0 0 1 2 3 4 1 5 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 12 2 Normalized On-Resistance VGS=4.5V 10 RDS(ON) (m) 2 8 VGS=10V 6 1.8 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 0.8 4 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 35 1.0E+01 ID=20A 30 1.0E+00 125C 1.0E-01 20 IS (A) RDS(ON) (m) 25 125C 1.0E-02 15 25C 1.0E-03 10 5 1.0E-04 25C 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.2.0: November 2016 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOD2610E/AOI2619E/AOY2610E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1500 VDS=30V ID=20A Ciss 1200 Capacitance (pF) VGS (Volts) 8 6 4 2 900 600 Coss 300 0 0 3 6 9 12 Crss 0 15 0 Qg (nC) Figure 7: Gate-Charge Characteristics 20 30 40 50 60 VDS (Volts) Figure 8: Capacitance Characteristics 500 1000.0 TJ(Max)=150C TC=25C 10s 100.0 400 10.0 100s 1.0 1ms 10ms 0.0 0.01 0.1 300 200 DC TJ(Max)=150C TC=25C 0.1 Power (W) 10s RDS(ON) limited ID (Amps) 10 100 1 VDS (Volts) 10 100 0 0.0001 VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=2.1C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: November 2016 www.aosmd.com Page 4 of 6 AOD2610E/AOI2619E/AOY2610E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 50 60 Power Dissipation (W) 40 Current rating ID (A) 50 40 30 20 30 20 10 10 0 0 0 25 50 75 100 125 150 0 TCASE (C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (C) Figure 13: Current De-rating (Note F) 10000 TA=25C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: November 2016 www.aosmd.com Page 5 of 6 AOD2610E/AOI2619E/AOY2610E Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0: November 2016 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6