AOD2610E/AOI2610E/AOY2610E
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 46A
R
DS(ON)
(at V
GS
=10V) < 9.5mΩ
R
DS(ON)
(at V
GS
=4.5V) < 13.3mΩ
Typical ESD protection
HBM Class 2
Applications
100% UIS Tested
100% Rg Tested
AOI2610E
TO-251A
4000
60V N-Channel AlphaSGT
TM
Orderable Part Number Package Type Form Minimum Order Quantity
60V
• Trench Power AlphaSGT
TM
technology
• Low R
DS(ON)
• Low Gate Charge
• Low Eoss
• ESD protected
• RoHS and Halogen-Free Compliant
AOD2610E TO-252 Tape & Reel 2500
• High efficiency power supply
• Secondary synchronus rectifier
G
D
S
G
G
D
D
S
S
Top View
Bottom View
TO-251A
IPAK
G
S
D
G
S
DD
Top View
TO-252
DPAK
Bottom View
AOD2610E AOI2610E
G
DD
S
S
D
Top View Bottom View
TO251B
G
AOY2610E
Symbol
V
DS
V
GS
I
DM
I
AS
Avalanche energy L=0.3mH
C
E
AS
V
DS
Spike
I
V
SPIKE
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
TO-251B Tube 4000
AOI2610E
TO-251A
4000
T
A
=25°C
T
A
=70°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
Avalanche Current
C
Continuous Drain
Current
Thermal Characteristics
Parameter Max
T
A
=70°C 4.0
°C
Units
Junction and Storage Temperature Range -55 to 150
Typ
P
DSM
W
T
A
=25°C 6.2
Power Dissipation
A
Maximum Junction-to-Ambient
A
°C/W
R
θJA
15
40
20
15
mJ43
19
46
V
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
±20
V
Maximum Units
Continuous Drain
Current
G
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
1.7
50
2.1
W
I
D
V
A17
A
110
I
DSM
AOY2610E
Power Dissipation
B
23.5
T
C
=100°C
10µs
P
D
60
72
59.5
Gate-Source Voltage
Pulsed Drain Current
C
36.5
Parameter
Drain-Source Voltage
Rev.2.0: November 2016
www.aosmd.com Page 1 of 6
AOD2610E/AOI2619E/AOY2610E
Symbol Min Typ Max Units
BV
DSS
60 V
V
DS
=60V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±10 µA
V
GS(th)
Gate Threshold Voltage 1.4 1.8 2.4 V
7.7 9.5
T
J
=125°C 12.5 15.5
10.3 13.3 mΩ
g
FS
52 S
V
SD
0.72 1 V
I
S
46 A
C
iss
1100 pF
C
oss
300 pF
C
rss
28 pF
R
g
0.6 1.2 2.0 Ω
Q
g
(10V)
14.5 25 nC
Q
g
(4.5V)
7 13 nC
Q
gs
2.5 nC
Q
gd
3.5 nC
t
D(on)
6.5 ns
t
r
3.5 ns
t
D(off)
22 ns
t
f
3
ns
mΩ
V
GS
=10V, V
DS
=30V, I
D
=20A
Total Gate Charge
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Gate resistance f=1MHz
I
DSS
µAZero Gate Voltage Drain Current
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
Gate Source Charge
Gate Drain Charge
Total Gate Charge
SWITCHING PARAMETERS
Turn-On DelayTime
V
DS
=0V, V
GS
=±20V
Maximum Body-Diode Continuous Current
G
Input Capacitance
Gate-Body leakage current
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=30V, R
L
=1.5Ω,
R
GEN
=3Ω
Diode Forward Voltage
DYNAMIC PARAMETERS
V
GS
=4.5V, I
D
=20A
Turn-On Rise Time
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=30V, f=1MHz
V
DS
=V
GS,
I
D
=250µA
Output Capacitance
Forward Transconductance
I
S
=1A, V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=10V, I
D
=20A
t
f
3
ns
t
rr
19 ns
Q
rr
65 nC
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=20A, di/dt=500A/µs
Turn-Off Fall Time
I
F
=20A, di/dt=500A/µs
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°
C.
I. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.
Rev.2.0: November 2016 www.aosmd.com Page 2 of 6
AOD2610E/AOI2619E/AOY2610E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
12345
ID (A)
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
4
6
8
10
12
0 5 10 15 20 25 30
RDS(ON) (mΩ)
I
D
(A)
Figure 3: On
-
Resistance vs. Drain Current and Gate
0.8
1
1.2
1.4
1.6
1.8
2
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On
-
Resistance vs. Junction Temperature
VGS=4.5V
ID=20A
VGS=10V
ID=20A
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
0
20
40
60
80
100
012345
ID(A)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
VGS=2.5V
3.0V
4.5V
10V
4V
3.5V
6V
D
Figure 3: On
-
Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
25°C
125°C
Figure 4: On
-
Resistance vs. Junction Temperature
(Note E)
0
5
10
15
20
25
30
35
2 4 6 8 10
RDS(ON) (mΩ)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125°C
Rev.2.0: November 2016 www.aosmd.com Page 3 of 6
AOD2610E/AOI2619E/AOY2610E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
100
200
300
400
500
0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction
-
to
-
0
2
4
6
8
10
0 3 6 9 12 15
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
300
600
900
1200
1500
0 10 20 30 40 50 60
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=30V
ID=20A
TJ(Max)=150°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
V
> or equal to 4.5V
10µs
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100
µ
s
10ms
Figure 10: Single Pulse Power Rating Junction
-
to
-
Case (Note F)
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
DM
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
V
GS
> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
RθJC=2.1°C/W
Rev.2.0: November 2016 www.aosmd.com Page 4 of 6
AOD2610E/AOI2619E/AOY2610E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
70
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
10
20
30
40
50
0 25 50 75 100 125 150
Current rating ID (A)
TCASE (°C)
Figure 13: Current De-rating (Note F)
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
TA=25°C
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
DM
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
RθJA=50°C/W
Rev.2.0: November 2016 www.aosmd.com Page 5 of 6
AOD2610E/AOI2619E/AOY2610E
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
L
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Figure A: Gate Charge Test Circuit & Waveforms
Figure B: Resistive Switching Test Circuit & Waveforms
Figure C: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
Vgs
Vds
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Figure D: Diode Recovery Test Circuit & Waveforms
Rev.2.0: November 2016 www.aosmd.com Page 6 of 6