J/SST/U308 Series Vishay Siliconix N-Channel JFETs J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 -1 to -6.5 J309 -1 to -4 -25 8 12 -25 10 J310 12 -2 to -6.5 -25 8 24 SST308 -1 to -6.5 -25 8 12 SST309 -1 to -4 -25 10 12 SST310 -2 to -6.5 -25 8 24 U309 -1 to -4 -25 10 12 U310 -2.5 to -6 -25 10 24 FEATURES BENEFITS APPLICATIONS D Excellent High Frequency Gain: Gps 11.5 dB @ 450 MHz D Very Low Noise: 2.7 dB @ 450 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D D D D D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches DESCRIPTION and is available with tape-and-reel options. The U series hermetically-sealed TO-206AC (TO-52) package supports full military processing. (See Military and Packaging Information for further details.) The J/SST/U308 series offers superb amplification characteristics. Of special interest is its high-frequency performance. Even at 450 MHz, this series offers high power gain at low noise. Low-cost J series TO-226AA (TO-92) packaging supports automated assembly with tape-and-reel options. The SST series TO-236 (SOT-23) package provides surface-mount capabilities TO-226AA (TO-92) D 1 S 2 G 3 For similar dual products packaged in the TO-78, see the U430/431 data sheet. TO-206AC (TO-52) TO-236 (SOT-23) D S 1 3 Top View J308 J309 J310 S 1 G 2 Top View SST308 (Z8)* SST309 (Z9)* SST310 (Z0)* *Marking Code for TO-236 2 3 D G and Case Top View U309 U310 For applications information see AN104. Document Number: 70237 S-04028--Rev. G, 04-Jun-01 www.vishay.com 7-1 J/SST/U308 Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate Current : (J/SST Prefixes) . . . . . . . . . . . . . . . . . . . . 10 mA (U Prefix) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature : (J/SST Prefixes) . . . . . . . . . . . . . . -55 to 150_C (U Prefix) . . . . . . . . . . . . . . . . . . . . -65 to 175_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C (J/SST Prefixes)a . . . . . . . . . . . . . . . . . 350 mW (U Prefix)b . . . . . . . . . . . . . . . . . . . . . . . 500 mW Power Dissipation : Notes a. Derate 2.8 mW/_C above 25_C b. Derate 4 mW/_C above 25_C SPECIFICATIONS FOR J/SST308, J/SST309 AND J/SST310 (TA = 25_C UNLESS NOTED) Limits J/SST308 Parameter Symbol Test Conditions Typa V(BR)GSS IG = -1 mA , VDS = 0 V -35 VGS(off) VDS = 10 V, ID = 1 nA J/SST309 Min Max Min J/SST310 Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current Drain-Source On-Resistance Gate-Source Forward Voltage IDSS IGSS TA = 125_C -25 -25 V -1 -6.5 -1 -4 -2 -6.5 V 12 60 12 30 24 60 mA -0.002 -1 -1 -1 nA -0.001 -1 -1 -1 mA VDS = 10 V, VGS = 0 V VGS = -15 V, VDS = 0 V -25 IG VDG = 9 V, ID = 10 mA -15 pA rDS(on) VGS = 0 V, ID = 1 mA 35 W VGS(F) IG = 10 mA VDS = 0 V J 0.7 1 1 1 V Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en 14 VDS = 10 V, ID = 10 mA f = 1 kHz VDS = 10 V VGS = -10 V f = 1 MHz 8 10 mS 110 250 250 250 5 5 5 2.5 2.5 2.5 J 4 SST 4 J 1.9 SST 1.9 VDS = 10 V, ID = 10 mA f = 100 Hz 8 6 mS pF nV Hz High Frequency Common-Gate Forward Transconductance f = 105 MHz gfg Common-Gate Output Conductance gog Common-Gate Power Gainc Gpg Noise Figure NF VDS = 10 V ID = 10 mA 13 f = 105 MHz 0.16 f = 450 MHz 0.55 f = 105 MHz 16 f = 450 MHz 11.5 f = 105 MHz 1.5 f = 450 MHz 2.7 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. Gain (Gpg) measured at optimum input noise match. www.vishay.com 7-2 14 f = 450 MHz mS dB NZB Document Number: 70237 S-04028--Rev. G, 04-Jun-01 J/SST/U308 Series Vishay Siliconix SPECIFICATIONS FOR U309 AND U310 (TA = 25_C UNLESS NOTED) Limits U309 Parameter Symbol Test Conditions Typa Min V(BR)GSS IG = -1 mA , VDS = 0 V -35 -25 VGS(off) VDS = 10 V, ID = 1 nA IDSS VDS = 10 V, VGS = 0 V U310 Max Min Max Unit -1 -4 -2.5 -6 V 12 30 24 60 mA Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb VGS = -15 V, VDS = 0 V Gate Reverse Current Gate Operating Current IGSS TA = 125_C -25 V -0.002 -0.15 -0.15 nA -0.001 -0.15 -0.15 mA IG VDG = 9 V, ID = 10 mA -15 pA Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA 35 W Gate-Source Forward Voltage VGS(F) IG = 10 mA , VDS = 0 V 0.7 1 1 V Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en 14 VDS = 10 V, ID = 10 mA f = 1 kHz VDS = 10 V, VGS = -10 V f = 1 MHz VDS = 10 V, ID = 10 mA f = 100 Hz 10 mS 10 110 250 250 4 5 5 1.9 2.5 2.5 mS pF nV Hz 6 High Frequency Common-Gate Forward Transconductance Common-Gate Output Conductance gfg gog VDS = 10 V ID = 10 mA Common-Gate Power Gainc Gpg f = 105 MHz 14 f = 450 MHz 13 f = 105 MHz 0.16 f = 450 MHz 0.55 f = 105 MHz 16 14 14 f = 450 MHz 11.5 10 10 f = 105 MHz 1.5 2 2 f = 450 MHz 2.7 3.5 3.5 mS dB Noise Figure NF Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. Gain (Gpg) measured at optimum input noise match. Document Number: 70237 S-04028--Rev. G, 04-Jun-01 NZB www.vishay.com 7-3 J/SST/U308 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage Gate Leakage Current 50 80 40 60 30 gfs 40 20 IDSS 20 10 0 -2 -1 -3 -4 IGSS @ 125_C 100 pA 200 mA 10 pA 10 mA TA = 25_C 1 pA IGSS @ 25_C 0.1 pA 0 -5 3 6 9 12 15 VGS(off) - Gate-Source Cutoff Voltage (V) VDG - Drain-Gate Voltage (V) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage Common-Source Forward Transconductance vs. Drain Current 100 300 20 240 60 180 rDS gos 40 120 20 60 rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz gos - Output Conductance (mS) 80 gfs - Forward Transconductance (mS) VGS(off) = -3 V 0 0 -1 0 -2 -3 -4 VDS = 10 V f = 1 kHz 16 TA = -55_C 12 25_C 8 125_C 4 0 -5 0.1 1 VGS(off) - Gate-Source Cutoff Voltage (V) 10 ID - Drain Current (mA) Output Characteristics Output Characteristics 15 30 VGS(off) = -3 V VGS(off) = -1.5 V VGS = 0 V 12 VGS = 0 V 24 ID - Drain Current (mA) ID - Drain Current (mA) 200 mA TA = 125_C 1 nA 0 0 rDS(on) - Drain-Source On-Resistance ( ) IG @ ID = 10 mA IG - Gate Leakage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 10 nA gfs - Forward Transconductance (mS) IDSS - Saturation Drain Current (mA) 100 -0.2 V 9 -0.4 V 6 -0.6 V -0.8 V 3 -0.4 V 18 -0.8 V -1.2 V 12 -1.6 V 6 -2.0 V -2.4 V -1.0 V 0 0 0 0.2 0.4 0.6 VDS - Drain-Source Voltage (V) www.vishay.com 7-4 0.8 1 0 0.2 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V) Document Number: 70237 S-04028--Rev. G, 04-Jun-01 J/SST/U308 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics Output Characteristics 20 50 VGS(off) = -1.5 V VGS(off) = -3 V VGS = 0 V VGS = 0 V 40 -0.2 V 12 ID - Drain Current (mA) ID - Drain Current (mA) 16 -0.4 V 8 -0.6 V -0.8 V 4 -0.4 V 30 -0.8 V -1.2 V 20 -1.6 V 10 -2.0 V -1.0 V -2.4 V 0 0 0 4 2 6 8 10 0 2 VDS - Drain-Source Voltage (V) Transfer Characteristics 8 10 100 VGS(off) = -1.5 V VDS = 10 V VGS(off) = -3 V VDS = 10 V 80 ID - Drain Current (mA) 24 ID - Drain Current (mA) 6 Transfer Characteristics 30 TA = -55_C 18 25_C 12 125_C 6 TA = -55_C 60 25_C 40 125_C 20 0 0 0 -0.4 -0.8 -1.2 -1.6 -2 0 -0.6 VGS - Gate-Source Voltage (V) -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltage 30 50 24 VDS = 10 V f = 1 kHz VGS(off) = -3 V gfs - Forward Transconductance (mS) VGS(off) = -1.5 V gfs - Forward Transconductance (mS) 4 VDS - Drain-Source Voltage (V) TA = -55_C 25_C 18 125_C 12 6 0 VDS = 10 V f = 1 kHz 40 TA = -55_C 30 25_C 20 125_C 10 0 0 -0.4 -0.8 -1.2 -1.6 VGS - Gate-Source Voltage (V) Document Number: 70237 S-04028--Rev. G, 04-Jun-01 -2 0 -0.6 -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V) www.vishay.com 7-5 J/SST/U308 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current 100 VGS(off) = -1.5 V 60 40 VGS(off) = -3 V Assume VDD = 15 V, VDS = 5 V RL + 60 VGS(off) = -1.5 V 20 20 VGS(off) = -3 V 0 1 10 100 0.1 1 10 ID - Drain Current (mA) ID - Drain Current (mA) Common-Source Input Capacitance vs. Gate-Source Voltage Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 15 10 12 VDS = 0 V 9 6 VDS = 5 V 3 f = 1 MHz Crss - Reverse Feedback Capacitance (pF) f = 1 MHz 8 6 VDS = 0 V 4 2 VDS = 5 V 0 0 0 -8 -4 -12 -16 -20 0 VGS - Gate-Source Voltage (V) -8 -4 -12 -16 -20 VGS - Gate-Source Voltage (V) Input Admittance vs. Frequency 100 Forward Admittance vs. Frequency 100 gig -gfg 10 (mS) (mS) 10 big 1 bfg 1 TA = 25_C VDG = 10 V ID = 10 mA Common-Gate TA = 25_C VDG = 10 V ID = 10 mA Common-Gate 0.1 0.1 100 200 500 f - Frequency (MHz) www.vishay.com 7-6 10 V ID 40 0 Ciss - Input Capacitance (pF) g fs R L AV + 1 ) R g L os 80 80 AV - Voltage Gain rDS(on) - Drain-Source On-Resistance ( ) 100 1000 100 200 500 1000 f - Frequency (MHz) Document Number: 70237 S-04028--Rev. G, 04-Jun-01 J/SST/U308 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Admittance vs. Frequency Reverse Admittance vs. Frequency 100 10 TA = 25_C VDG = 10 V ID = 10 mA Common-Gate TA = 25_C VDG = 10 V ID = 10 mA Common-Gate 10 1 bog (mS) (mS) -brg +grg -grg 0.1 gog 1 0.1 0.01 100 200 500 100 1000 200 Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current 150 20 VGS(off) = -3 V 16 gos - Output Conductance (S) Hz VDS = 10 V en - Noise Voltage nV / 1000 500 f - Frequency (MHz) f - Frequency (MHz) 12 ID = 1 mA 8 ID = 10 mA 4 VDS = 10 V f = 1 kHz 120 90 TA = -55_C 60 25_C 30 125_C 0 0 10 100 1k f - Frequency (Hz) Document Number: 70237 S-04028--Rev. G, 04-Jun-01 10 k 100 k 0.1 1 10 ID - Drain Current (mA) www.vishay.com 7-7