2011-09-191
BCP69-25
1
2
3
4
PNP Silicon AF Transistor
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary type: BCP68 (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
Type Marking Pin Configuration Package
BCP69-25 ...-25* 1=B 2=C 3=E 4=C - - SOT223
* Marking is the same as type-name
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 20 V
Collector-emitter voltage VCES 25
Collector-base voltage VCBO 25
Emitter-base voltage VEBO 5
Collector current IC1 A
Peak collector current, tp 10 ms ICM 2
Base current IB100 mA
Peak base current IBM 200
Total power dissipation-
TS 114 °C
Ptot 3 W
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS 12 K/W
2011-09-192
BCP69-25
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 30 mA, IB = 0
V(BR)CEO 20 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 25 - -
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
V(BR)CES 25 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
100
µA
DC current gain2)
IC = 5 mA, VCE = 10 V
IC = 500 mA, VCE = 1 V, BCP69-16
IC = 500 mA, VCE = 1 V, BCP69-25
IC = 1 A, VCE = 1 V
hFE
50
100
160
60
-
160
250
-
-
250
375
-
-
Collector-emitter saturation voltage2)
IC = 1 A, IB = 100 mA
VCEsat - - 0.5 V
Base-emitter voltage2)
IC = 5 mA, VCE = 10 V
IC = 1 A, VCE = 1 V
VBE(ON)
-
-
0.6
-
-
1
AC Characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 100 MHz
fT- 100 - MHz
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2Pulse test: t < 300µs; D < 2%
2011-09-193
BCP69-25
DC current gain hFE = ƒ(IC)
VCE = 1 V
10
EHP00285BCP 69
04
10
mA
0
10
3
10
5
5
10
1
10
2
10
1
C
FE
h
Ι
2
10
˚C
5
100
25 ˚C
˚C
-50
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
0
10
EHP00286BCP 69
CEsat
V
0.4 V 0.8
0
10
1
10
2
4
10
5
5
Ι
C
mA
5
3
10
0.2 0.6
˚C
100
25
˚C
-50
˚C
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
0
10
EHP00287BCP 69
BEsat
V
0
4
10
Ι
C
mA
0.2
1
10
2
10
3
10
0.4 0.6 0.8 1.2V
˚C
100
25
˚C
-50
˚C
Collector cutoff current ICBO = ƒ(TA)
VCBO = 25 V
0
10
EHP00284BCP 69
A
T
150
0
5
10
Ι
CBO
nA
50 100
1
10
2
10
4
10
˚C
typ
max
10
3
2011-09-194
BCP69-25
Transition frequency fT = ƒ(IC)
VCE = 5 V
10
EHP00283BCP 69
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
ts
0
0.5
1
1.5
2
2.5
W
3.5
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
RthJS
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
2011-09-195
BCP69-25
Package SOT223
Package Outline
Foot Print
Marking Layout (Example)
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
123
3
4
±0.1
±0.04
0.5 MIN.
0.28
0.1 MAX.
15˚ MAX.
6.5±0.2
A
4.6
2.3
0.7 ±0.1
0.25 MA
1.6±0.1
7
±0.3
B0.25 M
±0.2
3.5
B
3.5
1.4 4.8 1.4
1.11.2
80.3 MAX.
6.8
7.55
12
1.75
Pin 1
Manufacturer
0...10˚
2011-09-196
BCP69-25
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
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For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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