Numerical Index 2N3262-2N3371 =| > MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS i= = = = = || REPLACE- | PAGE Po 7B] Ty | Vee | Vee |= tre @ Ic Voeisan @ le 2) _ le We 2 /5| ment | numper | USE 3 2 al |B} 23 =\o @ 25C | BS] C | Wwolts) | (volts) |S | (min) (max) 5} (volts) = 3 s\s 2N3262 S| N HSS | 8.75W| C | 200 100 80] 0 40 O.5A 0.6 1L.0A 150M | T 2N3263 S|] N PMS 75W | Cc | 200 150 90,0 20 55 15A 1.0 20A 20M | T 2N3264 S|N PMS 75w | c | 200 120 60] 0 20 80 5A 1.6 20A 20M |T 2N3265 S|N PMS 125W]} Cc | 200 150 90) 0 20 55 15A 1.0 20A 20M | T 2N3266 S| N PMS 125W |] C | 200 120 60/0 20 80 15A 1.6 20A 20M | T 2N3267 Gy] P RFA 75M | A | 100 15 8.0] 0 10} 500 3.0M IS |E 900M | T 2N3268 S| N AFA | 0.15W | A | 200 45 4510 12 80 LOM 1.0 5.0M 40 }E 2.5M]B 2N3269 thru Thyristors, see Table on Page 1-154 2N3276 pneree Field Effect Transistors, see Table on Page 1-166 2N3279 G| P 9-49 RFA O.1W} A] 100 30 20]0 10 70 3,0M 0.3 5.0M LO|E 400M | T 2N3280 G| P 9-49 RFA 0.1W{ A} 100 30 20] 0 10 70 3.0M 0.3 5.0M lO) E 400M | T 2N3281 Gy] P 9-49 RFA O.1W] A] LOO 30 15] 0 10 | 100 3.0M 0.5 5.0M lO] E 300M | T 2N3282 G| P 9-49 RFA O.1W] A} LOO 30 15] 0 10 | 100 3.0M 0.5 5.0M LO] E 300M | T 2N3283 G| P 9-51 RFC O.1W yA } 100 25 25)]8 10 3.0M 10 | E 250M | T 2N3284 G|P 9-51 RFC O.1W | A f 100 25 25]S8 10 3.0M 1O|E 250M | T 2N3285 Gy] P 9-51 RFC O.1W {A } 100 20 20}S5]5.0 3.0M 5.0]/E 250M | T 2N3286 G| P 9-51 RFC O,1lw] A} 100 20 20}S ]5.0 3.0M 5.0]E 250M | T 2N3287 SIN 9-54 REA 0.2W | At 200 40 2010 15] 100 2.0M 0,3 5.0M I5|/E 350M | T 2N3288 S| N 9454 RFA 0.2W] A] 200 40 20]0 15 | 100 2,0M} 0.3 5.0M I5|E 350M | T 2N3289 S| N 9-54 REA 0.2W | A |} 200 30 15) 0 10 | 150 2.0M 0.4 5,0M LO] E 300M | T 2N3290 Sj WN 9-54 RFA Q.2W | A | 200 30 15 |0 10 {150 2.0M] 0.4 50M 10/E 300M | T 2N3291 S|N 9-56 RFC 0.2W | A | 200 25 25 |S 10 2.0M 10 | E 250M | T 2N3292 S]N 9-56 RFC 0.2W | A | 200 25 2518 10 2.0M 10 | E 250M | T 2N3293 S|] N 9-56 RFC 0.2W | A | 200 20 20]S 10 2,0M 10/E 250M | T 2N3294 S|N 9-56 RFC 0.2W | A | 200 20 20/8 10 2,.0M 1lO/E 250M | T 2N3295 S|N 9-58 MPA 800M | A | 175 60 60] 5S 20 60 10M 0.5 0.154 200M | T 2N3296 SEN 9-61 MPA 700M | A} 175 60 60}S]5.0 50 40M 0.5 0.44 LOOM | T 2N3297 S| N 9-64 MPA 25W | Cc] 175 60 60 |S 42.5 35 0.44 0.5 1.0A LOOM | T 2N3298 S|N 9-67 HPA L.0W | C] 175 25 15 | 0 80 | 240 10M 200M | T 2N3299 S| N 8-219] HSS 0.8W | A | 200 60 30] 0 40 | 120] 0.154 | 0.22 0.15A 250M | T 2N3300 S|N 8-219} HSS 0.8W] A | 200 60 30 | O | 100 } 300 | 0.15A | 0.22 0.154 250M | T 2N3301L S| N 8-219] HSS | 0.36W | A | 200 60 30] 0 40 | 120 | 0.15A | 0.22 O.15A 250M | T 2N3302 S|[N 8-219} HSS | 0.36W | A | 200 60 30 | O | 100 | 300 |] 0.154 | 0.22 0,158 250M | T 2N3303 S| N 8-221] HSS 0.6W]} A | 200 25 12 | 0 30 | 120 0.34 10.33 O.3A 450M | T 2N3304 S| P 8-223} MSS 0.3W | A | 200 6.0 6.0]0 30] 120 LOM | 0.16 LOM 500M | T 2N3305 S| P AFA 0.6W | A | 200 50 40] 0 40 | 120 0,1M 0.2 10M 40/E 20M | T 2N3306 S| P AFA 0.6W | A | 200 50 40 | 0 | 100 | 300 0.1M 0.2 10M 70] E 20M | T 2N3307 S| P 9-69 RFA 0.2W | A | 200 40 35] 0 40 | 250 2.0M 0.4 3.0M 40/E 300M | T 2N3308 S| P 9-69 RFA 0.2W | A | 200 30 25] 0 25 | 250 2.0M 0.4 3.0M 25 ]/E 300M | T 2N3309 S|} N | 2N3553 9-74 MPA 3.5W] C4175 50 50] S |5.0} 100 30M 0.5 0.25A 300M | T 2N3309A4 | S| N | 2N3553 9-74 HPA 5.OW | c } 200 60 60/S ]8.0 80 50M] 0.5 0.254 300M | T 2N3310 S| N HPA 0.3W | A | 200 35 15] 0 10 20M 0.5 20M 300M | T 2N3311 G| P 7-108] LPA 170W | C |; 110 30 30/58 60 | 120 3.0A o.1 3.0A 30 )E L.OK]E 2N3312 G| P 7-108] LPA 170w | | 110 45 45 | Ss 60 | 120 3.0A O.L 3.0A 30]E 1.0K/E 2N3313 G| P 7-108] LPA 170W | Cc } 110 60 60 |S 60 | 120 3.0A O.1 3.0A 30/E L.OK | E 2N3314 Gj P 7~108| LPA 170W | c | 110 30 30] S | 100 | 200 3.0A a.1 3.0A 40/E 1.0K] E 2N3315 Gi] P 7-108) LPA 170W | c | 110 45 45 |S 1100] 200 3.0A O.1 3.0A 40 |E 1.0K] E 2N3316 Gi P 7-108; LPA L70W | C; 110 60 60; 5 ; LOQ; 200 3.0A Q.t 3.0A 40,5 LOK] E 2N3317 Ss] P CHP | 0.15W | A | 140 30 30] 0 6.4M | T 2N3318 s| P CHP | 0.15W | A | 140 15 15] 0 7,.6M/T 2N3319 Ss] P CHP | 0.15W] A | 140 10 6.0] 0 12M | T 2N3320 G| P HSS 60M | A | 100 15 10 | 0 50 20M | 0.19 40M 600M | T 2N3321 Gy] P HSS 60M | A | 100 12 7.0] 0 | 100 1oM | 0.12 10M 600M | T 2N3322 G| P HSs 60M | A} 100 12 7.0] 0 30 40M | 0.25 20M 600M | T 2N3323 G| P 9n71 RFC | 0.15W | A | 100 35 35 |S 30 | 200 3,0M 30]/E 200M | T 2N3324 G| P G71 RFC | 0.15W | A | 100 35 35/8 30 | 200 3.0M 30] E 200M | T 2N3325, G|P 9-71 | RFC] 0.15W| A | 100 35 35 |S 30 | 200 3.0M 30, E 200M | T 2N3326 S] Nj 2N2218A 8-114] HSA 0.8W] A] 175 60 4510 40] 120] 0.15A 0.4 0.154 250M | T 2N3327 S| N HPA 20W | C | 200 65 6510 10 O.5A 100M | T 2N3328 oNaa x6 Field Effect Transistors, see Table on Page 1-166 N333 2N3337 SS} N | 2N3287 9-54 RFA 0.3W |] A | 200 40 40] 0 30 | 300 4.0M 30/E 400M { T 2N3338 S| N | 2N3289 9-54 RFA 0.3W] A | 200 40 40] 0 30 | 300 4,0M 30] E 400M | T 2N3339 S| Nj 2N3288 9-54 RFA 0.3W} A | 200 40 40] 0 30 | 300 4.0M 30/ E 400M | T 2N3340 Ss; N MSS 0.4W 7] A | 175 30 20} 0 40 1o* 0.2 10* 70M | T 2N3341 S| P MSS 0.4W 7) A | 175 30 2010 40 Lo* | 0.25 10* 50M | T 2N3342 Ss} P MSS | 0,25W] A} 175 20 8.0} 0 30 5,0M 0.1 5.0M 2N3343 Ss}; P CHP | 0.25W] A | 175 25 8.0] 0 20 0.25M 2.0M| T 2N3344 S| P CHP | 0.25W] A | 175 30 30] 0 25 1.0M 2.0M| T 2N3345 S| P CHP | 0.25W] A} 175 50 50] 0 15 1.0M 2.0M| T 2N3346 S| P CHP | 0.25W] A] 175 50 50] 0 25 1.0M 2.0M/ T 2N3347 S| P DFA 300M | A | 175 60 45] 0 40 | 300 10* 0.5 10M 60] E 60M | T 2N3348 S| P DFA 300M | A | 175 60 4510 40 | 300 10* 0.5 10M 60} E 60M | T 2N3349 S| P DFA 300M | A | 175 60 45/0 40 | 300 10* 0.5 10M 60} E 60M| T 2N3350 S| P DFA 300M] A | 175 60 45 | 0] 100] 300 10* 0.5 10M 150] E 60M | T 2N33521 Ss] P DFA 300M | A | 175 60 45 | 0] 100] 300 10* 0.5 10M 150] E 60M | T 2N3352 si P DFA 300M] A | 175 60 45 | 0 | 100] 300 10* 0.5 10M 150] E 60M | T 2N3353 thru Thyristors, see Table on Page 1-154 2N3364 2N3365 thru Field Effect Transistors, see Table on Page 1-166 2N3370 2n3371 | G| P| | [eral isom]a|ioo{| 25| 10}/o| 20| 300] 12m 25{ | 320M 1-138 RF Transistors RF POWER TRANSISTORS (Listed in order of operating test frequency and power output) ALL SILICON NPN f Pout @ Pin Type MHz Ww Ww 2N3295 30 0.3 0.012 2N3296 30 3.0 0.075 2N3297 30 12 1.2 2N2948 30 15 2.0 2N2951, 52 50 0.6 O.1 2N2949, 50 50 3.5 0.35 2N2947 50 15 2.0 2N3950 50 50 4.5 2N3298 30 0.1 - 2N3375 100 7.5 1.0 2N3818 100 15 3.0 2N3553 175 2.5 0.25 2N3961 175 4.0 0.5 2N3924 175 4.0 1.0 2N3925 175 5.0 1.3 2N3926 175 7.0 2.0 2N3927 175 12 4.0 2N3632 175 13.5 3.5 2N3137 250 0.7 0.1 2N3664 250 2.2 0.4 2N3866 400 1.0 0.1 2N3948 400 1.0 90.25 2N4012 400 3.0 (typ) 1.0 2N3375 400 3. 0 (min) 1.0 2N3733 400 10 4.0 HIGH-VOLTAGE TRANSISTORS fp (MHz) @ Ic Type Vcro min max mA 2N4924 100 100 500 20 2N4925 150 100 500 20 2N4926 200 30 300 10 2N4927 250 30 300 10 9-7 BCWwWC WW. KL)[N XQ ,' $)p0D0) 'DYi MWiwyWV BWwiwyisXsiidd;i WM WW- RF Transistors 2N3295 (SILICON) P.,= 0.3 W PEP @ 30 MHz ln = 32 dB @ 30 MHz NPN silicon annular Star transistor for linear am- plifier applications from 2 to 100 MHz. Collector connected to case CASE 31 {TO-5) MAXIMUM RATINGS* Rating Symbol Rating Unit Collector-Base Voltage Von 60 Vde Collector-Emitter Voltage Vors 60 Vde | Emitter-Base Voltage Ver 5 Vde Collector Current (Continuous) Io 250 mAdc Base Current (Continuous) Ip 50 mAdc Total Device Dissipation Pp (25C Case Temperature) Cc 2 Watts Derate above 25C 13.3 mWw/Cc Total Device Dissipation Pp (25C Ambient Temperature) D 0.8 Watts Derate above 25C 5. 33 mwW/C Junction Temperature Range T; -65 to 175 C Storage Temperature Range Tete -65 to 175 C *The maximum ratings as given for DC conditions can be exceeded ona pulse basis. See Electrical Characteristics. 9-58~ RF Transistors 2N3295 (Continued) ELECTRICAL CHARACTERISTICS (At 25C unless otherwise noted ) Characteristic Symbol Rating Min {Typt Max} Unit Vor = 60Vdc, Var =0 ~- [--] 100 | Adc Collector-Emitter Current lors = 50 y -0 Vor = Vdc, BE Ms To = 175C -- |-- | 500 ]4& Ade Collector Cutoff Current lopo Vop = 30Vde, 1, = 0 -- | --) 0.1 Ju Ade Emitter Cutoff Current 15BO Vip 7 Vdc, I, = 0 -- | --}] 100 | Adc I, = 10mAde, DC Current Gain hee Vor = 10Vdc 20 -- 60 -- In = 150mAdc, Vor = 10Vdc * 20 |-- | -- -- Collector-Emitter Vor(sat) | Ic = 150mAdc, Vde Saturation Voltage Ip = 15mAdc -- |--| 0.5 Base-Emitter VeE(sat) Io = 150mAdc, Saturation Voltage I, = 15mAdc -- |--] 2.0] Vdc Collector-Emitter Vegs(sus) | Ic = 200MA, Rpg = 30 |--| -- | Volts Sustain Voltage Collector-Emitter Open VocEro(sus) Io = 100mA, lb =0 20 | --} -- |Volts Base Sustain Voltage AC Current Gain | by, | Vog = 10Vdc, -- Io = 10mAdc, f=50MHz] 4.0 | --] -- Collector Output Cob Vop = 10Vde, I, = 0, pF Capacitance f = 100 kHz -~- |--]| 8 Power Input (PEP) (Note 1) Pin -- |--] 12 ] mw Power Gain Se P= 0.3 Watts PEP | 14/17) -- | a8 out . . Intermodulation In (0.15 W rms) 30 {32} -- | dB Distortion Ratio f = 30MHZV._ = 15. 0Vde __ Tar.) = 40mA Efficiency n C(max) 25 |] 30] -- % * Pulse= 100 wsec, Duty Cycle = 2% Note 1. PEP. Peak Envelope Power 9-59 RF Transistors 2N3295 (Continued) SAFE OPERATING AREA POWER OUTPUT versus FREQUENCY 0.4 0.2 x a 4 05S . PULSE WIDTH DUTY CYCLE alee aN N2ZN%, BX Ol 0.08 0.06 0.04 \c, PEAK COLLECTOR CURRENT (mA) Pout, POWER OUTPUT (WATTS - PEP} 0.02 Vee = 15 Ve i, DISTORTION <-30 4B 0.01 0 10 20 30 40 50 60 10 20 40 60 80 100 200 400 Veg, COLLECTOR - EMITTER VOLTAGE (VOLTS) {, FREQUENCY MHz} MAXIMUM POWER OUTPUT FOR GIVEN t,, DISTORTION LEVEL POWER OUTPUT versus OPTIMUM BIAS 05 Vee = 15 Vde f= 30 MHz |, DISTORTION Te = 25C 0.4 0.3 Pour POWER OUTPUT (WATTS - PEP} 0.2 Vee 15 Vdc f-- 30 MHz Pout. POWER OUTPUT (WATTS - PEP} 01 25 30 35 40 30 3.2 34 36 38 4.0 In INTERMODULATION DISTORTION (dB BELOW SIGNAL) Ic{opt), OPTIMUM NO SIGNAL COLLECTOR CURRENT {mAdcl OUTPUT CHARACTERISTICS versus POWER INPUT 30 MC 4Mc MINIMUM I, += 15 Vde Pout, POWER OUTPUT (WATTS - PEP) +1. COLLECTOR EFFICIENCY (%) Poxe POWER OUTPUT (WATTS - PEP) 1, COLLECTOR EFFICIENCY (%) 0 1 2 3 4 5 6 7 8 9 610 0 0.05 0.1 0.15 02 0.25 Pi, , POWER INPUT (mf PEP) P., POWER INPUT (mW PEP} 9-60